公开(公告)号：US11979971B2

公开(公告)日：2024-05-07

申请号：US16380423

申请日：2019-04-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yen-Shuo Su ,  Chun-Lin Chang ,  Han-Lung Chang ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  G03F7/00 ,  G03F7/20 ,  G21K1/06

CPC classification number: H05G2/005 ,  G03F7/70033 ,  G03F7/70175 ,  G03F7/70916 ,  G21K1/06 ,  H05G2/00 ,  H05G2/008

Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector mirror, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device, one or more coils for generating an inductively coupled plasma (ICP), a gas inlet for providing a source gas for the ICP, and a chamber enclosing at least the collector mirror and the rotatable debris collection device. The gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.

公开(公告)号：US11737200B2

公开(公告)日：2023-08-22

申请号：US17228157

申请日：2021-04-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis Chang ,  Jen-Hao Yeh ,  Han-Lung Chang ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  G21K1/06 ,  H01S3/13 ,  H01S3/104 ,  H01S3/23 ,  H01S3/11 ,  H01S3/223 ,  H01S3/134 ,  H01S3/10

CPC classification number: H05G2/008 ,  G21K1/062 ,  H01S3/104 ,  H01S3/1305 ,  H05G2/005 ,  H01S3/10038 ,  H01S3/10069 ,  H01S3/11 ,  H01S3/134 ,  H01S3/2232 ,  H01S3/2316 ,  H01S3/2333 ,  H01S3/2383

Abstract: A system includes a laser source operable to provide a laser beam, a laser amplifier having a gain medium operable to provide energy to the laser beam when the laser beam passes through the laser amplifier, and a residual gain monitor operable to provide a probe beam and operable to derive a residual gain of the laser amplifier from the probe beam when the probe beam passes through the laser amplifier while being offset from the laser beam in time or in path.

公开(公告)号：US11588293B2

公开(公告)日：2023-02-21

申请号：US16165022

申请日：2018-10-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis Chang ,  Henry Tong Yee-Shian ,  Alan Tu ,  Han-Lung Chang ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H01S3/10 ,  H01S3/23 ,  H01S3/04 ,  H01S3/11 ,  H01S3/223 ,  H01S3/041 ,  H01S3/00 ,  H05G2/00 ,  H01S3/104

Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.

公开(公告)号：US11528798B2

公开(公告)日：2022-12-13

申请号：US17338441

申请日：2021-06-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shih-Yu Tu ,  Han-Lung Chang ,  Hsiao-Lun Chang ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00

Abstract: A method includes ejecting a metal droplet from a reservoir of a first droplet generator assembled to a vessel; emitting an excitation laser from a laser source to the metal droplet to generate extreme ultraviolet (EUV) radiation; turning off the first droplet generator; cooling down the first droplet generator to a temperature not lower than about 150° C.; dismantling the first droplet generator from the vessel at the temperature not lower than about 150° C.; and assembling a second droplet generator to the vessel.

公开(公告)号：US11452197B2

公开(公告)日：2022-09-20

申请号：US16655116

申请日：2019-10-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yen-Shuo Su ,  Jen-Hao Yeh ,  Jhan-Hong Yeh ,  Ting-Ya Cheng ,  Yee-Shian Henry Tong ,  Chun-Lin Chang ,  Han-Lung Chang ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  G01V8/12

Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.

公开(公告)号：US11419203B2

公开(公告)日：2022-08-16

申请号：US17248785

申请日：2021-02-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis Chang ,  Jen-Hao Yeh ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  G03F7/00 ,  G03F7/20

Abstract: A method and system for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.

公开(公告)号：US20220221804A1

公开(公告)日：2022-07-14

申请号：US17712419

申请日：2022-04-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Chih Hsieh ,  Kai-Hsiung Chen ,  Po-Chung Cheng

IPC: G03F9/00 ,  H01L23/544 ,  G03F7/20

Abstract: Methods of fabricating and using an overlay mark are provided. In some embodiments, the overlay mark includes an upper layer and a lower layer disposed below the upper layer. The lower layer includes a first plurality of compound gratings extending in a first direction and disposed in a first region of the overlay mark, each of the first plurality of compound gratings including one first element and at least two second elements disposed on one side of the first element, and a second plurality of compound gratings extending the first direction and disposed in a second region of the overlay mark, each of the second plurality of compound gratings including one third element and at least two fourth elements on one side of the third element. The first plurality of compound gratings is a mirror image of the second plurality of compound gratings.

公开(公告)号：US11204556B2

公开(公告)日：2021-12-21

申请号：US16995759

申请日：2020-08-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Chih Huang ,  Chi Yang ,  Che-Chang Hsu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F7/20

Abstract: A method of controlling a feedback system with a data matching module of an extreme ultraviolet (EUV) radiation source is disclosed. The method includes obtaining a slit integrated energy (SLIE) sensor data and diffractive optical elements (DOE) data. The method performs a data match, by the data matching module, of a time difference of the SLIE sensor data and the DOE data to identify a mismatched set of the SLIE sensor data and the DOE data. The method also determines whether the time difference of the SLIE sensor data and the DOE data of the mismatched set is within an acceptable range. Based on the determination, the method automatically validates a configurable data of the mismatched set such that the SLIE sensor data of the mismatched set is valid for a reflectivity calculation.

公开(公告)号：US20210364907A1

公开(公告)日：2021-11-25

申请号：US17394005

申请日：2021-08-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Tsung Shih ,  Shih-Chang Shih ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F1/24 ,  G03F1/80 ,  G03F1/54 ,  G03F1/52

Abstract: A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). The lithography mask also includes a reflective structure disposed over the substrate. The reflective structure includes a first layer and a second layer disposed over the first layer. At least the second layer is porous. The mask is formed by forming a multilayer reflective structure over the LTEM substrate, including forming a plurality of repeating film pairs, where each film pair includes a first layer and a porous second layer. A capping layer is formed over the multilayer reflective structure. An absorber layer is formed over the capping layer.

公开(公告)号：US11092555B2

公开(公告)日：2021-08-17

申请号：US16933067

申请日：2020-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis Chang ,  Shang-Chieh Chien ,  Shang-Ying Wu ,  Li-Kai Cheng ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng ,  Anthony Yen ,  Chia-Chen Chen

IPC: G01N21/88 ,  G01N21/954 ,  G03F7/20 ,  H01L21/027 ,  G01N21/956 ,  G01N21/94

Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.