公开(公告)号：US09806184B2

公开(公告)日：2017-10-31

申请号：US15052911

申请日：2016-02-25

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/40 ,  H01L29/06 ,  H01L29/205 ,  H01L29/20

CPC classification number: H01L29/7787 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/404 ,  H01L29/405

Abstract: A semiconductor device including a low conducting field-controlling element is provided. The device can include a semiconductor including an active region (e.g., a channel), and a set of contacts to the active region. The field-controlling element can be coupled to one or more of the contacts in the set of contacts. The field-controlling element can be formed of a low conducting layer of material and have a lateral resistance that is both larger than an inverse of a minimal operating frequency of the device and smaller than an inverse of a maximum control frequency of the device.

公开(公告)号：US20170219854A1

公开(公告)日：2017-08-03

申请号：US15420429

申请日：2017-01-31

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur

IPC: G02F1/035 ,  G02F1/03

CPC classification number: G02F1/035 ,  G02F1/0316 ,  G02F2202/20

Abstract: An optical modulator is provided. The optical modulator can include a wave guide layer made of an electro-optical material with two or more electrodes directly contacting the wave guide layer. Each electrode can include an associated optical wave guide region, which is located within the wave guide layer. Each optical wave guide region is aligned with a lateral location corresponding to an electric field peak, which can be generated during operation of the optical modulator in a circuit, associated with the corresponding electrode. One or more voltage sources in a circuit can be operated to generate an electric field peak at one or more of the electrodes.

公开(公告)号：US09660038B2

公开(公告)日：2017-05-23

申请号：US15208309

申请日：2016-07-12

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Mikhail Gaevski ,  Michael Shur

IPC: H01L21/20 ,  H01L27/12 ,  H01L29/20 ,  H01L29/861 ,  H01L29/78 ,  H01L29/66 ,  H01L29/778 ,  H01L29/423 ,  H01L29/872 ,  H01L29/93 ,  H01L29/10 ,  H01L23/367 ,  H01L29/40 ,  H01L29/417 ,  H01L29/06

CPC classification number: H01L29/2003 ,  H01L23/367 ,  H01L29/0623 ,  H01L29/0657 ,  H01L29/1087 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/4232 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/6609 ,  H01L29/66446 ,  H01L29/66477 ,  H01L29/7786 ,  H01L29/78 ,  H01L29/7831 ,  H01L29/7838 ,  H01L29/861 ,  H01L29/8613 ,  H01L29/872 ,  H01L29/93 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A lateral semiconductor device and/or design including a space-charge generating layer and an electrode or a set of electrodes located on an opposite side of a device channel as contacts to the device channel is provided. The space-charge generating layer is configured to form a space-charge region to at least partially deplete the device channel in response to an operating voltage being applied to the contacts to the device channel.

公开(公告)号：US09391189B2

公开(公告)日：2016-07-12

申请号：US14885129

申请日：2015-10-16

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Mikhail Gaevski ,  Michael Shur ,  Remigijus Gaska

IPC: H01L21/20 ,  H01L27/12 ,  H01L29/78 ,  H01L29/861 ,  H01L29/66 ,  H01L29/778 ,  H01L29/872 ,  H01L29/93 ,  H01L29/10 ,  H01L23/367 ,  H01L29/40 ,  H01L29/417 ,  H01L29/06 ,  H01L29/20 ,  H01L29/423

CPC classification number: H01L29/78 ,  H01L23/367 ,  H01L29/0623 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/6609 ,  H01L29/66446 ,  H01L29/66477 ,  H01L29/7786 ,  H01L29/7831 ,  H01L29/7838 ,  H01L29/861 ,  H01L29/8613 ,  H01L29/872 ,  H01L29/93 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A lateral semiconductor device and/or design including a space-charge generating layer and a set of electrodes located on an opposite side of a device channel as contacts to the device channel is provided. The space-charge generating layer is configured to form a space-charge region to at least partially deplete the device channel in response to an operating voltage being applied to the contacts to the device channel.

Abstract translation: 提供了一种横向半导体器件和/或设计，其包括空间电荷产生层和位于器件沟道相对侧上的一组电极，作为与器件通道的接触。 空间电荷产生层被配置为响应于施加到器件通道的触点的工作电压而形成空间电荷区域以至少部分地耗尽器件沟道。

公开(公告)号：US20160111505A1

公开(公告)日：2016-04-21

申请号：US14979915

申请日：2015-12-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/40 ,  H01L29/778 ,  G06F17/50

CPC classification number: H01L29/408 ,  G06F17/5068 ,  G06F17/5072 ,  G06F2217/02 ,  G06F2217/78 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/7786 ,  H01L29/872

Abstract: A semiconductor device with a breakdown preventing layer is provided. The breakdown preventing layer can be located in a high-voltage surface region of the device. The breakdown preventing layer can include an insulating film or a low conductive film with conducting elements embedded therein. The conducting elements can be arranged along a lateral length of the insulating film or the low conductive film. The conducting elements can vary in at least one of composition, doping, conductivity, size, thickness, shape, and distance from the device channel along a lateral length of the insulating film or the low conductive film, or in a direction that is perpendicular to the lateral length.

Abstract translation: 提供具有防分解层的半导体器件。 防破坏层可以位于器件的高压表面区域中。 防破坏层可以包括绝缘膜或具有嵌入其中的导电元件的低导电膜。 导电元件可以沿着绝缘膜或低导电膜的横向长度布置。 导电元件可以沿着绝缘膜或低导电膜的横向长度，或者在垂直于绝缘膜的方向上的组成，掺杂，导电性，尺寸，厚度，形状和与器件沟道的距离中的至少一种， 横向长度。

公开(公告)号：US09190510B2

公开(公告)日：2015-11-17

申请号：US14040900

申请日：2013-09-30

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/66 ,  H01L29/78 ,  G06F17/50 ,  H01L29/778 ,  H01L29/872 ,  H01L29/40 ,  H01L29/20

CPC classification number: H01L29/408 ,  G06F17/5068 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/78 ,  H01L29/872

Abstract: A semiconductor device with a breakdown preventing layer is provided. The breakdown preventing layer can be located in a high-voltage surface region of the device. The breakdown preventing layer can include an insulating film with conducting elements embedded therein. The conducting elements can be arranged along a lateral length of the insulating film. The conducting elements can be configured to split a high electric field spike otherwise present in the high-voltage surface region during operation of the device into multiple much smaller spikes.

Abstract translation: 提供具有防分解层的半导体器件。 防破坏层可以位于器件的高压表面区域中。 防破坏层可以包括其中嵌入有导电元件的绝缘膜。 导电元件可以沿着绝缘膜的横向长度布置。 导电元件可以被配置为在设备操作期间将高电场尖峰分裂成另外存在于高电压表面区域中的多个更小的尖峰。

公开(公告)号：US20150021664A1

公开(公告)日：2015-01-22

申请号：US14333890

申请日：2014-07-17

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Mikhail Gaevski ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/778 ,  H01L29/205

CPC classification number: H01L29/7787 ,  H01L29/0653 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41766 ,  H01L29/7788

Abstract: A lateral/vertical device is provided. The device includes a device structure including a device channel having a lateral portion and a vertical portion. The lateral portion of the device channel can be located adjacent to a first surface of the device structure, and one or more contacts and/or a gate can be formed on the first surface. The device structure also includes a set of insulating layers located in the device structure between the lateral portion of the device channel and a second surface of the device structure opposite the first surface. An opening in the set of insulating layers defines a transition region between the lateral portion of the device channel and a vertical portion of the device channel. A contact to the vertical portion of the device channel can be located on the second surface.

Abstract translation: 提供横向/垂直装置。 该装置包括装置结构，其包括具有侧部和垂直部分的装置通道。 器件通道的横向部分可以位于器件结构的第一表面附近，并且可以在第一表面上形成一个或多个触点和/或栅极。 器件结构还包括一组位于器件结构的器件结构中的绝缘层，该绝缘层位于器件沟道的侧面部分和与第一表面相对的器件结构的第二表面之间。 该组绝缘层中的开口限定了器件沟道的横向部分与器件沟道的垂直部分之间的过渡区域。 与设备通道的垂直部分的接触可以位于第二表面上。

公开(公告)号：US20140291740A1

公开(公告)日：2014-10-02

申请号：US14225761

申请日：2014-03-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Mikhail Gaevski ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/10 ,  H01L29/78 ,  H03F3/217 ,  H01L29/66

CPC classification number: H03F3/2171 ,  H01L29/0603 ,  H01L29/0649 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/66462 ,  H01L29/7787 ,  H03F3/2176

Abstract: A device including a plurality of perforations to a semiconductor channel is provided. The device includes a semiconductor structure forming the semiconductor channel. Additionally, the device includes a source contact, a drain contact, and a gate contact to the semiconductor channel. The plurality of perforations can be located in the semiconductor structure below the gate contact. Furthermore, a perforation in the plurality of perforations can extend into the semiconductor structure beyond a location of the semiconductor channel.

Abstract translation: 提供了包括到半导体通道的多个穿孔的装置。 该器件包括形成半导体沟道的半导体结构。 此外，器件包括源极接触，漏极接触和到半导体通道的栅极接触。 多个穿孔可以位于门接触下方的半导体结构中。 此外，多个穿孔中的穿孔可以延伸到半导体结构中超过半导体通道的位置。

公开(公告)号：US20140091373A1

公开(公告)日：2014-04-03

申请号：US14040900

申请日：2013-09-30

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/78 ,  G06F17/50

CPC classification number: H01L29/408 ,  G06F17/5068 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/78 ,  H01L29/872

Abstract: A semiconductor device with a breakdown preventing layer is provided. The breakdown preventing layer can be located in a high-voltage surface region of the device. The breakdown preventing layer can include an insulating film with conducting elements embedded therein. The conducting elements can be arranged along a lateral length of the insulating film. The conducting elements can be configured to split a high electric field spike otherwise present in the high-voltage surface region during operation of the device into multiple much smaller spikes.

Abstract translation: 提供具有防分解层的半导体器件。 防破坏层可以位于器件的高压表面区域中。 防破坏层可以包括其中嵌入有导电元件的绝缘膜。 导电元件可以沿着绝缘膜的横向长度布置。 导电元件可以被配置为在设备操作期间将高电场尖峰分裂成另外存在于高电压表面区域中的多个更小的尖峰。

公开(公告)号：US20240379901A1

公开(公告)日：2024-11-14

申请号：US18782552

申请日：2024-07-24

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Grigory Simin ,  Alexander Dobrinsky

IPC: H01L33/06 ,  G06F30/30 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/18 ,  H01L33/00 ,  H01L33/08 ,  H01L33/12 ,  H01L33/30 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46 ,  H01L33/64 ,  H01S5/30 ,  H01S5/343

Abstract: An optoelectronic device configured for improved light extraction through a region of the device other than the substrate is described. A group III nitride semiconductor layer of a first polarity is located on the substrate and an active region can be located on the group III nitride semiconductor layer. A group III nitride semiconductor layer of a second polarity, different from the first polarity, can located adjacent to the active region. A first contact can directly contact the group III nitride semiconductor layer of the first polarity and a second contact can directly contact the group III nitride semiconductor layer of the second polarity. Each of the first and second contacts can include a plurality of openings extending entirely there through and the first and second contacts can form a photonic crystal structure. Some or all of the group III nitride semiconductor layers can be located in nanostructures.