公开(公告)号：US20230076900A1

公开(公告)日：2023-03-09

申请号：US18055565

申请日：2022-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun LEE ,  Minsu SEOL ,  Yeonchoo CHO ,  Hyeonjin SHIN

IPC: H01L29/10 ,  H01L21/02 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

Abstract: Provided is a semiconductor device which use a two-dimensional semiconductor material as a channel layer. The semiconductor device includes: a gate electrode on a substrate; a gate dielectric on the gate electrode; a channel layer on the gate dielectric; and a source electrode and a drain electrode that may be electrically connected to the channel layer. The gate dielectric has a shape with a height greater than a width, and the channel layer includes a two-dimensional semiconductor material.

公开(公告)号：US20220238721A1

公开(公告)日：2022-07-28

申请号：US17505955

申请日：2021-10-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Van Luan NGUYEN ,  Minsu SEOL ,  Eunkyu LEE ,  Junyoung KWON ,  Hyeonjin SHIN ,  Minseok YOO

IPC: H01L29/786

Abstract: A semiconductor device according to an embodiment may include a substrate, an adhesive layer, and a semiconductor layer. The semiconductor layer includes a 2D material having a layered structure. The adhesive layer is interposed between the substrate and the semiconductor layer, and has adhesiveness to a 2D material.

公开(公告)号：US20220238692A1

公开(公告)日：2022-07-28

申请号：US17546303

申请日：2021-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Van Luan NGUYEN ,  Minsu SEOL ,  Junyoung KWON ,  Hyeonjin SHIN ,  Minseok YOO ,  Yeonchoo CHO

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/304 ,  H01L21/463

Abstract: A method of patterning a 2D material layer is includes selectively forming a first material layer on a surface of a substrate to form a first region in which the first material layer covers the surface of the substrate and to further form a second region in which the surface of the substrate is exposed from the first material layer, the first material layer having a strong adhesive force with a 2D material. The method further includes forming a 2D material layer is formed in both the first region and the second region. The method further includes selectively removing the 2D material layer from the second region based on using a physical removal method, such that the 2D material layer remains in the first region.

公开(公告)号：US20210375977A1

公开(公告)日：2021-12-02

申请号：US17313464

申请日：2021-05-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun LEE ,  Minsu SEOL ,  Hyeonjin SHIN

IPC: H01L27/146 ,  H04N5/33

Abstract: An image sensor includes a visible light sensor portion and an infrared sensor portion arranged on the visible light sensor portion. The visible light sensor portion includes a first sensor layer and a first signal wiring layer, wherein a plurality of visible light sensing elements are arrayed in the first sensor layer and the first signal wiring layer is configured to process a signal output from the first sensor layer. The infrared sensor portion includes a second sensor layer in which a plurality of infrared sensing elements are arrayed, and a second signal wiring layer configured to process a signal output from the second sensor layer. The infrared sensor portion and the visible light sensor portion form a single monolithic structure which is effective in obtaining high resolution.

公开(公告)号：US20210226011A1

公开(公告)日：2021-07-22

申请号：US16928508

申请日：2020-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun LEE ,  Minsu SEOL ,  Yeonchoo CHO ,  Hyeonjin SHIN

IPC: H01L29/10 ,  H01L21/02 ,  H01L29/66 ,  H01L29/417 ,  H01L29/78 ,  H01L29/40 ,  H01L29/423

Abstract: Provided is a semiconductor device which use a two-dimensional semiconductor material as a channel layer. The semiconductor device includes: a gate electrode on a substrate; a gate dielectric on the gate electrode; a channel layer on the gate dielectric; and a source electrode and a drain electrode that may be electrically connected to the channel layer. The gate dielectric has a shape with a height greater than a width, and the channel layer includes a two-dimensional semiconductor material.

公开(公告)号：US20210083600A1

公开(公告)日：2021-03-18

申请号：US17097232

申请日：2020-11-13

Applicant: Samsung Electronics Co., Ltd. ,  UNITS (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Jae-Young KIM ,  Kyungeun BYUN ,  Minsu SEOL ,  Hyeonjin SHIN ,  Jeongmin BAIK ,  Jinsung CHUN ,  Byeonguk YE

IPC: H02N2/18 ,  H02N1/04

Abstract: A triboelectric generator includes first and second electrodes spaced apart from each other, a first charging object on a surface of the first electrode facing the second electrode, a second charging object provided between the first charging object and the second electrode, and a grounding unit configured to intermittently interconnect the second charging object and a charge reservoir due to motion of the second charging object. The first charging object is configured to be positively charged due to contact. The second charging object is configured to be negatively charged due to contact.

公开(公告)号：US20190035635A1

公开(公告)日：2019-01-31

申请号：US16036113

申请日：2018-07-16

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation SUNGKYUNKWAN UNIVERSITY

Inventor： Sangwon KIM ,  Changsik SONG ,  Dongcheol JEONG ,  Minsu SEOL ,  Hyeonjin SHIN ,  Dongwook LEE ,  Taewoo KIM ,  Juhyen LEE ,  Hyejin CHO

IPC: H01L21/308 ,  G03F7/004 ,  H01L21/311 ,  G03F7/16 ,  H01L29/16 ,  G03F7/027 ,  C07B37/12

Abstract: Provided are a hardmask composition, a method of forming a pattern using the hardmask composition, and a hardmask formed using the hardmask composition. The hardmask composition includes a polar nonaqueous organic solvent and one of: i) a mixture of graphene quantum dots and at least one selected from a diene and a dienophile, ii) a Diels-Alder reaction product of the graphene quantum dots and the at least one selected from a diene and a dienophile, iii) a thermal treatment product of the Diels-Alder reaction product of graphene quantum dots and the at least one selected from a diene and a dienophile, or iv) a combination thereof.

公开(公告)号：US20190019675A1

公开(公告)日：2019-01-17

申请号：US15874226

申请日：2018-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongwook LEE ,  Sangwon KIM ,  Minsu SEOL ,  Seongjun PARK ,  Hyeonjin SHIN ,  Yunseong LEE ,  Seongjun JEONG ,  Alum JUNG

IPC: H01L21/033 ,  H01L21/311 ,  C01B32/194

Abstract: Provided are a hardmask composition, a method of preparing the same, and a method of forming a patterned layer using the hardmask composition. The hardmask composition may include graphene quantum dots, a metal compound, and a solvent. The metal compound may be chemically bonded (e.g., covalently bonded) to the graphene quantum dots. The metal compound may include a metal oxide. The metal oxide may include at least one of zirconium (Zr) oxide, titanium (Ti) oxide, tungsten (W) oxide, or aluminum (Al) oxide. The graphene quantum dots may be bonded to the metal compound by an M-O—C bond or an M-C bond, where M is a metal element, O is oxygen, and C is carbon.

公开(公告)号：US20250126886A1

公开(公告)日：2025-04-17

申请号：US18917227

申请日：2024-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun BYUN ,  Minsu SEOL ,  Junyoung KWON ,  Huije RYU

IPC: H01L27/092 ,  H01L29/24 ,  H01L29/76 ,  H01L29/786

Abstract: Provided is a semiconductor device including a two-dimensional (2D) material. The semiconductor device may include a first channel including a first 2D material layer, a second channel apart from the first channel in a first direction and including a second 2D material layer, a common gate electrode between the first channel and the second channel, a first electrode and a second electrode apart from each other and respectively in contact with the first channel and the second channel, and a common electrode apart from the first electrode and the second electrode in a second direction intersecting the first direction and in contact with the first channel and the second channel. One of the first channel and the second channel may be an n-type channel and the other one may be a p-type channel.

公开(公告)号：US20250126885A1

公开(公告)日：2025-04-17

申请号：US18913192

申请日：2024-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Kyung-Eun BYUN ,  Changhyun KIM ,  Eunkyu LEE

IPC: H01L27/092 ,  H01L21/762 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes a dielectric wall provided in a direction perpendicular to a substrate, a first metal oxide field effect transistor (MOSFET) provided on one side surface of the dielectric wall, a second MOSFET provided above the first MOSFET in a direction perpendicular to the substrate, and a third MOSFET provided in parallel with the first MOSFET on the other side surface of the dielectric wall.