公开(公告)号：US10297596B2

公开(公告)日：2019-05-21

申请号：US15496507

申请日：2017-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Deepak Sharma ,  Hyun-jong Lee ,  Raheel Azmat ,  Chul-hong Park ,  Sang-jun Park

IPC: H01L27/088 ,  H01L27/02 ,  H01L23/528 ,  H01L27/092 ,  H01L29/66 ,  H01L21/8238

Abstract: Provided is an integrated circuit including at least one cell, the at least one cell includes first and second active regions spaced apart from each other, a dummy region disposed between the first and second active regions, at least one first active fin disposed in the first active region and extending in a first direction, at least one second active fin extending along the first direction over the entire length of the second active region, and an active gate line extending in a second direction that is substantially perpendicular to the first direction, wherein the active gate line vertically overlaps the first active region and the dummy region and does not vertically overlap the second active region.

公开(公告)号：US20170229456A1

公开(公告)日：2017-08-10

申请号：US15496507

申请日：2017-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Deepak SHARMA ,  Hyun-jong Lee ,  Raheel Azmat ,  Chul-hong Park ,  Sang-jun Park

IPC: H01L27/088 ,  H01L23/528 ,  H01L27/02

CPC classification number: H01L27/0886 ,  H01L21/823828 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/0924 ,  H01L29/6681

Abstract: Provided is an integrated circuit including at least one cell, the at least one cell includes first and second active regions spaced apart from each other, a dummy region disposed between the first and second active regions, at least one first active fin disposed in the first active region and extending in a first direction, at least one second active fin extending along the first direction over the entire length of the second active region, and an active gate line extending in a second direction that is substantially perpendicular to the first direction, wherein the active gate line vertically overlaps the first active region and the dummy region and does not vertically overlap the second active region.

公开(公告)号：US09659871B2

公开(公告)日：2017-05-23

申请号：US14505788

申请日：2014-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Raheel Azmat ,  Rwik Sengupta ,  Chulhong Park ,  Kwanyoung Chun

IPC: H01L27/24 ,  H01L23/538 ,  H01L27/118 ,  H03K19/173 ,  H01L27/02

CPC classification number: H01L27/11807 ,  H01L23/535 ,  H01L23/5384 ,  H01L27/0207 ,  H01L29/0649 ,  H01L2924/0002 ,  H03K19/1736 ,  H01L2924/00

Abstract: Provided is a semiconductor device including a substrate with a plurality of logic cells, transistors provided in the plurality of logic cells, contact plugs connected to electrodes of the transistors, first via plugs in contact with top surfaces of the contact plugs, and first wires in contact with top surfaces of the first via plugs. The first wires may include a common conductive line connected to the plurality of logic cells through the contact plugs, and all of the first wires may be shaped like a straight line extending parallel to a specific direction.