Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14505788Application Date: 2014-10-03
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Publication No.: US09659871B2Publication Date: 2017-05-23
- Inventor: Raheel Azmat , Rwik Sengupta , Chulhong Park , Kwanyoung Chun
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2013-0121012 20131011
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L23/538 ; H01L27/118 ; H03K19/173 ; H01L27/02

Abstract:
Provided is a semiconductor device including a substrate with a plurality of logic cells, transistors provided in the plurality of logic cells, contact plugs connected to electrodes of the transistors, first via plugs in contact with top surfaces of the contact plugs, and first wires in contact with top surfaces of the first via plugs. The first wires may include a common conductive line connected to the plurality of logic cells through the contact plugs, and all of the first wires may be shaped like a straight line extending parallel to a specific direction.
Public/Granted literature
- US20150102413A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-04-16
Information query
IPC分类: