知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

64 records (took 0.016 seconds)

    Device-like scatterometry overlay targets
    31.
    发明授权
    Device-like scatterometry overlay targets 有权
    类似设备的散点图重叠目标

    公开(公告)号：US08913237B2

    公开(公告)日：2014-12-16

    申请号：US13904318

    申请日：2013-05-29

    Applicant: KLA-Tencor Corporation

    Inventor： Vladimir Levinski ,  Daniel Kandel ,  Eran Amit

    IPC: G01B11/27 ,  H01L23/544 ,  G01N21/47 ,  G03F7/20 ,  G01N21/956

    CPC classification number: G01B11/272 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70633 ,  H01L23/544 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: In one embodiment, a semiconductor target for detecting overlay error between two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate is disclosed. The target comprises at least a plurality of a plurality of first grating structures having a course pitch that is resolvable by an inspection tool and a plurality of second grating structures positioned relative to the first grating structures. The second grating structures have a fine pitch that is smaller than the course pitch, and the first and second grating structures are both formed in two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate. The first and second gratings have feature dimensions that all comply with a predefined design rules specification.

    Abstract translation: 在一个实施例中，公开了一种半导体靶，用于检测衬底的两个或更多个连续层之间或在衬底的单层上的两个或更多个分开产生的图案之间的重叠误差。 目标包括至少多个多个第一光栅结构，其具有通过检查工具可分辨的光程间距和相对于第一光栅结构定位的多个第二光栅结构。 第二光栅结构具有小于光栅间距的细间距，并且第一和第二光栅结构均形成在衬底的两个或更多个连续层中，或者在衬底的单个层上的两个或更多个分开产生的图案之间 。 第一和第二光栅具有全部符合预定义的设计规则规范的特征尺寸。

    Apodization for Pupil Imaging Scatterometry
    32.
    发明申请
    Apodization for Pupil Imaging Scatterometry 有权
    瞳孔影像散斑测量法

    公开(公告)号：US20140146322A1

    公开(公告)日：2014-05-29

    申请号：US13936529

    申请日：2013-07-08

    Applicant: KLA-Tencor Corporation

    Inventor： Andrew V. Hill ,  Amnon Manassen ,  Barak Bringoltz ,  Ohad Bachar ,  Mark Ghinovker ,  Zeev Bomzon ,  Daniel Kandel

    IPC: G01N21/47 ,  G01N21/55

    CPC classification number: G02B27/58 ,  G01B11/00 ,  G01N21/47 ,  G01N21/55 ,  G01N2201/06113 ,  G01N2201/068 ,  G03F7/70625 ,  G03F7/70633

    Abstract: The disclosure is directed to various apodization schemes for pupil imaging scatterometry. In some embodiments, the system includes an apodizer disposed within a pupil plane of the illumination path. In some embodiments, the system further includes an illumination scanner configured to scan a surface of the sample with at least a portion of apodized illumination. In some embodiments, the system includes an apodized pupil configured to provide a quadrupole illumination function. In some embodiments, the system further includes an apodized collection field stop. The various embodiments described herein may be combined to achieve certain advantages.

    Abstract translation: 本公开涉及用于瞳孔成像散射测量的各种变迹方案。 在一些实施例中，该系统包括设置在照明路径的光瞳平面内的变迹器。 在一些实施例中，系统还包括照明扫描器，其构造成用至少一部分变迹照明来扫描样品的表面。 在一些实施例中，系统包括配置成提供四极照明功能的变迹瞳孔。 在一些实施例中，系统还包括变迹集合区域停止。 可以组合这里描述的各种实施例以实现某些优点。

    Method and System for Providing a Target Design Displaying High Sensitivity to Scanner Focus Change
    33.
    发明申请
    Method and System for Providing a Target Design Displaying High Sensitivity to Scanner Focus Change 有权
    提供目标设计的方法和系统，显示出对扫描仪焦点变化的高灵敏度

    公开(公告)号：US20140141536A1

    公开(公告)日：2014-05-22

    申请号：US14074412

    申请日：2013-11-07

    Applicant: KLA-Tencor Corporation

    Inventor： Vladimir Levinski ,  Yoel Feler ,  Daniel Kandel

    IPC: G06F17/50 ,  G03F7/20 ,  H01L21/66 ,  G03F1/38 ,  G01B11/14

    CPC classification number: G03F1/38 ,  G01B11/14 ,  G03F1/70 ,  G03F7/70641 ,  G03F7/70683

    Abstract: A segmented mask includes a set of cell structures, wherein each cell structure includes a set of features having an unresolvable segmentation pitch along a first direction, wherein the unresolvable segmentation pitch along the first direction is smaller than the illumination of the lithography printing tool, wherein the plurality of cell structures have a pitch along a second direction perpendicular to the first direction, wherein the unresolvable segmentation pitch is suitable for generating a printed pattern for shifting the best focus position of the lithography tool by a selected amount to achieve a selected level of focus sensitivity.

    Abstract translation: 分割的掩模包括一组单元结构，其中每个单元结构包括沿着第一方向具有不可解析的分割间距的一组特征，其中沿着第一方向的不可解析的分割间距小于光刻印刷工具的照明，其中 所述多个单元结构具有沿着垂直于所述第一方向的第二方向的间距，其中所述不可分辨的分割间距适于产生用于将所述光刻工具的最佳聚焦位置移动所选量的印刷图案，以实现所选择的等级 聚焦灵敏度。

    PHASE CHARACTERIZATION OF TARGETS
    34.
    发明申请
    PHASE CHARACTERIZATION OF TARGETS 有权
    目标相位特征

    公开(公告)号：US20140111791A1

    公开(公告)日：2014-04-24

    申请号：US14057827

    申请日：2013-10-18

    Applicant: KLA-Tencor Corporation

    Inventor： Amnon Manassen ,  Ohad Bachar ,  Daria Negri ,  Boris Golovanevsky ,  Barak Bringoltz ,  Daniel Kandel ,  Yoel Feler ,  Noam Sapiens ,  Paykin Irina ,  Alexander Svizher ,  Meir Aloni ,  Guy Ben Dov ,  Hadar Shalmoni ,  Vladimir Levinski

    IPC: G01B9/02

    CPC classification number: G01B9/0209 ,  G01B9/02027 ,  G01B9/02043 ,  G01B9/02087 ,  G01N21/45

    Abstract: Systems and methods are provided which derive target characteristics from interferometry images taken at multiple phase differences between target beams and reference beams yielding the interferometry images. The illumination of the target and the reference has a coherence length of less than 30 microns to enable scanning the phase through the coherence length of the illumination. The interferometry images are taken at the pupil plane and/or in the field plane to combine angular and spectroscopic scatterometry data that characterize and correct target topography and enhance the performance of metrology systems.

    Abstract translation: 提供了系统和方法，其从在目标光束和参考光束之间的多个相位差处拍摄的产生干涉测量图像的干涉测量图像中导出目标特征。 目标和参考物的照明具有小于30微米的相干长度，以使得能够通过照明的相干长度扫描相位。 在瞳孔平面和/或场平面中拍摄干涉测量图像，以组合表征和校正目标地形的角度和光谱散射数据，并增强计量系统的性能。

    Scanning in angle-resolved reflectometry and algorithmically eliminating diffraction from optical metrology
    35.
    发明授权
    Scanning in angle-resolved reflectometry and algorithmically eliminating diffraction from optical metrology 有权

    公开(公告)号：US10533940B2

    公开(公告)日：2020-01-14

    申请号：US16188218

    申请日：2018-11-12

    Applicant: KLA-Tencor Corporation

    Inventor： Amnon Manassen ,  Andrew V. Hill ,  Daniel Kandel ,  Ilan Sela ,  Ohad Bachar ,  Barak Bringoltz

    IPC: G01N21/55 ,  G01N21/95 ,  G01N21/956 ,  G01B11/00

    Abstract: Angle-resolved reflectometers and reflectometry methods are provided, which comprise a coherent light source, an optical system arranged to scan a test pattern using a spot of coherent light from the light source to yield realizations of the light distribution in the collected pupil, wherein the spot covers a part of the test pattern and the scanning is carried out optically or mechanically according to a scanning pattern, and a processing unit arranged to generate a composite image of the collected pupil distribution by combining the pupil images. Metrology systems and methods are provided, which reduce diffraction errors by estimating, quantitatively, a functional dependency of measurement parameters on aperture sizes and deriving, from identified diffraction components of the functional dependency which relate to the aperture sizes, correction terms for the measurement parameters with respect to the measurement conditions.

    Reflection symmetric scatterometry overlay targets and methods
    37.
    发明授权
    Reflection symmetric scatterometry overlay targets and methods 有权

    公开(公告)号：US10234280B2

    公开(公告)日：2019-03-19

    申请号：US14687074

    申请日：2015-04-15

    Applicant: KLA-Tencor Corporation

    Inventor： Barak Bringoltz ,  Daniel Kandel

    IPC: G01B11/27 ,  G03F7/20

    Abstract: A method for target measurement is provided which comprises designing a reflection-symmetric target and measuring overlays of the target along at least one reflection symmetry direction of the target. Also, a tool calibration method comprising calibrating a scatterometry measurement tool with respect to a reflection symmetry of a reflection symmetric target. Further provided are methods of measuring scatterometry overlay using first order and zeroth order scatterometry measurements of a reflection-symmetric scatterometry targets. Also, a scatterometry target comprising a reflection-symmetric target having two cells in each of at least two measurement directions, wherein respective cells have different offsets along one measurement direction and similar offsets along other measurement directions. Further, a scatterometry measurement system comprising a reflection symmetric illumination and calibrated to measure reflection symmetric targets. Also, metrology tool comprising an illumination path and a collection path of the tool which are symmetric to reflection symmetries of a target.

Patent Agency Ranking