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公开(公告)号：US09875946B2
公开(公告)日：2018-01-23
申请号：US14252323
申请日：2014-04-14
Applicant: KLA-Tencor Corporation
Inventor： Andrei V. Shchegrov , Jonathan M. Madsen , Stilian Ivanov Pandev , Ady Levy , Daniel Kandel , Michael E. Adel , Ori Tadmor
IPC: H01L21/66
CPC classification number: H01L22/12 , H01L22/20 , H01L22/30 , H01L2924/0002 , H01L2924/00
Abstract: Methods and systems for performing semiconductor metrology directly on device structures are presented. A measurement model is created based on measured training data collected from at least one device structure. The trained measurement model is used to calculate process parameter values, structure parameter values, or both, directly from measurement data collected from device structures of other wafers. In some examples, measurement data from multiple targets is collected for model building, training, and measurement. In some examples, the use of measurement data associated with multiple targets eliminates, or significantly reduces, the effect of under layers in the measurement result, and enables more accurate measurements. Measurement data collected for model building, training, and measurement may be derived from measurements performed by a combination of multiple, different measurement techniques.
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公开(公告)号：US09710728B2
公开(公告)日：2017-07-18
申请号：US14924308
申请日：2015-10-27
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev , Siddharth Srivastava
CPC classification number: G06K9/6256 , G03F7/70633 , G06K9/2018 , G06K9/4604 , G06K9/6247 , G06K9/629 , G06T7/0004 , G06T2207/20081 , G06T2207/30148
Abstract: Methods and systems for measuring overlay error between structures formed on a substrate by successive lithographic processes are presented herein. Two overlay targets, each having programmed offsets in opposite directions are employed to perform an overlay measurement. Overlay error is measured based on zero order scatterometry signals and scatterometry data is collected from each target at two different azimuth angles. In addition, methods and systems for creating an image-based measurement model based on measured, image-based training data are presented. The trained, image-based measurement model is then used to calculate values of one or more parameters of interest directly from measured image data collected from other wafers. The methods and systems for image based measurement described herein are applicable to both metrology and inspection applications.
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公开(公告)号：US20170076440A1
公开(公告)日：2017-03-16
申请号：US15342432
申请日：2016-11-03
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev , Alexander Kuznetsov , Gregory R. Brady , Andrei V. Shchengrov , Noam Sapiens , John J. Hench
CPC classification number: G06T7/0004 , G01B2210/56 , G01N21/211 , G01N21/255 , G01N21/84 , G01N21/8422 , G01N2201/06113 , G03F7/70625 , G03F7/70633 , G06T7/60 , G06T2207/10004 , G06T2207/30148
Abstract: Disclosed are apparatus and methods for determining a structure or process parameter value of a target of interest on a semiconductor wafer. A plurality of collection patterns are defined for a spatial light beam controller positioned at a pupil image plane of a metrology tool. For each collection pattern, a signal is collected from a sensor of the metrology tool, and each collected signal represents a combination of a plurality of signals that the spatial light beam controller samples, using each collection pattern, from a pupil image of the target of interest. The collection patterns are selected so that the pupil image is reconstructable based on the collection patterns and their corresponding collection signals. The collected signal for each of the collection patterns is analyzed to determine a structure or process parameter value for the target of interest.
Abstract translation: 公开了用于确定半导体晶片上的感兴趣的目标的结构或过程参数值的装置和方法。 为位于计量工具的光瞳像平面处的空间光束控制器定义了多个收集图案。 对于每个收集图案，从计量工具的传感器收集信号，并且每个收集的信号表示多个信号的组合，空间光束控制器使用每个收集模式从目标的瞳孔图像 利益。 选择收集图案，使得基于收集图案及其对应的收集信号可以重建瞳孔图像。 分析每个收集模式的收集信号，以确定感兴趣的目标的结构或过程参数值。
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公开(公告)号：US20160282105A1
公开(公告)日：2016-09-29
申请号：US15076530
申请日：2016-03-21
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev
IPC: G01B11/06
CPC classification number: G01B11/0616 , G01B11/24 , G01B2210/56 , H01L22/12
Abstract: Methods and systems for building and using a parameter isolation model to isolate measurement signal information associated with a parameter of interest from measurement signal information associated with incidental model parameters are presented herein. The parameter isolation model is trained by mapping measurement signals associated with a first set of instances of a metrology target having known values of a plurality of incidental model parameters and known values of a parameter of interest to measurement signals associated with a second set of instances of the metrology target having nominal values of the plurality of incidental model parameters and the known values of the parameter of interest. The trained parameter isolation model receives raw measurement signals and isolates measurement signal information associated with a specific parameter of interest for model-based parameter estimation. The number of floating parameters of the measurement model is reduced, resulting in a significant reduction of computational effort.
Abstract translation: 本文介绍了构建和使用参数隔离模型来隔离与感兴趣的参数相关联的测量信号信息的测量信号信息与附带模型参数相关联的方法和系统。 参数隔离模型通过将与具有多个附带模型参数的已知值和感兴趣参数的已知值的测量目标的第一组实例相关联的测量信号映射到与第二组实例相关联的测量信号 测量目标具有多个附带模型参数的标称值和感兴趣的参数的已知值。 经过训练的参数隔离模型接收原始测量信号，并将与特定参数相关联的测量信号信息与基于模型的参数估计相隔离。 测量模型的浮动参数数量减少，从而显着降低了计算量。
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公开(公告)号：US09383661B2
公开(公告)日：2016-07-05
申请号：US14451320
申请日：2014-08-04
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev
CPC classification number: G03F9/7026 , G03F7/70641
Abstract: Disclosed are apparatus and methods for determining optimal focus for a photolithography system. A plurality of optical signals are acquired from a particular target located in a plurality of fields on a semiconductor wafer, and the fields were formed using different process parameters, including different focus values. A feature is extracted from the optical signals related to changes in focus. A symmetric curve is fitted to the extracted feature of the optical signals as a function of focus. An extreme point in the symmetric curve is determined and reported as an optimal focus for use in the photolithography system.
Abstract translation: 公开了用于确定光刻系统的最佳焦点的装置和方法。 从位于半导体晶片上的多个场中的特定目标获取多个光信号，并且使用包括不同聚焦值的不同工艺参数形成场。 从与焦点变化相关的光信号中提取特征。 对称曲线适合于作为焦点的函数的光信号的提取特征。 确定对称曲线中的极值点并将其报告为用于光刻系统的最佳焦点。
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Patent Agency Ranking
36.发明申请Signal Response Metrology For Image Based And Scatterometry Overlay Measurements 审中-公开信号响应测量用于基于图像和散射测量的叠加测量公开(公告)号：US20160117847A1
公开(公告)日：2016-04-28
申请号：US14880077
申请日：2015-10-09
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev , Dzmitry Sanko , Wei Lu , Siddharth Srivastava
CPC classification number: G06T7/001 , G01N21/956 , G03F7/70633 , G06T7/33 , G06T2207/10056 , G06T2207/20081 , G06T2207/30148 , H04N5/2256
Abstract: Methods and systems for measuring overlay error between structures formed on a substrate by successive lithographic processes are presented herein. Two overlay targets, each having programmed offsets in opposite directions are employed to perform an overlay measurement. Overlay error is measured based on zero order scatterometry signals and scatterometry data is collected from each target at two different azimuth angles. In addition, methods and systems for creating an image-based measurement model based on measured, image-based training data are presented. The trained, image-based measurement model is then used to calculate values of one or more parameters of interest directly from measured image data collected from other wafers. The methods and systems for image based measurement described herein are applicable to both metrology and inspection applications.
Abstract translation: 本文介绍了通过连续光刻过程测量在基底上形成的结构之间的重叠误差的方法和系统。 采用两个覆盖目标，每个具有相反方向的编程偏移量来执行覆盖测量。 覆盖误差是基于零阶散射测量信号测量的，并且从两个不同方位角的每个目标采集散射测量数据。 另外，提出了基于测量的基于图像的训练数据创建基于图像的测量模型的方法和系统。 然后使用经过训练的基于图像的测量模型来从其他晶片收集的测量图像数据直接计算一个或多个感兴趣的参数的值。 本文描述的基于图像的测量的方法和系统适用于计量和检验应用。
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公开(公告)号：US20160003609A1
公开(公告)日：2016-01-07
申请号：US14790793
申请日：2015-07-02
Applicant: KLA-Tencor Corporation
CPC classification number: G03F7/7065 , G03F7/705 , H01L22/12
Abstract: Methods and systems for estimating values of parameters of interest of actual device structures based on optical measurements of nearby metrology targets are presented herein. High throughput, inline metrology techniques are employed to measure metrology targets located near actual device structures. Measurement data collected from the metrology targets is provided to a trained signal response metrology (SRM) model. The trained SRM model estimates the value of one or more parameters of interest of the actual device structure based on the measurements of the metrology target. The SRM model is trained to establish a functional relationship between actual device parameters measured by a reference metrology system and corresponding optical measurements of at least one nearby metrology target. In a further aspect, the trained SRM is employed to determine corrections of process parameters to bring measured device parameter values within specification.
Abstract translation: 本文介绍了基于邻近度量目标的光学测量来估计实际设备结构感兴趣参数值的方法和系统。 采用高吞吐量的在线测量技术来测量位于实际设备结构附近的测量目标。 从测量目标收集的测量数据提供给训练有素的信号响应计量（SRM）模型。 经过训练的SRM模型基于测量目标的测量值来估计实际设备结构的一个或多个感兴趣的参数的值。 训练SRM模型以建立由参考测量系统测量的实际设备参数与至少一个附近度量目标的对应光学测量之间的功能关系。 在另一方面，采用经过训练的SRM来确定过程参数的校正，以将测量的设备参数值置于规定范围内。
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公开(公告)号：US20150235108A1
公开(公告)日：2015-08-20
申请号：US14624485
申请日：2015-02-17
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev
CPC classification number: G06K9/6255 , G01N21/9501 , G06K2209/19 , G06T7/0004 , G06T2207/20081 , G06T2207/30148
Abstract: Methods and systems for creating an image-based measurement model based only on measured, image-based training data are presented. The trained, image-based measurement model is then used to calculate values of one or more parameters of interest directly from measured image data collected from other wafers. The image-based measurement models receive image data directly as input and provide values of parameters of interest as output. In some embodiments, the image-based measurement model enables the direct measurement of overlay error. In some embodiments, overlay error is determined from images of on-device structures. In some other embodiments, overlay error is determined from images of specialized target structures. In some embodiments, image data from multiple targets, image data collected by multiple metrologies, or both, is used for model building, training, and measurement. In some embodiments, an optimization algorithm automates the image-based measurement model building and training process.
Abstract translation: 提出了仅基于测量的基于图像的训练数据创建基于图像的测量模型的方法和系统。 然后使用经过训练的基于图像的测量模型来从其他晶片收集的测量图像数据直接计算一个或多个感兴趣的参数的值。 基于图像的测量模型直接接收图像数据作为输入，并提供感兴趣参数的值作为输出。 在一些实施例中，基于图像的测量模型能够直接测量重叠误差。 在一些实施例中，覆盖误差由设备上结构的图像确定。 在一些其他实施例中，从专门的目标结构的图像确定覆盖误差。 在一些实施例中，来自多个目标的图像数据，由多个计量学收集的图像数据或两者都用于建模，训练和测量。 在一些实施例中，优化算法使基于图像的测量模型构建和训练过程自动化。
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公开(公告)号：US20140347666A1
公开(公告)日：2014-11-27
申请号：US14278224
申请日：2014-05-15
Applicant: KLA-Tencor Corporation
Inventor： Andrei Veldman , Andrei V. Shchegrov , Gregory Brady , Thaddeus Gerard Dziura , Stilian Ivanov Pandev , Alexander Kuznetsov
CPC classification number: G01N21/211 , G01B11/0625 , G01B11/0641 , G01B2210/56 , G01N21/9501 , G01N2021/213
Abstract: Methods and systems for evaluating the capability of a measurement system to track measurement parameters through a given process window are presented herein. Performance evaluations include random perturbations, systematic perturbations, or both to effectively characterize the impact of model errors, metrology system imperfections, and calibration errors, among others. In some examples, metrology target parameters are predetermined as part of a Design of Experiments (DOE). Estimated values of the metrology target parameters are compared to the known DOE parameter values to determine the tracking capability of the particular measurement. In some examples, the measurement model is parameterized by principal components to reduce the number of degrees of freedom of the measurement model. In addition, exemplary methods and systems for optimizing the measurement capability of semiconductor metrology systems for metrology applications subject to process variations are presented.
Abstract translation: 本文介绍了用于评估测量系统通过给定过程窗口跟踪测量参数的能力的方法和系统。 性能评估包括随机扰动，系统扰动或两者，以有效表征模型误差，计量系统缺陷和校准误差等的影响。 在一些示例中，度量目标参数被预先确定为实验设计（DOE）的一部分。 将度量目标参数的估计值与已知的DOE参数值进行比较，以确定特定测量的跟踪能力。 在一些示例中，测量模型由主要组件参数化，以减少测量模型的自由度数。 此外，提出了用于优化用于受过程变化的度量应用的半导体测量系统的测量能力的示例性方法和系统。
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公开(公告)号：US10732516B2
公开(公告)日：2020-08-04
申请号：US15861938
申请日：2018-01-04
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev , Andrei V. Shchegrov , Wei Lu
Abstract: Methods and systems for robust overlay error measurement based on a trained measurement model are described herein. The measurement model is trained from raw scatterometry data collected from Design of Experiments (DOE) wafers by a scatterometry based overlay metrology system. Each measurement site includes one or more metrology targets fabricated with programmed overlay variations and known process variations. Each measurement site is measured with known metrology system variations. In this manner, the measurement model is trained to separate actual overlay from process variations and metrology system variations which affect the overlay measurement. As a result, an estimate of actual overlay by the trained measurement model is robust to process variations and metrology system variations. The measurement model is trained based on scatterometry data collected from the same metrology system used to perform measurements. Thus, the measurement model is not sensitive to systematic errors, aysmmetries, etc.
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