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134 条记录 (耗时 0.037 秒)

    ADDITIVE MANUFACTURING FOR INTEGRATED CIRCUIT ASSEMBLY CABLES
    32.
    发明申请
    ADDITIVE MANUFACTURING FOR INTEGRATED CIRCUIT ASSEMBLY CABLES 有权

    公开(公告)号：US20210400856A1

    公开(公告)日：2021-12-23

    申请号：US16909269

    申请日：2020-06-23

    申请人： Intel Corporation

    发明人： Georgios Dogiamis ,  Adel Elsherbini ,  Feras Eid

    IPC分类号： H05K9/00 ,  H01B7/00 ,  H01B7/18 ,  H01R12/53

    摘要： Cables, cable connectors, and support structures for cantilever package and/or cable attachment may be fabricated using additive processes, such as a coldspray technique, for integrated circuit assemblies. In one embodiment, cable connectors may be additively fabricated directly on an electronic substrate. In another embodiment, seam lines of cables and/or between cables and cable connectors may be additively fused. In a further embodiment, integrated circuit assembly attachment and/or cable attachment support structures may be additively formed on an integrated circuit assembly.

    PHYSICALLY UNCLONABLE FUNCTION CIRCUITRY OF A PACKAGE SUBSTRATE AND METHOD OF PROVIDING SAME
    33.
    发明申请
    PHYSICALLY UNCLONABLE FUNCTION CIRCUITRY OF A PACKAGE SUBSTRATE AND METHOD OF PROVIDING SAME 有权

    公开(公告)号：US20210398909A1

    公开(公告)日：2021-12-23

    申请号：US16905202

    申请日：2020-06-18

    申请人： Intel Corporation

    发明人： Georgios Dogiamis ,  Feras Eid ,  Adel Elsherbini ,  David Johnston ,  Jyothi Bhaskarr Velamala ,  Rachael Parker

    IPC分类号： H01L23/544 ,  H01L23/00 ,  H01L23/498 ,  H04L9/32

    摘要： Techniques and mechanisms for providing physically unclonable function (PUF) circuitry at a substrate which supports coupling to an integrated circuit (IC) chip. In an embodiment, the substrate comprises an array of electrodes which extend in a level of metallization at a side of the insulator layer. A cap layer, disposed on the array, is in contact with the electrodes and with a portion of the insulator layer which is between the electrodes. A material of the cap layer has a different composition or microstructure than the metallization. Regions of the cap layer variously provide respective impedances each between a corresponding two electrodes. In other embodiments, the substrate includes (or couples to) integrated circuitry that is operable to determine security information based on the detection of one or more such impedances.

    Multiplexer and combiner structures embedded in a mmwave connector interface
    37.
    发明授权
    Multiplexer and combiner structures embedded in a mmwave connector interface 有权

    公开(公告)号：US10992016B2

    公开(公告)日：2021-04-27

    申请号：US16466629

    申请日：2017-01-05

    申请人： Intel Corporation

    发明人： Telesphor Kamgaing ,  Sasha Oster ,  Georgios Dogiamis ,  Johanna Swan

    IPC分类号： H01P5/08 ,  H01P1/207 ,  H01P3/12

    摘要： Embodiments of the invention include a mm-wave waveguide connector and methods of forming such devices. In an embodiment the mm-wave waveguide connector may include a plurality of mm-wave launcher portions, and a plurality of ridge based mm-wave filter portions each communicatively coupled to one of the mm-wave launcher portions. In an embodiment, the ridge based mm-wave filter portions each include a plurality of protrusions that define one or more resonant cavities. Additional embodiments may include a multiplexer portion communicatively coupled to the plurality of ridge based mm-wave filter portions and communicative coupled to a mm-wave waveguide bundle. In an embodiment the plurality of protrusions define resonant cavities with openings between 0.5 mm and 2.0 mm, the plurality of protrusions are spaced apart from each other by a spacing between 0.5 mm and 2.0 mm, and wherein the plurality of protrusions have a thickness between 200 μm and 1,000 μm.