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31.发明申请公开(公告)号：US20210335848A1
公开(公告)日：2021-10-28
申请号：US16484414
申请日：2018-10-12
Inventor： Yang Zhang , Tongshang Su , Bin Zhou , Wei Li , Wei Song , Jun Liu
IPC: H01L27/12
Abstract: A substrate for an electronic device includes an insulating layer; a via extending into the insulating layer; a light shielding layer in the via; and a thin film transistor comprising an active layer on the light shielding layer and in the via. The light shielding layer is configured to shield light from irradiating on the active layer.
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公开(公告)号：US20210335604A1
公开(公告)日：2021-10-28
申请号：US16487552
申请日：2019-02-20
Inventor： Yuankui Ding , Heekyu Kim , Liangchen Yan , Ce Zhao , Bin Zhou , Yingbin Hu , Wei Song , Dongfang Wang
Abstract: A method of fabricating a display substrate is provided. The method includes forming a conductive layer on a base substrate; and performing a chemical vapor deposition process to form an oxide layer on a side of an exposed surface of the conductive layer away from the base substrate, the exposed surface of the conductive layer including copper, the oxide layer formed to include an oxide of a target element M. The chemical vapor deposition process is performed using a mixture of a first reaction gas including oxygen and a second reaction gas including the target element M, at a reaction temperature in a range of 200 Celsius degrees to 280 Celsius degrees. A mole ratio of oxygen element to the target element M in the mixture of the first reaction gas and the second reaction gas is in a range of 40:1 to 60:1.
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公开(公告)号：US11114469B2
公开(公告)日：2021-09-07
申请号：US16396726
申请日：2019-04-28
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Bin Zhou , Binbin Cao , Liangchen Yan , Dongfang Wang , Ce Zhao , Luke Ding , Jun Liu
IPC: H01L27/12
Abstract: The present disclosure is in the field of display technologies, and provides an array substrate including an IGZO film layer, a gate layer, and a gate insulating layer. The gate layer is provided with broken lines at a position thereof overlapping the IGZO film layer to form a first gate line and a second gate line. The gate insulating layer is disposed between the IGZO film layer and the gate layer, and is provided with at least two through holes thereon, in which the first gate line is connected with the IGZO film layer through one of the through holes, and the second gate line is connected with the IGZO film layer through another through hole, thus, connecting the IGZO film layer in series into the gate layer.
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公开(公告)号：US11069758B2
公开(公告)日：2021-07-20
申请号：US16436201
申请日：2019-06-10
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Dongfang Wang , Bin Zhou , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
Abstract: The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.
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公开(公告)号：US11069725B2
公开(公告)日：2021-07-20
申请号：US16399508
申请日：2019-04-30
IPC: H01L27/12 , H01L21/311 , H01L21/3213
Abstract: A display substrate and a method of preparing the same, and a display device are provided, the method including: providing a substrate; forming a switching thin film transistor precursor and a driving thin film transistor precursor on the substrate, each including a semiconductor layer, a gate insulating material layer and a gate metallic layer stacked sequentially above the substrate; forming a photoresist layer above the switching thin film transistor precursor and the driving thin film transistor precursor, and forming an etching mask from the photoresist layer, a first portion of the etching mask at the switching thin film transistor precursor and a second portion of the etching mask at the driving thin film transistor precursor having different shapes; and forming a switching thin film transistor and a driving thin film transistor, by etching processing the switching thin film transistor precursor and the driving thin film transistor precursor with the etching mask.
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Patent Agency Ranking
公开(公告)号：US11049917B2
公开(公告)日：2021-06-29
申请号：US16494359
申请日：2019-03-18
Inventor： Na Zhao , Liyun Deng , Bin Zhou
Abstract: This disclosure relates to the field of display technologies, and discloses an OLED display panel, a method for fabricating the same, and a display device, and the OLED display device includes: a first substrate; a pixel definition layer located on the first substrate, and including a plurality of hollow light-emitting areas, and first recessed sections located between adjacent light-emitting areas; a cathode layer located on a side of the pixel definition layer away from the first substrate, and comprising corresponding second recessed sections corresponding in position to the first recessed sections; and electrically conductive sections located on a side of the cathode layer away from the pixel definition layer, and located in the second recessed sections.
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公开(公告)号：US20210124226A1
公开(公告)日：2021-04-29
申请号：US16964278
申请日：2019-12-13
Inventor： Leilei Cheng , Jingang Fang , Luke Ding , Jun Liu , Wei Li , Bin Zhou
IPC: G02F1/1362 , H01L21/768 , H01L23/532 , H01L27/12
Abstract: A method of manufacturing an array substrate is provided, which comprises: forming a first metal layer and an insulating layer in sequence on a base substrate, the insulating layer covering the first metal layer; forming an etch barrier layer on the insulating layer; etching the etching barrier layer and the insulating layer multiple times, wherein an effective blocking area of the etching barrier layer decreases successively in each etching to form a connection hole penetrating the insulating layer, the connection hole includes a plurality of via holes connected in sequence, and a slope angle of a hole wall of each via hole is smaller than a preset slope angle; and forming a second metal layer, the second metal layer being connected to the first metal layer through the connection hole.
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公开(公告)号：US10431639B2
公开(公告)日：2019-10-01
申请号：US15743082
申请日：2017-06-29
Inventor： Leilei Cheng , Bin Zhou
Abstract: A display substrate, a manufacturing method thereof, and a display device are provided, and the manufacturing method includes: providing a base substrate; forming a pixel definition layer on the base substrate; oxidizing the pixel definition layer, in which a surface of the pixel definition layer distal to the base substrate is partially oxidized, such that the pixel definition layer includes a main layer proximal to the base substrate and an oxide layer distal to the base substrate; curing and molding the pixel definition layer, and patterning the pixel definition layer to form a pixel definition layer pattern.
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公开(公告)号：US20190221588A1
公开(公告)日：2019-07-18
申请号：US15580240
申请日：2017-06-23
Inventor： Tongshang Su , Jun Cheng , Ce Zhao , Bin Zhou , Dongfang Wang , Guangcai Yuan
IPC: H01L27/12 , G09G3/3283 , G09G3/3291 , G02F1/133
Abstract: The present disclosure relates to an array substrate and a method for manufacturing the same. The array substrate includes a thin film transistor and comprises at least a first region and a second region. A thickness of an active layer of the thin film transistor in the first region is different from that of an active layer of the thin film transistor in the second region. A ratio of the overlapped area between the source electrode or the drain electrode and the active layer of the thin film transistor to the thickness of the active layer is kept uniform over the first region and the second region.
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公开(公告)号：US20190157432A1
公开(公告)日：2019-05-23
申请号：US15983055
申请日：2018-05-17
Inventor： Jun Liu , Luke Ding , Jiangang Fang , Bin Zhou , Leilei Cheng , Wei Li
IPC: H01L29/66 , H01L29/786 , H01L21/44 , H01L21/4763 , H01L21/4757 , H01L21/475 , H01L29/40
Abstract: A manufacturing method of a display substrate, a display substrate, and a display device are disclosed. The manufacturing method includes: forming an active layer; forming a gate insulation film layer, a gate film layer and a photoresist film layer; exposing the photoresist film layer to a light and developing the exposed photoresist film layer until the developed photoresist film layer has a thickness of 1.8-2.2 μm and a slope angle not less than 70°; over-etching the gate film layer to form a gate electrode, an orthographic projection of the gate electrode being located within a region of an orthographic projection of the developed photoresist film layer; over-etching the gate insulation film layer by a gaseous corrosion method to form a gate insulation layer; peeling off the photoresist film layer remaining on a surface of the gate electrode; and performing a conductive treatment to the active layer.
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