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公开(公告)号：US09831063B2
公开(公告)日：2017-11-28
申请号：US14768758
申请日：2014-03-03
Applicant: Entegris, Inc.
Inventor： Oleg Byl , Joseph D. Sweeney , Ying Tang , Richard S. Ray
IPC: H01J37/00 , H01J37/317 , H01J37/08 , H01L21/22 , C23C14/48
CPC classification number: H01J37/3171 , C23C14/48 , H01J37/08 , H01J2237/006 , H01J2237/08 , H01L21/2225
Abstract: Ion implantation compositions, systems and methods are described, for implantation of dopant species. Specific selenium dopant source compositions are described, as well as the use of co-flow gases to achieve advantages in implant system characteristics such as recipe transition, beam stability, source life, beam uniformity, beam current, and cost of ownership.
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公开(公告)号：US20160172164A1
公开(公告)日：2016-06-16
申请号：US14906537
申请日：2014-07-21
Applicant: Entegris, Inc.
Inventor： Joseph D. Sweeney , Edward E. Jones , Oleg Byl , Ying Tang , Joseph R. Despres , Steven E. Bishop
IPC: H01J37/32
CPC classification number: H01J37/32449 , H01J37/3171 , H01J2237/002 , H01J2237/006 , H01J2237/08 , H01J2237/24564 , H01J2237/3365
Abstract: Fluid storage and dispensing systems and methods for remote delivery of fluids are described, for providing fluid from a source vessel at lower voltage to one or more fluid-utilizing tools at higher voltage, so that the fluid crosses the associated voltage gap without arcing, discharge, premature ionization, or other anomalous behavior, and so that when multiple fluid-utilizing tools are supplied by the remote source vessel, fluid is efficiently supplied to each of the multiple tools at suitable pressure level during the independent operation of others of the multiple vessels.
Abstract translation: 描述用于远程输送流体的流体存储和分配系统和方法，用于将来自较低电压的源容器的流体提供给在较高电压下的一个或多个流体利用工具，使得流体跨过相关联的电压间隙而没有电弧，放电 过早电离或其他异常行为，并且当多个流体利用工具由远程源容器供应时，在多个容器的其他人的独立操作期间，以适当的压力水平将流体有效地供给到多个工具中的每一个 。
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33.发明授权Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system 有权用于在离子注入系统中增加离子源的寿命和性能的方法和装置公开(公告)号：US09012874B2
公开(公告)日：2015-04-21
申请号：US14338132
申请日：2014-07-22
Applicant: Entegris, Inc.
Inventor： Robert Kaim , Joseph D. Sweeney , Anthony M. Avila , Richard S. Ray
IPC: H01J37/317 , H01L21/265 , H01J37/08 , F17C7/00 , H01J37/30
CPC classification number: H01L21/2225 , F17C7/00 , H01J37/08 , H01J37/3002 , H01J37/3171 , H01J2237/022 , H01J2237/304 , H01L21/223 , H01L21/26506 , Y02E60/321 , Y10T428/13
Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.
Abstract translation: 通过利用同位素富集的掺杂剂材料或通过利用具有有效提供这种增强作用的补充气体的掺杂剂材料，离子注入系统和工艺，离子注入系统的离子源的性能和寿命得到增强。
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34.发明申请公开(公告)号：US20140322903A1
公开(公告)日：2014-10-30
申请号：US14331092
申请日：2014-07-14
Applicant: Entegris, Inc.
Inventor： James J. Mayer , Richard S. Ray , Robert Kaim , Joseph D. Sweeney
IPC: H01L21/265
CPC classification number: H01L21/2658 , C09K3/00 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/304 , H01L21/26506 , H01L21/302
Abstract: Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of 28Si, 29Si, and 30Si, and may include a supplemental gas including at least one of a co-species gas and a diluent gas. Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.
Abstract translation: 公开了同位素富集的硅前体组合物，用于离子注入以提高离子注入系统的性能，与相对于缺乏硅前体组合物的同位素富集的离子注入相关。 所述硅掺杂剂组合物包括在28Si，29Si和30Si中的至少一种中同位素富集的至少一种硅化合物，并且可以包括包括共同种类气体和稀释气体中的至少一种的补充气体。 描述了用于将离子注入机提供这种硅掺杂剂组合物的掺杂气体供应装置，以及包括这种掺杂剂气体供应装置的离子注入系统。
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公开(公告)号：US11827973B2
公开(公告)日：2023-11-28
申请号：US17688613
申请日：2022-03-07
Applicant: ENTEGRIS, INC.
Inventor： Oleg Byl , Ying Tang , Joseph R. Despres , Joseph D. Sweeney , Sharad N. Yedave
IPC: C23C14/48 , C23C14/56 , H01J37/08 , H01J37/317
CPC classification number: C23C14/48 , C23C14/564 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/022
Abstract: The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF4) and hydrogen (H2) gases to an ion implantation apparatus, so H2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF4 and H2 are present in a volume ratio (GeF4:H2) in the range of 3:1 to 33:67. The use of the H2 gas in an amount in mixture or relative to the GeF4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge+ current gain and W+ peak reduction during au ion implantation procedure.
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Patent Agency Ranking
公开(公告)号：US20210370259A1
公开(公告)日：2021-12-02
申请号：US17398891
申请日：2021-08-10
Applicant: ENTEGRIS, INC.
Inventor： Lawrence H. Dubois , Donald J. Carruthers , Melissa A. Petruska , Edward A. Sturm , Shaun M. Wilson , Steven M. Lurcott , Bryan C. Hendrix , Joseph D. Sweeney , Michael J. Wodjenski , Oleg Byl , Ying Tang , Joseph R. Despres , Matthew Thomas Marlow , Christopher Scannell , Daniel Elzer , Kavita Murthi
Abstract: Adsorbents of varying types and forms are described, as usefully employed in gas supply packages that include a gas storage and dispensing vessel holding such adsorbent for storage of sorbate gas thereon, and a gas dispensing assembly secured to the vessel for discharging the sorbate gas from the gas supply package under dispensing conditions thereof. Corresponding gas supply packages are likewise described, and various methods of processing the adsorbent, and manufacturing the gas supply packages.
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37.发明授权公开(公告)号：US11062906B2
公开(公告)日：2021-07-13
申请号：US14912380
申请日：2014-08-14
Applicant: Entegris, Inc.
Inventor： Ying Tang , Joseph D. Sweeney , Tianniu Chen , James J. Mayer , Richard S. Ray , Oleg Byl , Sharad N. Yedave , Robert Kaim
IPC: H01L21/265 , H01J37/317 , H01J37/32
Abstract: Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.
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公开(公告)号：US20200206717A1
公开(公告)日：2020-07-02
申请号：US15773652
申请日：2016-11-04
Applicant: ENTEGRIS, INC.
Inventor： Lawrence H. Dubois , Donald J. Carruthers , Melissa A. Petruska , Edward A. Sturm , Shaun M. Wilson , Steven M. Lurcott , Bryan C. Hendrix , Joseph D. Sweeney , Michael J. Wodjenski , Oleg Byl , Ying Tang , Joseph R. Despres , Matthew Thomas Marlow , Christopher Scannell , Daniel Elzer , Kavita Murthi
Abstract: Adsorbents of varying types and forms are described, as usefully employed in gas supply packages that include a gas storage and dispensing vessel holding such adsorbent for storage of sorbate gas thereon, and a gas dispensing assembly secured to the vessel for discharging the sorbate gas from the gas supply package under dispensing conditions thereof. Corresponding gas supply packages are likewise described, and various methods of processing the adsorbent, and manufacturing the gas supply packages.
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公开(公告)号：US20190078696A1
公开(公告)日：2019-03-14
申请号：US15743109
申请日：2016-07-08
Applicant: Entegris, Inc.
Inventor： Glenn M. Tom , Karl W. Olander , James A. Dietz , Michael J. Wodjenski , Edward A. Sturm , Susan K. Dimascio , Luping Wang , James V. McManus , Steven M. Lurcott , Jose I. Amo , Paul J. Marganski , Joseph D. Sweeney , Shaun M. Wilson , Steven E. Bishop , Greg Nelson , Donald J. Carruthers , Sharad N. Yedave , Ying Tang , Joseph Despres , Barry Chambers , Richard Ray , Daniel Elzer
Abstract: Fluid supply packages of varying types are described, which are useful for delivery of fluids to fluid-utilizing facilities such as semiconductor manufacturing facilities, solar panel manufacturing facilities, and flat-panel display manufacturing facilities. The fluid supply packages include fluid supply vessels and valve heads of varied configuration, as useful to constitute fluid supply packages that are pressure-regulated and/or adsorbent-based in character.
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公开(公告)号：US10109488B2
公开(公告)日：2018-10-23
申请号：US15507859
申请日：2015-08-19
Applicant: Entegris, Inc.
Inventor： Oleg Byl , Sharad N. Yedave , Joseph D. Sweeney , Barry Lewis Chambers , Ying Tang
IPC: H01J37/00 , H01L21/265 , H01J37/08 , H01J37/317 , H01J37/244 , H01L31/18
Abstract: Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphorus-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.
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