公开(公告)号：US20100166945A1

公开(公告)日：2010-07-01

申请号：US12654721

申请日：2009-12-30

Applicant: Ho-Ki Lee ,  Sung-Ho Han ,  Yong-Jin Kim

Inventor： Ho-Ki Lee ,  Sung-Ho Han ,  Yong-Jin Kim

IPC: C23C14/54 ,  C23C16/513

CPC classification number: C23C16/52

Abstract: A method of calculating a thickness of a layer may include forming the layer on a substrate in a chamber, measuring optical emission spectrum data from the chamber, and calculating the thickness of the layer from the optical emission spectrum data. A method of forming a layer may include depositing the layer on a substrate in a chamber, measuring optical emission spectrum data from the chamber, calculating a thickness of the layer using the optical emission spectrum data, and ending the depositing of the layer when the calculated thickness of the layer is within a target thickness range.

Abstract translation: 计算层的厚度的方法可以包括在室中的基板上形成层，测量来自室的光发射光谱数据，以及根据光发射光谱数据计算层的厚度。 形成层的方法可以包括将层沉积在室中的衬底上，从腔室测量光发射光谱数据，使用光发射光谱数据计算层的厚度，并且当所计算的 该层的厚度在目标厚度范围内。

公开(公告)号：US07723217B2

公开(公告)日：2010-05-25

申请号：US12332198

申请日：2008-12-10

Applicant: Ho-Jun Lee ,  Doo-Soo Kim ,  Dong-Kun Lee ,  Yong-Jin Kim

Inventor： Ho-Jun Lee ,  Doo-Soo Kim ,  Dong-Kun Lee ,  Yong-Jin Kim

IPC: H01L21/20

CPC classification number: C30B29/406 ,  C30B25/18

Abstract: The present invention relates to a method for manufacturing a gallium nitride single crystalline substrate, including (a) growing a gallium nitride film on a flat base substrate made of a material having a smaller coefficient of thermal expansion than gallium nitride and cooling the gallium nitride film to bend convex upwards the base substrate and the gallium nitride film and create cracks in the gallium nitride film; (b) growing a gallium nitride single crystalline layer on the crack-created gallium nitride film located on the convex upward base substrate; and (c) cooling a resultant product having the grown gallium nitride single crystalline layer to make the convex upward resultant product flat or bend convex downwards the convex upward resultant product and at the same time to self-split the base substrate and the gallium nitride single crystalline layer from each other at the crack-created gallium nitride film interposed therebetween.

Abstract translation: 本发明涉及一种用于制造氮化镓单晶衬底的方法，包括（a）在具有比氮化镓更小的热膨胀系数的材料制成的平坦基底衬底上生长氮化镓膜并冷却氮化镓膜 使基底和氮化镓膜向上弯曲并在氮化镓膜中产生裂纹; （b）在位于凸起的上方的基底基板上的裂纹产生的氮化镓膜上生长氮化镓单晶层; 和（c）冷却具有生长的氮化镓单晶层的所得产物，以使凸起的上升产物平坦或向上凸起向上凸起的产生产物，同时使基底和氮化镓单层自分裂 在其间形成的裂纹产生的氮化镓膜彼此相互结合。

公开(公告)号：US20080085734A1

公开(公告)日：2008-04-10

申请号：US11806909

申请日：2007-06-05

Applicant: Jin-U Kim ,  Seung-Hwan Kim ,  Jong-Kyun Shin ,  Young-Hwan Kim ,  Yong-Jin Kim ,  Jae-Ho Lee ,  Jae-Bong Chun ,  Seong-Ho Yoon

Inventor： Jin-U Kim ,  Seung-Hwan Kim ,  Jong-Kyun Shin ,  Young-Hwan Kim ,  Yong-Jin Kim ,  Jae-Ho Lee ,  Jae-Bong Chun ,  Seong-Ho Yoon

IPC: H04M1/00

CPC classification number: H04B1/18

Abstract: A method and device for receiving a digital multimedia broadcasting (DMB) signal in a wireless terminal where an external antenna is detachable from the wireless terminal, an internal antenna is embedded in the wireless terminal, a switch connects one of the external antenna and the internal antenna to a DMB receiver. The DMB receiver receives a DMB signal through one of the external antenna and the internal antenna. A controller controls the switch to connect the internal antenna and transmit the DMB signal to the DMB receiver when the external antenna is detached from the wireless terminal and controls the switch to connect the external antenna to the DMB receiver and transmit the DMB signal to the DMB receiver, when the external antenna is attached to the wireless terminal.

Abstract translation: 一种用于在无线终端中接收数字多媒体广播（DMB）信号的方法和装置，其中外部天线可从无线终端拆卸，内部天线嵌入在无线终端中，开关将外部天线和内部天线之一连接起来 天线到DMB接收机。 DMB接收机通过外部天线和内部天线之一接收DMB信号。 当外部天线与无线终端分离时，控制器控制交换机连接内部天线并将DMB信号发送到DMB接收机，并控制交换机将外部天线连接到DMB接收机，并将DMB信号发送到DMB 接收机，当外部天线连接到无线终端时。

公开(公告)号：US20080062084A1

公开(公告)日：2008-03-13

申请号：US11853684

申请日：2007-09-11

Applicant: Yong-Jin Kim

Inventor： Yong-Jin Kim

IPC: G09G3/28

CPC classification number: G09G3/2803 ,  G09G3/2029 ,  G09G3/2946 ,  G09G2310/066 ,  G09G2320/0238 ,  G09G2320/0271 ,  G09G2320/0606 ,  G09G2320/0626

Abstract: A gray-scale representation method for a plasma display panel, which method includes arranging, in time sequence, a plurality of subfields each having a brightness weight and achieving gray-scale representation by a combination of the subfields, each subfield including an address period and a sustain period. In the gray-scale representation method, the number of sustain pulses for each subfield is determined so that a light generated from the difference of the number of sustain pulses between two adjacent gray scales can be greater than a light discharged in the address period, when the number of subfields for the higher one of the two adjacent gray scales is less than that for the lower one. The reversion of gray scales that occurs when the address light is increased as high as the sustain light can be eliminated to achieve correct gray-scale representation. A smoother gray-scale representation can be achieved with reduced power consumption by adjusting the difference of the number of sustain pulses between the two adjacent gray scales in consideration of the address light.

Abstract translation: 一种用于等离子体显示面板的灰度表示方法，该方法包括按时间顺序排列多个子场，每个子场具有亮度权重，并通过子场的组合实现灰度表示，每个子场包括地址周期和 维持期 在灰阶表示方法中，确定每个子场的维持脉冲数，使得从两个相邻灰度级之间的维持脉冲数的差异产生的光可以大于在寻址周期中放出的光，当 两个相邻灰度中较高的一个灰度级的子场数小于下一个灰度级的子场数。 当可以消除地址光增加到持续光的高度时发生的灰度的反转，以获得正确的灰度级表示。 考虑到地址光，可以通过调整两个相邻灰度级之间的维持脉冲数量的差异来降低功耗，从而实现更平滑的灰度表示。

公开(公告)号：US07307703B2

公开(公告)日：2007-12-11

申请号：US11015087

申请日：2004-12-17

Applicant: Yong-Jin Kim ,  Hyun-Kyu Kang ,  Seung-Young Son ,  Gyung-Jin Min

Inventor： Yong-Jin Kim ,  Hyun-Kyu Kang ,  Seung-Young Son ,  Gyung-Jin Min

IPC: G01N21/00

CPC classification number: G01N21/68

Abstract: An etching end point of a plasma etch is determined by defining an etch-stop condition. A layer formed on a substrate is etched using a plasma. A luminous intensity of the plasma is measured to determine a first luminous intensity. The luminous intensity is measured again after a predetermined time to determine a second luminous intensity. A determination is made whether a disturbance occurs. Compensation is applied to the measured luminous intensity if the disturbance occurs. A determination is made whether the measured luminous intensity or the compensated luminous intensity satisfies the etch stop condition.

Abstract translation: 通过限定蚀刻停止条件来确定等离子体蚀刻的蚀刻终点。 使用等离子体蚀刻在基板上形成的层。 测量等离子体的发光强度以确定第一发光强度。 在预定时间之后再次测量发光强度，以确定第二发光强度。 确定是否发生干扰。 如果发生干扰，则对测量的发光强度进行补偿。 确定测量的发光强度或补偿发光强度是否满足蚀刻停止条件。

公开(公告)号：US20060205197A1

公开(公告)日：2006-09-14

申请号：US11202126

申请日：2005-08-11

Applicant: Gyu-Chul Yi ,  Sung-Jin An ,  Yong-Jin Kim ,  Dong-Kun Lee

Inventor： Gyu-Chul Yi ,  Sung-Jin An ,  Yong-Jin Kim ,  Dong-Kun Lee

IPC: H01L31/00 ,  H01L21/3205 ,  H01L29/739 ,  H01L21/4763

CPC classification number: H01L33/12 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L31/0296 ,  H01L31/035281 ,  H01L33/007

Abstract: A compound semiconductor device and method of manufacturing the same. The method includes coating a plurality of spherical balls on a substrate and selectively growing a compound semiconductor thin film on the substrate on which the spherical balls are coated. The entire process can be simplified and a high-quality compound semiconductor thin film can be grown in a short amount of time in comparison to an epitaxial lateral overgrowth (ELO) method.

Abstract translation: 一种化合物半导体器件及其制造方法。 该方法包括在基板上涂覆多个球形球，并且在其上涂覆有球形球的基底上选择性地生长化合物半导体薄膜。 与外延横向过度生长（ELO）方法相比，可以简化整个过程并且可以在短时间内生长高质量的化合物半导体薄膜。

公开(公告)号：US07050013B2

公开(公告)日：2006-05-23

申请号：US11023723

申请日：2004-12-28

Applicant: Yong-Jin Kim ,  Do-Hoon Kwon ,  Seong-Soo Lee

Inventor： Yong-Jin Kim ,  Do-Hoon Kwon ,  Seong-Soo Lee

IPC: H01Q13/10

CPC classification number: H01Q13/106 ,  H01Q13/10

Abstract: A planar antenna manufactured by patterning a substrate consisting of a dielectric layer, and first and second conductive layers applied, respectively, to both opposite surfaces of the dielectric layer. A first slot is formed in the first conductive layer for radiating electric waves. A second slot is formed in the first conductive layer for intercepting a particular frequency of the electric waves radiated by the first slot. A power supply portion is formed with the first conductive layer for supplying electric current to the first slot. A radiating element formed with the second conductive layer, which is excited by the electric waves radiated by the first slot, and radiates the electric waves.

Abstract translation: 通过将由电介质层构成的衬底图案化并分别施加到电介质层的两个相对表面的第一和第二导电层制造的平面天线。 在用于辐射电波的第一导电层中形成第一槽。 在第一导电层中形成第二槽，用于截取由第一槽辐射的电波的特定频率。 电源部形成有用于向第一槽供给电流的第一导电层。 形成有由第一槽辐射的电波激励的第二导电层并辐射电波的辐射元件。

公开(公告)号：US06958737B2

公开(公告)日：2005-10-25

申请号：US10811548

申请日：2004-03-29

Applicant: Ju-Hyung Lee ,  Yong-Jin Kim

Inventor： Ju-Hyung Lee ,  Yong-Jin Kim

IPC: H01Q1/24 ,  H01Q7/00

CPC classification number: H01Q1/243 ,  H01Q1/245 ,  H01Q7/00

Abstract: A loop antenna for a mobile terminal capable of reducing SAR. The loop antenna has three lines. The first line generates and transmits predetermined electric waves upon receiving current from an oscillator for oscillating power and has a connection point to connect an external line thereto. The second line includes a first end connected to a printed circuit board to ground current supplied to the first line and a second end having an opened structure. The third line has a first end connected to one side of the first line through the connection point and a second end connected to one side of the second line coupled to the printed circuit board in order to receive current from the first line through the connection point and transmit current into the second line.

Abstract translation: 用于能够减少SAR的移动终端的环形天线。 环形天线有三条线。 第一行在从用于振荡功率的振荡器接收电流的同时产生并发送预定的电波，并且具有连接点以连接外部线路。 第二线包括连接到印刷电路板的第一端和提供给第一线的接地电流，以及具有开放结构的第二端。 第三线具有通过连接点连接到第一线的一侧的第一端和连接到耦合到印刷电路板的第二线的一侧的第二端，以便从第一线通过连接点接收电流 并将电流传输到第二线路。

公开(公告)号：US20050134835A1

公开(公告)日：2005-06-23

申请号：US11015087

申请日：2004-12-17

Applicant: Yong-Jin Kim ,  Hyun-Kyu Kang ,  Seung-Young Son ,  Gyung-Jin Min

Inventor： Yong-Jin Kim ,  Hyun-Kyu Kang ,  Seung-Young Son ,  Gyung-Jin Min

IPC: H01L21/3065 ,  G01N21/00 ,  G01N21/68

CPC classification number: G01N21/68

Abstract: An etching end point of a plasma etch is determined by defining an etch-stop condition. A layer formed on a substrate is etched using a plasma. A luminous intensity of the plasma is measured to determine a first luminous intensity. The luminous intensity is measured again after a predetermined time to determine a second luminous intensity. A determination is made whether a disturbance occurs. Compensation is applied to the measured luminous intensity if the disturbance occurs. A determination is made whether the measured luminous intensity or the compensated luminous intensity satisfies the etch stop condition.

Abstract translation: 通过限定蚀刻停止条件来确定等离子体蚀刻的蚀刻终点。 使用等离子体蚀刻在基板上形成的层。 测量等离子体的发光强度以确定第一发光强度。 在预定时间之后再次测量发光强度，以确定第二发光强度。 确定是否发生干扰。 如果发生干扰，则对测量的发光强度进行补偿。 确定测量的发光强度或补偿发光强度是否满足蚀刻停止条件。

公开(公告)号：US06688923B2

公开(公告)日：2004-02-10

申请号：US10303528

申请日：2002-11-25

Applicant: Myung-Jin Lee ,  Yong-Jin Kim ,  Jong-Yong Choi

Inventor： Myung-Jin Lee ,  Yong-Jin Kim ,  Jong-Yong Choi

IPC: H01R1122

CPC classification number: H01L21/68792 ,  H01R13/03 ,  H01R13/04

Abstract: The present invention provides a susceptor power-interface assembly which is used for a chamber process module that includes a power supply, a process chamber and a susceptor, wherein the susceptor includes a susceptor shaft penetrating a bottom of the process chamber and a susceptor base on which a wafer is disposed for the process. The susceptor power-interface assembly electrically connects the power supply to the susceptor base. For the electrical-connection between the power supply to the suceptor base, the susceptor power-interface assembly includes a first flange at the end of the susceptor shaft, the first flange bent outside from the susceptor shaft; a second flange having a circular shape, the second flange coupled with the first flange using screws; a plurality of connectors penetrating the second flange, wherein one part of each connector is disposed on the inner surface of the second flange and electrically connected to the susceptor base, wherein the other part of each connector is disposed on the outer surface of the second flange; and a plurality of power boots each having a hole so as to cap each connector disposed on the outer surface of the second flange, wherein each connector slide into the hole of each power boot to be coupled with the power boot. The susceptor power-interface assembly further includes an O-ring packing that is interposed between the first and second flanges and made of Teflon.

Abstract translation: 本发明提供了一种用于腔室处理模块的基座电源接口组件，其包括电源，处理室和基座，其中，所述基座包括穿过所述处理室底部的基座轴和基座 其中为该工艺设置晶片。 基座电源接口组件将电源电连接到基座。 为了在受电基座的电源之间的电连接，基座电源接口组件包括在基座轴端部的第一凸缘，第一凸缘从基座轴向外弯曲; 具有圆形形状的第二凸缘，所述第二凸缘使用螺钉与所述第一凸缘联接; 穿过所述第二凸缘的多个连接器，其中每个连接器的一部分设置在所述第二凸缘的内表面上并电连接到所述基座，其中每个连接器的另一部分设置在所述第二凸缘的外表面上 ; 以及多个动力靴，每个动力靴具有孔，以便盖住设置在第二凸缘的外表面上的每个连接器，其中每个连接器滑入每个动力靴的孔中以与动力靴相连。 基座电源接口组件还包括插入在第一和第二凸缘之间并由特氟纶制成的O形密封圈。