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    Methods of determining an etching end point based on compensation for etching disturbances
    1.
    发明授权
    Methods of determining an etching end point based on compensation for etching disturbances 失效
    基于蚀刻扰动的补偿确定蚀刻终点的方法

    公开(公告)号：US07307703B2

    公开(公告)日：2007-12-11

    申请号：US11015087

    申请日：2004-12-17

    Applicant: Yong-Jin Kim ,  Hyun-Kyu Kang ,  Seung-Young Son ,  Gyung-Jin Min

    Inventor： Yong-Jin Kim ,  Hyun-Kyu Kang ,  Seung-Young Son ,  Gyung-Jin Min

    IPC: G01N21/00

    CPC classification number: G01N21/68

    Abstract: An etching end point of a plasma etch is determined by defining an etch-stop condition. A layer formed on a substrate is etched using a plasma. A luminous intensity of the plasma is measured to determine a first luminous intensity. The luminous intensity is measured again after a predetermined time to determine a second luminous intensity. A determination is made whether a disturbance occurs. Compensation is applied to the measured luminous intensity if the disturbance occurs. A determination is made whether the measured luminous intensity or the compensated luminous intensity satisfies the etch stop condition.

    Abstract translation: 通过限定蚀刻停止条件来确定等离子体蚀刻的蚀刻终点。 使用等离子体蚀刻在基板上形成的层。 测量等离子体的发光强度以确定第一发光强度。 在预定时间之后再次测量发光强度，以确定第二发光强度。 确定是否发生干扰。 如果发生干扰，则对测量的发光强度进行补偿。 确定测量的发光强度或补偿发光强度是否满足蚀刻停止条件。

    Information generation and retrieval method based on standardized format of sentence structure and semantic structure and system using the same
    3.
    发明授权
    Information generation and retrieval method based on standardized format of sentence structure and semantic structure and system using the same 失效
    基于句法结构和语义结构与系统标准化格式的信息生成和检索方法

    公开(公告)号：US06947923B2

    公开(公告)日：2005-09-20

    申请号：US09852317

    申请日：2001-05-08

    Applicant: Keon-Hoe Cha ,  Eui-Sok Chung ,  Soo-Jung Lim ,  Hyun-Kyu Kang

    Inventor： Keon-Hoe Cha ,  Eui-Sok Chung ,  Soo-Jung Lim ,  Hyun-Kyu Kang

    IPC: G06F17/30

    CPC classification number: G06F17/30684 ,  Y10S707/99932 ,  Y10S707/99933 ,  Y10S707/99935

    Abstract: The present invention relates to an information generation and retrieval apparatus based on a standardized format of sentence structure and semantic structure and a method thereof and a computer readable recording medium for recording a program for implementing the method. The method for generating and retrieving information for use in an apparatus for generating and retrieving information based on standardized formats of sentence structure and semantic structure, comprises a first step of transforming a natural language sentence (information and knowledge) described by a information provider to a conceptual graph depending on standardized formats of sentence structure and semantic structure and indexing the conceptual graph; and a second step of transforming a natural language query sentence inputted from a user to a conceptual graph depending on the standardized formats of sentence structure and semantic structure and searching information relevant to the requirement of the user among the indexed information.

    Abstract translation: 本发明涉及一种基于句子结构和语义结构的标准化格式的信息生成和检索装置及其方法和用于记录用于实现该方法的程序的计算机可读记录介质。 用于生成和检索用于基于句子结构和语义结构的标准化格式生成和检索信息的装置的信息的方法包括将由信息提供者描述的自然语言句子（信息和知识）变换为 概念图取决于句子结构和语义结构的标准化格式，并将概念图索引; 以及第二步骤，根据句子结构和语义结构的标准化格式以及与索引信息中的用户需求相关的搜索信息，将从用户输入的自然语言查询语句转换为概念图。

    Methods of determining an etching end point based on compensation for etching distubances
    4.
    发明申请
    Methods of determining an etching end point based on compensation for etching distubances 失效
    基于蚀刻绝缘的补偿确定蚀刻终点的方法

    公开(公告)号：US20050134835A1

    公开(公告)日：2005-06-23

    申请号：US11015087

    申请日：2004-12-17

    Applicant: Yong-Jin Kim ,  Hyun-Kyu Kang ,  Seung-Young Son ,  Gyung-Jin Min

    Inventor： Yong-Jin Kim ,  Hyun-Kyu Kang ,  Seung-Young Son ,  Gyung-Jin Min

    IPC: H01L21/3065 ,  G01N21/00 ,  G01N21/68

    CPC classification number: G01N21/68

    Abstract: An etching end point of a plasma etch is determined by defining an etch-stop condition. A layer formed on a substrate is etched using a plasma. A luminous intensity of the plasma is measured to determine a first luminous intensity. The luminous intensity is measured again after a predetermined time to determine a second luminous intensity. A determination is made whether a disturbance occurs. Compensation is applied to the measured luminous intensity if the disturbance occurs. A determination is made whether the measured luminous intensity or the compensated luminous intensity satisfies the etch stop condition.

    Abstract translation: 通过限定蚀刻停止条件来确定等离子体蚀刻的蚀刻终点。 使用等离子体蚀刻在基板上形成的层。 测量等离子体的发光强度以确定第一发光强度。 在预定时间之后再次测量发光强度，以确定第二发光强度。 确定是否发生干扰。 如果发生干扰，则对测量的发光强度进行补偿。 确定测量的发光强度或补偿发光强度是否满足蚀刻停止条件。

    Endpoint detector for a substrate manufacturing process
    6.
    发明申请
    Endpoint detector for a substrate manufacturing process 审中-公开
    用于衬底制造工艺的端点检测器

    公开(公告)号：US20050127192A1

    公开(公告)日：2005-06-16

    申请号：US11010299

    申请日：2004-12-14

    Applicant: Hyun-Kyu Kang ,  No-Hyun Huh ,  Yong-Jin Kim ,  Kiw-Sang Kim ,  Seung-Ki Chae

    Inventor： Hyun-Kyu Kang ,  No-Hyun Huh ,  Yong-Jin Kim ,  Kiw-Sang Kim ,  Seung-Ki Chae

    IPC: H01L21/3065 ,  G05D23/22 ,  H01L21/306 ,  G05D23/00 ,  F25B5/00 ,  F25B29/00 ,  F28F1/00

    CPC classification number: G05D23/22 ,  G05D23/1934

    Abstract: An endpoint detector has a window, a first temperature control unit, a second temperature control unit and an analyzing unit. The window transmits light emitted from plasma in a processing chamber, and covers a passage through a sidewall of the processing chamber. The first temperature control unit maintains the window at a first temperature. The second temperature control unit maintains an inner surface of the passage at a second temperature, which is lower than the first temperature. The analyzing unit analyzes the light and determines an endpoint of a process in the processing chamber.

    Abstract translation: 端点检测器具有窗口，第一温度控制单元，第二温度控制单元和分析单元。 该窗口在处理室中透射从等离子体发射的光，并且覆盖通过处理室的侧壁的通道。 第一温度控制单元将窗口保持在第一温度。 第二温度控制单元在低于第一温度的第二温度下保持通道的内表面。 分析单元分析光并确定处理室中的过程的端点。

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