公开(公告)号：US07112810B2

公开(公告)日：2006-09-26

申请号：US10964735

申请日：2004-10-15

Applicant: Gyeong-Su Keum ,  Seung-Ki Chae ,  Hyung-Sik Hong ,  Sang-Yeob Cha ,  Jae-Hyun Han ,  Tae-Sub Im ,  Hyun-Kyu Kang ,  Gil-Jung Yun ,  Doo-Guen Song

Inventor： Gyeong-Su Keum ,  Seung-Ki Chae ,  Hyung-Sik Hong ,  Sang-Yeob Cha ,  Jae-Hyun Han ,  Tae-Sub Im ,  Hyun-Kyu Kang ,  Gil-Jung Yun ,  Doo-Guen Song

IPC: H01J37/08 ,  H01J37/244

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/0044

Abstract: In an ion implanting apparatus and an ion implanting method using the same, the ion implanting apparatus includes a disk chamber containing a rotatable disk, a wafer mounted on the rotatable disk, and a charge sensor for monitoring a charged state of the wafer, the charge sensor being fixed to the disk chamber to be adjacent to and facing a surface of the wafer. An output of the charge sensor may be used as feedback to control the charged state of the wafer.

Abstract translation: 在离子注入装置和使用其的离子注入装置的离子注入方法中，离子注入装置包括容纳可旋转盘的盘室，安装在可旋转盘上的晶片和用于监测晶片充电状态的充电传感器， 传感器固定到盘室以与晶片的表面相邻并且面对晶片的表面。 电荷传感器的输出可以用作反馈以控制晶片的充电状态。

公开(公告)号：US07560712B2

公开(公告)日：2009-07-14

申请号：US11845187

申请日：2007-08-27

Applicant: Il-Kyoung Kim ,  No-Hyun Huh ,  Tae-Won Lee ,  Sung-Wook Park ,  Ki-Young Yun ,  Won-Soon Lee ,  Young-Ha Yoon ,  Tae-Sub Im

Inventor： Il-Kyoung Kim ,  No-Hyun Huh ,  Tae-Won Lee ,  Sung-Wook Park ,  Ki-Young Yun ,  Won-Soon Lee ,  Young-Ha Yoon ,  Tae-Sub Im

IPC: H01J37/317 ,  H01J37/305

CPC classification number: H01J37/32495 ,  H01J37/32082 ,  H01J37/32412

Abstract: An apparatus and method of doping ions into a substrate are disclosed and include a process chamber having an inner space in which an ion implantation process is performed, a support unit positioned in the process chamber, supporting a substrate and being electrically connected to a first power source for generating a high frequency pulse, a conductive unit separated from the support unit in such a manner that plasma associated with the ion implantation process is generated between the support unit and the conductive unit, wherein the conductive unit comprises a first etch prevention member preventing the conductive unit from being etched by a source gas used to generate the plasma, and a power port electrically connected to a second power source and generating radio frequency (RF) power applied to the conductive unit.

Abstract translation: 公开了将离子掺杂到衬底中的装置和方法，并且包括具有进行离子注入工艺的内部空间的处理室，位于处理室中的支撑单元，支撑衬底并与第一电力电连接 源，用于产生高频脉冲，导电单元与支撑单元分离，使得在支撑单元和导电单元之间产生与离子注入工艺相关联的等离子体，其中导电单元包括防止 导电单元被用于产生等离子体的源气体进行蚀刻，以及电连接到第二电源并产生施加到导电单元的射频（RF）功率的电源端口。

公开(公告)号：US20050133737A1

公开(公告)日：2005-06-23

申请号：US10964735

申请日：2004-10-15

Applicant: Gyeong-Su Keum ,  Seung-Ki Chae ,  Hyung-Sik Hong ,  Sang-Yeob Cha ,  Jae-Hyun Han ,  Tae-Sub Im ,  Hyun-Kyu Kang ,  Gil-Jun Yun ,  Doo-Guen Song

Inventor： Gyeong-Su Keum ,  Seung-Ki Chae ,  Hyung-Sik Hong ,  Sang-Yeob Cha ,  Jae-Hyun Han ,  Tae-Sub Im ,  Hyun-Kyu Kang ,  Gil-Jun Yun ,  Doo-Guen Song

IPC: H01L21/265 ,  H01J37/08 ,  H01J37/304 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/0044

Abstract: In an ion implanting apparatus and an ion implanting method using the same, the ion implanting apparatus includes a disk chamber containing a rotatable disk, a wafer mounted on the rotatable disk, and a charge sensor for monitoring a charged state of the wafer, the charge sensor being fixed to the disk chamber to be adjacent to and facing a surface of the wafer. An output of the charge sensor may be used as feedback to control the charged state of the wafer.

Abstract translation: 在离子注入装置和使用其的离子注入装置的离子注入方法中，离子注入装置包括容纳可旋转盘的盘室，安装在可旋转盘上的晶片和用于监测晶片充电状态的充电传感器， 传感器固定到盘室以与晶片的表面相邻并且面对晶片的表面。 电荷传感器的输出可以用作反馈以控制晶片的充电状态。

公开(公告)号：US20080054194A1

公开(公告)日：2008-03-06

申请号：US11845187

申请日：2007-08-27

Applicant: Il-Kyoung KIM ,  No-Hyun HUH ,  Tae-Won LEE ,  Sung-Wook PARK ,  Ki-Young YUN ,  Won-Soon LEE ,  Young-Ha YOON ,  Tae-Sub IM

Inventor： Il-Kyoung KIM ,  No-Hyun HUH ,  Tae-Won LEE ,  Sung-Wook PARK ,  Ki-Young YUN ,  Won-Soon LEE ,  Young-Ha YOON ,  Tae-Sub IM

IPC: H01J37/08

CPC classification number: H01J37/32495 ,  H01J37/32082 ,  H01J37/32412

Abstract: An apparatus and method of doping ions into a substrate are disclosed and include a process chamber having an inner space in which an ion implantation process is performed, a support unit positioned in the process chamber, supporting a substrate and being electrically connected to a first power source for generating a high frequency pulse, a conductive unit separated from the support unit in such a manner that plasma associated with the ion implantation process is generated between the support unit and the conductive unit, wherein the conductive unit comprises a first etch prevention member preventing the conductive unit from being etched by a source gas used to generate the plasma, and a power port electrically connected to a second power source and generating radio frequency (RF) power applied to the conductive unit.

Abstract translation: 公开了将离子掺杂到衬底中的装置和方法，并且包括具有进行离子注入工艺的内部空间的处理室，位于处理室中的支撑单元，支撑衬底并与第一电力电连接 源，用于产生高频脉冲，导电单元与支撑单元分离，使得在支撑单元和导电单元之间产生与离子注入工艺相关联的等离子体，其中导电单元包括防止 导电单元被用于产生等离子体的源气体进行蚀刻，以及电连接到第二电源并产生施加到导电单元的射频（RF）功率的电源端口。