公开(公告)号：US20110315996A1

公开(公告)日：2011-12-29

申请号：US13057136

申请日：2009-07-29

Applicant: Yong Jin Kim ,  Dong Kun Lee ,  Doo Soo Kim

Inventor： Yong Jin Kim ,  Dong Kun Lee ,  Doo Soo Kim

IPC: H01L29/12 ,  H01L21/20 ,  H01L33/62

CPC classification number: H01L33/12 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/3081 ,  H01L33/007 ,  H01L33/382

Abstract: Disclosed are a semiconductor device, a light emitting device, and a method of manufacturing the same. The semiconductor device includes a substrate, a plurality of rods aligned on the substrate, a metal layer disposed on the substrate between the rods, and a semiconductor layer disposed on and between the rods. Electrical and optical characteristics of the semiconductor device are improved due to the metal layer.

Abstract translation: 公开了一种半导体器件，发光器件及其制造方法。 半导体器件包括衬底，在衬底上对准的多个杆，设置在杆之间的衬底上的金属层和设置在杆之间和之间的半导体层。 由于金属层，半导体器件的电气和光学特性得到改善。

公开(公告)号：US20110129953A1

公开(公告)日：2011-06-02

申请号：US12955222

申请日：2010-11-29

Applicant: Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

Inventor： Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

IPC: H01L33/32 ,  H01L21/20

CPC classification number: H01L21/0254 ,  H01L21/0237 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0079

Abstract: A method of manufacturing a nitride semiconductor device is disclosed. The method includes forming a gallium nitride (GaN) epitaxial layer on a first support substrate, forming a second support substrate on the GaN epitaxial layer, forming a passivation layer on a surface of the other region except for the first support substrate, etching the first support substrate by using the passivation layer as a mask, and removing the passivation layer and thereby exposing the second support substrate and the GaN epitaxial layer.

Abstract translation: 公开了一种制造氮化物半导体器件的方法。 该方法包括在第一支撑衬底上形成氮化镓（GaN）外延层，在GaN外延层上形成第二支撑衬底，在除第一支撑衬底之外的另一个区域的表面上形成钝化层，蚀刻第一衬底 通过使用钝化层作为掩模来支撑衬底，以及去除钝化层，从而暴露第二支撑衬底和GaN外延层。

公开(公告)号：US07915698B2

公开(公告)日：2011-03-29

申请号：US12002338

申请日：2007-12-14

Applicant: Doo-Soo Kim ,  Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee

Inventor： Doo-Soo Kim ,  Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee

IPC: H01L29/82

CPC classification number: H01L21/02658 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/0254

Abstract: The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses on the base substrate that become larger from a central portion of the base substrate towards a peripheral portion when growing a nitride semiconductor film. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.

Abstract translation: 氮化镓半导体衬底及其制造方法技术领域本发明涉及氮化镓衬底等氮化物半导体衬底及其制造方法。 本发明在基底基板的下表面上形成多个沟槽，其构造成在生长氮化物半导体膜时吸收或减小从基底基板的中心部分朝向周边部分变大的基底基板上的应力。 也就是说，本发明在基底基板的下表面上形成沟槽，使得间距变得较小，或者宽度或深度从基底基板的中心部朝向周边部分变大。

公开(公告)号：US20090068822A1

公开(公告)日：2009-03-12

申请号：US12177490

申请日：2008-07-22

Applicant: Yong-Jin KIM ,  Ji-Hoon KIM ,  Dong-Kun LEE ,  Doo-Soo KIM ,  Ho-Jun LEE

Inventor： Yong-Jin KIM ,  Ji-Hoon KIM ,  Dong-Kun LEE ,  Doo-Soo KIM ,  Ho-Jun LEE

IPC: H01L21/20 ,  C30B25/00

CPC classification number: C30B29/406 ,  C30B25/02 ,  C30B25/18

Abstract: Provided is a method for preparing a substrate for growing gallium nitride and a gallium nitride substrate. The method includes performing thermal cleaning on a surface of a silicon substrate, forming a silicon nitride (Si3N4) micro-mask on the surface of the silicon substrate in an in situ manner, and growing a gallium nitride layer through epitaxial lateral overgrowth (ELO) using an opening in the micro-mask. According to the method, by improving the typical ELO, it is possible to simplify the method for preparing the substrate for growing gallium nitride and the gallium nitride substrate and reduce process cost.

Abstract translation: 提供一种制备用于生长氮化镓和氮化镓衬底的衬底的方法。 该方法包括在硅衬底的表面上进行热清洗，以原位方式在硅衬底的表面上形成氮化硅（Si 3 N 4）微掩模，并通过外延横向过度生长（ELO）生长氮化镓层， 在微面罩中使用开口。 根据该方法，通过改善典型的ELO，可以简化制备用于生长氮化镓和氮化镓衬底的衬底的方法，并降低工艺成本。

公开(公告)号：US20080142846A1

公开(公告)日：2008-06-19

申请号：US12002338

申请日：2007-12-14

Applicant: Doo-Soo Kim ,  Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee

Inventor： Doo-Soo Kim ,  Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee

IPC: H01L29/267 ,  H01L21/205

CPC classification number: H01L21/02658 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/0254

Abstract: The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses applied larger when growing a nitride semiconductor film on the base substrate from a central portion of the base substrate towards a peripheral portion. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.

Abstract translation: 氮化镓半导体衬底及其制造方法技术领域本发明涉及氮化镓衬底等氮化物半导体衬底及其制造方法。 本发明在基底基板的下表面上形成多个沟槽，该多个沟槽被配置为当从基底基板的中心部分向周边部分生长氮化物半导体膜时，吸收或减小施加更大的应力。 也就是说，本发明在基底基板的下表面上形成沟槽，使得间距变得较小，或者宽度或深度从基底基板的中心部朝向周边部分变大。

公开(公告)号：US20080105881A1

公开(公告)日：2008-05-08

申请号：US11982716

申请日：2007-11-02

Applicant: Yong-Jin Kim ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Dong-Kun Lee

Inventor： Yong-Jin Kim ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Dong-Kun Lee

IPC: H01L33/00 ,  H01L29/06 ,  H01L21/205

CPC classification number: H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/20 ,  H01L33/38

Abstract: The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.

Abstract translation: 化合物半导体基板及其制造方法技术领域本发明涉及化合物半导体基板及其制造方法。 本发明提供一种制造方法，其在基板上涂布球形球，在球形球之间形成金属层，去除球形球以形成开口，并从开口生长化合物半导体层。 根据本发明，与传统的ELO（外延横向生长）方法或在金属上形成化合物半导体层的方法相比，可以简化和简单且廉价地生产高质量的化合物半导体层 层。 并且，金属层用作发光器件和光反射膜的一个电极，以提供具有降低的功率消耗和高发光效率的发光器件。

公开(公告)号：US20070241986A1

公开(公告)日：2007-10-18

申请号：US11735169

申请日：2007-04-13

Applicant: Sung-Jun Lee ,  Kwang-Chun Lee ,  Chi-Hyung Ahn ,  Doo-Soo Kim ,  Wee-Sang Park

Inventor： Sung-Jun Lee ,  Kwang-Chun Lee ,  Chi-Hyung Ahn ,  Doo-Soo Kim ,  Wee-Sang Park

IPC: H01Q21/00 ,  H01Q11/12

CPC classification number: H01Q1/38 ,  H01Q7/00

Abstract: There is provided a windmill-shaped loop antenna including: a dielectric substrate; a first radiation unit disposed on a top surface of the dielectric substrate and including a metal pattern having loop pieces; a second radiation unit disposed at a bottom surface of the dielectric substrate and including a metal pattern having loop pieces arranged not to face the loop pieces of the first radiation unit; and a plurality of identical transmission line from a center of the top and bottom surfaces of the dielectric substrate to the first and second radiation units, which form windmill-shaped metal pattern with the first and second radiation unit.

Abstract translation: 提供了一种风车形环形天线，包括：电介质基板; 第一辐射单元，设置在电介质基板的顶表面上并且包括具有环形件的金属图案; 第二辐射单元，设置在所述电介质基板的底表面处，并且包括金属图案，所述金属图案具有被布置成不面对所述第一辐射单元的环形片的环片; 以及从电介质基板的顶表面和底表面的中心到第一和第二辐射单元的多条相同的传输线，其与第一和第二辐射单元形成风车形金属图案。

公开(公告)号：US11841356B2

公开(公告)日：2023-12-12

申请号：US17608536

申请日：2020-04-29

Applicant: Doo Soo Kim

Inventor： Doo Soo Kim

IPC: G01N33/24 ,  H02S20/10 ,  A01G25/16 ,  A01G20/00 ,  G01D21/02 ,  H02S10/00 ,  G06Q50/10

CPC classification number: G01N33/24 ,  A01G20/00 ,  A01G25/16 ,  G01D21/02 ,  G06Q50/10 ,  H02S10/00 ,  H02S20/10 ,  Y02E10/50 ,  Y10T137/189

Abstract: One aspect of the present invention relates to a lawn monitoring system, and more specifically, to a lawn monitoring system installed at various locations where lawn is created, such as a golf course, a soccer field, a baseball field, etc., to receive lawn status information, thereby enabling a lawn manager to manage the lawn based on the information received from the system. The lawn monitoring system according to an embodiment of the present invention has effects of accurately and efficiently transmitting the status information of the lawn in places where the lawn is created, such as a golf course, a soccer field, a baseball field, to a lawn manager.

公开(公告)号：US20110272703A1

公开(公告)日：2011-11-10

申请号：US13145790

申请日：2009-12-09

Applicant: Ho-Jun Lee ,  Dong-Kun Lee ,  Yong-Jin Kim ,  Doo-Soo Kim

Inventor： Ho-Jun Lee ,  Dong-Kun Lee ,  Yong-Jin Kim ,  Doo-Soo Kim

IPC: H01L29/12 ,  H01L21/20 ,  H01L33/02

CPC classification number: H01L33/007 ,  H01L33/0075 ,  H01L33/10 ,  H01L33/22

Abstract: Disclosed are a semiconductor device, a light emitting device and a method for manufacturing the same. The semiconductor device includes a substrate, a plurality of rods disposed on the substrate, a plurality of particles disposed between the rods and on the substrate, and a first semiconductor layer disposed on the rods. The method for manufacturing the semiconductor device includes preparing a substrate, disposing a plurality of first particles on the substrate, and forming a plurality of rods by etching a portion of the substrate by using the first particles as an etch mask. The semiconductor device effectively reflects in an upward direction light by the above particles, so that light efficiency is improved. The rods are easily formed by using the first particles.

Abstract translation: 公开了一种半导体器件，发光器件及其制造方法。 半导体器件包括衬底，设置在衬底上的多个棒，设置在杆之间和衬底上的多个颗粒以及设置在杆上的第一半导体层。 半导体器件的制造方法包括：准备基板，在基板上配置多个第一粒子，通过使用第一粒子作为蚀刻掩模，蚀刻基板的一部分来形成多个棒。 半导体器件通过上述粒子有效地向上方向反射光，从而提高光效率。 通过使用第一颗粒容易地形成棒。

公开(公告)号：US20100330294A1

公开(公告)日：2010-12-30

申请号：US12616128

申请日：2009-11-10

Applicant: Min Tae KIM ,  Doo Soo Kim ,  Won Young Oh

Inventor： Min Tae KIM ,  Doo Soo Kim ,  Won Young Oh

IPC: B05D1/08

CPC classification number: C23C4/04 ,  C23C4/02 ,  C23C4/11 ,  C23C4/12 ,  C23C4/123 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/1241 ,  F01D5/288 ,  F02C3/30 ,  F05D2230/90 ,  F05D2260/60 ,  Y02T50/67 ,  Y02T50/671

Abstract: Disclosed is a method for formation of a thermal bather coating on a gas turbine during operation thereof, which includes addition of an organic compound containing silicon to a fuel under a first condition in order to form a base layer on the surface of a part coming into contact with a combustion gas of the fuel in the gas turbine during operation thereof, as well as addition of the organic compound containing silicon to the fuel under a second condition in order to form a porous layer having more pores than the base layer above the base layer.

Abstract translation: 公开了一种在其运行期间在燃气轮机上形成热浴用涂层的方法，其包括在第一条件下向燃料中添加含硅的有机化合物，以在形成基底层的部分的表面上形成基层 在操作期间与燃气轮机中的燃料的燃烧气体接触，以及在第二条件下向燃料中加入含硅的有机化合物，以形成具有比基体上方的基底层更多的孔的多孔层 层。