Invention Grant
US07915698B2 Nitride semiconductor substrate having a base substrate with parallel trenches
有权
氮化物半导体衬底具有平行沟槽的基底衬底
- Patent Title: Nitride semiconductor substrate having a base substrate with parallel trenches
- Patent Title (中): 氮化物半导体衬底具有平行沟槽的基底衬底
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Application No.: US12002338Application Date: 2007-12-14
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Publication No.: US07915698B2Publication Date: 2011-03-29
- Inventor: Doo-Soo Kim , Ho-Jun Lee , Yong-Jin Kim , Dong-Kun Lee
- Applicant: Doo-Soo Kim , Ho-Jun Lee , Yong-Jin Kim , Dong-Kun Lee
- Applicant Address: KR Gumi
- Assignee: Siltron, Inc.
- Current Assignee: Siltron, Inc.
- Current Assignee Address: KR Gumi
- Agency: Greer, Burns & Crain, Ltd
- Priority: KR10-2006-0129128 20061218
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses on the base substrate that become larger from a central portion of the base substrate towards a peripheral portion when growing a nitride semiconductor film. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.
Public/Granted literature
- US20080142846A1 Nitride semiconductor substrate and manufacturing method thereof Public/Granted day:2008-06-19
Information query
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