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31.发明申请THIN FILM PIEZOELECTRIC BULK ACOUSTIC WAVE RESONATOR AND RADIO FREQUENCY FILTER USING THE SAME 失效薄膜压电体积波形谐振器和无线电频率滤波器公开(公告)号：US20080024042A1
公开(公告)日：2008-01-31
申请号：US11627858
申请日：2007-01-26
IPC分类号： H01L41/047
CPC分类号： H03H9/02228 , H03H3/04 , H03H9/173 , H03H9/175 , H03H9/564 , H03H9/568 , H03H9/605 , H03H2003/0428 , H03H2003/0457 , H03H2003/0471
摘要： An object of the present invention is to provide an inexpensive thin film piezoelectric bulk acoustic wave resonator that allows fine-tuning of a resonant frequency. Another object is to provide an inexpensive filter with dramatically improved frequency characteristics, using thin film piezoelectric bulk acoustic wave resonators that can be formed on one substrate. A thin film piezoelectric bulk acoustic wave resonator of the present invention has a laminated structure including a piezoelectric thin film, and a first metal electrode film and a second metal electrode film between which part of the piezoelectric thin film is sandwiched; the first metal electrode film has a plurality of holes formed on an electrode plane opposite to the second metal electrode film and having a depth equivalent to at least the thickness of the first metal electrode film; and if a combined thickness of top and bottom electrode layers and the piezoelectric thin film is ht, the covering ratio σ of the electrode plane of the first metal electrode film satisfies a condition 0
摘要翻译： 本发明的目的是提供一种廉价的薄膜压电体声波谐振器，其允许谐振频率的微调。 另一个目的是提供一种具有显着改善的频率特性的便宜的滤波器，使用可以在一个基板上形成的薄膜压电体声波谐振器。 本发明的薄膜压电体声波谐振器具有包括压电薄膜和第一金属电极薄膜和第二金属电极薄膜的叠层结构，压电薄膜的一部分夹在其间; 所述第一金属电极膜具有形成在与所述第二金属电极膜相反的电极面上并且具有至少等于所述第一金属电极膜的厚度的深度的多个孔; 并且如果顶部和底部电极层和压电薄膜的组合厚度为ht，则对于每1.28ht间距，第一金属电极膜的电极平面的覆盖比sigma满足条件0 <σ<1。
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公开(公告)号：US07242273B2
公开(公告)日：2007-07-10
申请号：US10902573
申请日：2004-07-30
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , H01H1/20 , H01P1/127
摘要： The MEMS switch comprises a first anchor formed over a substrate, a first spring connected to the first anchor, an upper electrode which is connected to the first spring and makes a motion above the substrate, elastically deforming the first spring, a lower electrode formed over the substrate, positioned under the upper electrode, a second spring connected to the upper electrode, and a second anchor connected to the second spring. When voltage is applied between the upper and lower electrodes and the upper electrode makes a downward motion, the second anchor is brought into contact with the substrate. As a result, the second spring is elastically deformed. When the upper electrode is subsequently brought into contact with the lower electrode, thereby the upper and lower electrodes are electrically connected. The first and second anchors, first and second springs, and upper electrode are formed of identical metal in integral structure.
摘要翻译： MEMS开关包括形成在衬底上的第一锚，连接到第一锚的第一弹簧，连接到第一弹簧并在衬底上方进行运动的上电极，使第一弹簧弹性变形， 位于上电极下方的基板，连接到上电极的第二弹簧和连接到第二弹簧的第二锚固件。 当在上下电极之间施加电压并且上电极向下运动时，使第二锚与基板接触。 结果，第二弹簧弹性变形。 当上电极随后与下电极接触时，上电极和下电极电连接。 第一和第二锚固件，第一和第二弹簧以及上部电极由整体结构相同的金属形成。
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公开(公告)号：US20070120623A1
公开(公告)日：2007-05-31
申请号：US11514229
申请日：2006-09-01
CPC分类号： H03H9/02574 , H03H9/02834
摘要： A surface acoustic wave device in the present invention is provided with a piezoelectric substrate, a supporting substrate being jointed to the piezoelectric substrate and including a material different in expansion coefficient from the piezoelectric substrate and an interdigital electrode for exciting a surface acoustic wave, the electrode being arranged on the surface of the piezoelectric substrate. Either the interdigital electrode or the piezoelectric substrate is configured so that the interdigital electrode is 40% or more to 70% or less as long as the piezoelectric substrate in the direction to which a surface acoustic wave propagates.
摘要翻译： 本发明的声表面波装置具有压电基板，支撑基板与压电基板连接，并且具有与压电基板不同的膨胀系数的材料和用于激励表面声波的叉指电极，所述电极 布置在压电基板的表面上。 叉指电极或压电基板之间的配置使得叉指电极与表面声波传播方向上的压电基片一样长度为40％以上至70％以下。
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34.发明授权Bulk acoustic wave resonator and manufacturing method thereof, filter using the same, semiconductor integrated circuit device using the same, and high frequency module using the same 失效体声波谐振器及其制造方法，使用其的滤波器，使用其的半导体集成电路器件，以及使用其的高频模块公开(公告)号：US07221242B2
公开(公告)日：2007-05-22
申请号：US11067374
申请日：2005-02-28
CPC分类号： H03H3/02 , H03H9/0542 , H03H9/0571 , H03H9/174 , H03H9/564 , H03H9/706
摘要： A bulk acoustic wave resonator in which the problem of the technology for forming the diaphragm structure is resolved, which is more compact and improved the frequency accuracy, and the manufacturing method thereof, a filter using the same, a semiconductor integrated circuit device using the same, and a high frequency module using the same are provided. The bulk acoustic wave resonator according to the present invention comprises a substrate having a first surface and a second surface opposite to the first surface, and a staked resonator including a first electrode film in contact with the first surface, a piezoelectric film overlaying the first electrode film and a second electrode film overlaying the piezoelectric film. The substrate is provided with an air gap including a first aperture opening at the first surface and a second aperture opening at the second surface at the position corresponding to the staked resonator, respectively and having air gap generally vertical shape to the first surface, and another air gap having a tapered shape in the vicinity of the first surface.
摘要翻译： 解决了用于形成隔膜结构的技术的问题的体声波谐振器，其更紧凑并且提高了频率精度，其制造方法，使用该隔膜结构的滤波器，使用该隔膜结构的半导体集成电路器件 ，并且提供使用该模块的高频模块。 根据本发明的体声波谐振器包括具有与第一表面相对的第一表面和第二表面的基板，以及包括与第一表面接触的第一电极膜的支架谐振器，覆盖第一电极的压电膜 膜和覆盖压电膜的第二电极膜。 衬底设置有气隙，该空气间隙包括在第一表面处的第一孔径开口和位于对应于桩状共振器的位置处的第二表面处的第二孔口开口，并且具有大致垂直于第一表面的气隙，另一个 气隙在第一表面附近具有锥形形状。
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公开(公告)号：US20060158283A1
公开(公告)日：2006-07-20
申请号：US11333282
申请日：2006-01-18
IPC分类号： H03H9/54
CPC分类号： H03H9/174 , H03H9/02102 , H03H9/173 , H03H9/178
摘要： A piezoelectric thin film resonator is formed on a base substrate such as made of Si in which the resonance frequency is substantially determined by the lateral size not by the thickness of the resonator, whereby a resonator for use in TCXO, etc. is provided by the thin film technique, which enables to reduce the thickness of the film and the size of the resonator and integration with Si-based IC incorporating the resonator in one identical substrate.
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公开(公告)号：US5242041A
公开(公告)日：1993-09-07
申请号：US730642
申请日：1991-07-16
申请人： Atsushi Isobe
发明人： Atsushi Isobe
CPC分类号： G07F7/04
摘要： An apparatus for currency validation is disclosed in which a belt-pulley arrangement is provided in a housing to transport a bill along a passageway for identification of the bill by sensing the optical or magnetic characteristics of the bill. A lever with notches is mounted for rotation between a protective position protruded within the passageway and a release position retracted from the passageway. When a thin tool is inserted into the passageway, it is engaged with the notches of the lever to prevent movement of the lever from the protective to the release position.
摘要翻译： 公开了一种用于货币验证的装置，其中，皮带轮装置设置在壳体中，以沿着用于通过检测纸币的光学或磁特性的纸币识别的通道来运送纸币。 安装具有凹口的杠杆以在通道内突出的保护位置与从通道缩回的释放位置之间旋转。 当薄的工具插入通道中时，它与杠杆的凹口接合，以防止杠杆从保护装置移动到释放位置。
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公开(公告)号：US5235234A
公开(公告)日：1993-08-10
申请号：US785524
申请日：1991-10-31
IPC分类号： H03H9/145
CPC分类号： H03H9/14502
摘要： A surface acoustic wave device comprises a piezoelectric substrate and a plurality of electrode fingers which are located on the piezoelectric substrate along the propagation direction of a surface acoustic wave. The electrode fingers are located on the piezoelectric substrate at a pitch of about 1.5.lambda.o/2 (where a symbol .lambda.o indicates a wavelength of a surface acoustic wave with a frequency equivalent to the center frequency of the surface acoustic wave device). The width of each of the electrode fingers is about 1.5.lambda.o/4. The electrode fingers are located on the substrate so as to be electrically independent of an external circuit and each other.Since the width of electrode fingers is about 1.5.lambda.o/4, the surface acoustic wave device can be produced without fine processing techniques.
摘要翻译： 表面声波装置包括压电基板和沿着声表面波的传播方向位于压电基板上的多个电极指。 电极指以约1.5λo/ 2的间距位于压电基板上（其中符号λo表示具有与声表面波装置的中心频率相当的频率的表面声波的波长）。 每个电极指的宽度为约1.5λo / 4。 电极指位于基板上，以便与外部电路彼此电独立。 由于电极指的宽度为约1.5λo / 4，所以可以在没有精细加工技术的情况下制造表面声波装置。
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公开(公告)号：US5065065A
公开(公告)日：1991-11-12
申请号：US526508
申请日：1990-05-21
IPC分类号： H03H9/145
CPC分类号： H03H9/14502
摘要： A surface acoustic wave device comprises a piezoelectric substrate and a plurality of electrode fingers which are located on the piezoelectric substrate along the progagation direction of a surface acoustic wave. The electrode fingers are located on the piezoelectric substrate at a pitch of about 1.5.lambda.o/2 (where a symbol .lambda.o indicates a wavelength of a surface acoustic wave with a frequency equivalent to the center frequency of the surface acoustic wave device). The width of each of the electrode fingers is about 1.5.lambda.o/4. The electrode fingers are located on the substrate so as to be electrically independent of an external circuit and each other.Since the width of electrode fingers is about 1.5.lambda.o/4, the surface acoustic wave device can be produced without fine processing techniques.
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公开(公告)号：US06879488B2
公开(公告)日：2005-04-12
申请号：US10302813
申请日：2002-11-25
申请人： Eriko Takeda , Atsushi Isobe , Satoshi Tanaka , Hiroshi Okabe
发明人： Eriko Takeda , Atsushi Isobe , Satoshi Tanaka , Hiroshi Okabe
IPC分类号： H01L23/12 , H01L23/34 , H01L23/367 , H01L25/04 , H01L25/18 , H05K1/00 , H05K1/02 , H05K1/03 , H05H7/20
CPC分类号： H01L23/345 , H01L23/3677 , H01L24/73 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/15153 , H01L2924/15313 , H01L2924/16251 , H01L2924/19105 , H05K1/0201 , H05K1/0206 , H05K1/0298 , H05K1/0306 , H05K2201/062 , H01L2924/00012
摘要： In a compact radio frequency module, a first chip forms a heater element and a second chip forms a device whose operating characteristics vary with temperature change or whose maximum operating temperature is lower than the maximum operating temperature of the first chip. A multilayer substrate has a plurality of dielectric layers and a plurality of conductor layers and mechanically supports the firs chip and the second chip with some of the conductor layers electrically connected with these chips. The module can conduct the heat generated by the first chip throughout the module; guide the heat generated by the first chip from the module's top face side to its bottom face side; and interrupt the heat conduction from the first conductor pattern on which the first chip is placed to the second conductor pattern on which the second chip is placed.
摘要翻译： 在紧凑型射频模块中，第一芯片形成加热元件，第二芯片形成其工作特性随温度变化而变化或其最大工作温度低于第一芯片的最大工作温度的器件。 多层基板具有多个电介质层和多个导体层，并机械地支撑第一芯片和第二芯片，其中一些导体层与这些芯片电连接。 该模块可以在整个模块中传导第一芯片产生的热量; 将第一芯片产生的热量从模块的顶面引导到其底面; 并且将来自第一芯片的第一导体图案的热传导中断到放置第二芯片的第二导体图案。
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公开(公告)号：US5372361A
公开(公告)日：1994-12-13
申请号：US152294
申请日：1993-11-15
申请人： Atsushi Isobe , Masanobu Fujita , Taichi Sato , Takayuki Takeda
发明人： Atsushi Isobe , Masanobu Fujita , Taichi Sato , Takayuki Takeda
CPC分类号： G07F19/202 , B65H29/46 , B65H31/00 , G07D11/0012 , G07D11/0081 , B65H2701/1912
摘要： A casing of a stacker is provided with an opening and a chamber for disposing a pusher within the casing adjacent to the opening so that the pusher can be removably attached within the stacker. Also provided in the pusher is a slit-shaped inlet connected with an exit of a passageway within a transporter. By removing the pusher from the stacker and attaching same to another stacker having its compartment of different capacity, bill storing capacity may easily be changed. In malfunction of the pusher, it may easily be exchanged with new one for easy maintenance.
摘要翻译： 堆垛机的壳体设置有开口和室，用于将推动器设置在与开口相邻的壳体内，使得推动器可拆卸地附接在堆垛机内。 在推动器中还设置有与输送器内的通道的出口连接的狭缝状入口。 通过从堆垛机移除推动器并将其连接到具有不同容量的隔间的另一堆垛机，可以容易地改变纸币存储容量。 在推动器出现故障时，可以轻松更换新的，便于维护。
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