公开(公告)号：US08686442B2

公开(公告)日：2014-04-01

申请号：US13478024

申请日：2012-05-22

申请人： Akihisa Terano ,  Aki Takei

发明人： Akihisa Terano ,  Aki Takei

IPC分类号： H01L27/15 ,  H01L29/26

CPC分类号： H01L33/40 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/34333

摘要： The present invention provides a nitride semiconductor light emitting device having an n-electrode that has an Au face excellent in ohmic contacts to an n-type nitride semiconductor and excellent in mounting properties, and a method of manufacturing the same. The nitride semiconductor light emitting device uses an n-electrode having a three-layer laminate structure that is composed of a first layer containing aluminum nitride and having a thickness not less than 1 nm or less than 5 nm, a second layer containing one or more metals selected from Ti, Zr, Hf, Mo, and Pt, and a third layer made of Au, from the near side of the n-type nitride semiconductor in order of mention. The n-electrode thus formed is then annealed to obtain ohmic contacts to the n-type nitride semiconductor.

摘要翻译： 本发明提供一种氮化物半导体发光器件及其制造方法，该氮化物半导体发光器件具有与n型氮化物半导体的欧姆接触性优异的Au面的n电极，并且其安装性能优异。 氮化物半导体发光器件使用具有由具有不小于1nm或小于5nm的厚度的氮化铝的第一层组成的三层层压结构的n电极，包含一个或多个 选自Ti，Zr，Hf，Mo和Pt的金属以及由Au制成的第三层，从n型氮化物半导体的近侧依次提到。 然后将由此形成的n电极退火以获得与n型氮化物半导体的欧姆接触。

公开(公告)号：US08476731B2

公开(公告)日：2013-07-02

申请号：US13349959

申请日：2012-01-13

申请人： Akihisa Terano ,  Kazuhiro Mochizuki ,  Takashi Ishigaki

发明人： Akihisa Terano ,  Kazuhiro Mochizuki ,  Takashi Ishigaki

IPC分类号： H01L29/47 ,  H01L29/40

CPC分类号： H01L29/872 ,  H01L29/0649 ,  H01L29/2003

摘要： In a Schottky electrode formation region on a nitride semiconductor, the total length of junctions of Schottky electrodes and a surface of a nitride semiconductor layer is longer than the perimeter of the Schottky electrode formation region. The total length is preferably 10 times longer than the perimeter. For example, the Schottky electrodes are formed concentrically and circularly.

摘要翻译： 在氮化物半导体上的肖特基电极形成区域中，肖特基电极和氮化物半导体层的表面的总长度比肖特基电极形成区域的周长长。 总长度优选比周长长10倍。 例如，肖特基电极同心圆形地形成。

公开(公告)号：US08124432B2

公开(公告)日：2012-02-28

申请号：US12630008

申请日：2009-12-03

申请人： Tomonobu Tsuchiya ,  Shigehisa Tanaka ,  Akihisa Terano ,  Kouji Nakahara

发明人： Tomonobu Tsuchiya ,  Shigehisa Tanaka ,  Akihisa Terano ,  Kouji Nakahara

IPC分类号： H01L21/205 ,  H01L31/18 ,  H01S5/22 ,  H01S5/343

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/0075 ,  H01S5/2009 ,  H01S5/3213 ,  H01S5/3215 ,  H01S5/3407

摘要： In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In (Indium) segregation and deterioration of crystallinity. In the manufacture of an InGaN-based nitride semiconductor optical device having an InGaN-based quantum well active layer including an InGaN well layer and an InGaN barrier layer, a step of growing the InGaN barrier layer includes: a first step of adding hydrogen at 1% or more to a gas atmosphere composed of nitrogen and ammonia and growing a GaN layer in the gas atmosphere; and a second step of growing the InGaN barrier layer in a gas atmosphere composed of nitrogen and ammonia.

摘要翻译： 在具有等于或大于蓝色的长波长（440nm或更大）的InGaN基氮化物半导体光学器件中，在抑制In（铟）偏析和结晶度劣化的同时实现波长的增加。 在制造具有包括InGaN阱层和InGaN阻挡层的InGaN基量子阱有源层的InGaN基氮化物半导体光学器件中，生长InGaN势垒层的步骤包括：第一步骤，在1 ％以上，由氮和氨组成的气体气氛，并在气体气氛中生长GaN层; 以及在由氮和氨组成的气体气氛中生长InGaN势垒层的第二步骤。

公开(公告)号：US07822088B2

公开(公告)日：2010-10-26

申请号：US12216817

申请日：2008-07-11

申请人： Akihisa Terano ,  Tomonobu Tsuchiya

发明人： Akihisa Terano ,  Tomonobu Tsuchiya

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/025 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0213 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3216

摘要： A nitride semiconductor light emitting device operating on a low voltage and excelling in reliability and performance is to be provided. It has a multi-layered p-type clad layer of at least two layers of a first p-type clad layer and a second p-type clad layer, wherein the second p-type clad layer contains a p-type impurity in a higher concentration the first p-type clad layer does, has a thickness ranging from 2 to 20 nm, and is formed of AlYGa1-YN whose Al content has a relationship of X≦Y to the first p-type clad layer doped with a p-type impurity containing at least an AlXGa1-XN (0

摘要翻译： 将提供一种在低电压下操作并具有优异的可靠性和性能的氮化物半导体发光器件。 它具有第一p型覆盖层和第二p型覆盖层的至少两层的多层p型覆盖层，其中第二p型覆盖层含有较高的p型杂质 浓度为第一p型覆盖层的厚度范围为2至20nm，并且Al Al Ga 1-Y N由Al Y Ga 1-Y N形成，其Al含量与掺杂p型覆层的第一p型覆盖层具有X＆ 至少含有Al x Ga 1-x N（0

公开(公告)号：US20120223337A1

公开(公告)日：2012-09-06

申请号：US13349959

申请日：2012-01-13

申请人： Akihisa TERANO ,  Kazuhiro MOCHIZUKI ,  Takashi ISHIGAKI

发明人： Akihisa TERANO ,  Kazuhiro MOCHIZUKI ,  Takashi ISHIGAKI

IPC分类号： H01L29/16 ,  H01L29/20

CPC分类号： H01L29/872 ,  H01L29/0649 ,  H01L29/2003

摘要： In a Schottky electrode formation region on a nitride semiconductor, the total length of junctions of Schottky electrodes and a surface of a nitride semiconductor layer is longer than the perimeter of the Schottky electrode formation region. The total length is preferably 10 times longer than the perimeter. For example, the Schottky electrodes are formed concentrically and circularly.

摘要翻译： 在氮化物半导体上的肖特基电极形成区域中，肖特基电极和氮化物半导体层的表面的总长度比肖特基电极形成区域的周长长。 总长度优选比周长长10倍。 例如，肖特基电极同心圆形地形成。

公开(公告)号：US07738521B2

公开(公告)日：2010-06-15

申请号：US11606186

申请日：2006-11-30

申请人： Shin'ichi Nakatsuka ,  Tsukuru Ohtoshi ,  Kazunori Shinoda ,  Akihisa Terano ,  Hitoshi Nakamura ,  Shigehisa Tanaka

发明人： Shin'ichi Nakatsuka ,  Tsukuru Ohtoshi ,  Kazunori Shinoda ,  Akihisa Terano ,  Hitoshi Nakamura ,  Shigehisa Tanaka

IPC分类号： H01S3/04 ,  H01S5/00

CPC分类号： H01S5/2231 ,  B82Y20/00 ,  H01S5/0421 ,  H01S5/18308 ,  H01S5/18369 ,  H01S5/2009 ,  H01S5/221 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3216 ,  H01S5/34333

摘要： A super-lattice structure is used for a portion of a laser device of a self-aligned structure to lower the resistance of the device by utilizing the extension of electric current in the layer, paying attention to the fact that the lateral conduction of high density doping in the super-lattice structure is effective for decreasing the resistance of the laser, in order to lower the operation voltage and increase the power in nitride type wide gap semiconductor devices in which crystals with high carrier density are difficult to obtain and the device resistance is high.

摘要翻译： 超晶格结构用于自对准结构的激光器件的一部分，通过利用层中的电流的延伸来降低​​器件的电阻，注意高密度的横向传导的事实 在超晶格结构中的掺杂对于降低激光器的电阻是有效的，以便降低操作电压并增加难以获得具有高载流子密度的晶体的氮化物型宽间隙半导体器件的功率，并且器件电阻 高。

公开(公告)号：US07596160B2

公开(公告)日：2009-09-29

申请号：US11841010

申请日：2007-08-20

申请人： Tomonobu Tsuchiya ,  Shigehisa Tanaka ,  Akihisa Terano

发明人： Tomonobu Tsuchiya ,  Shigehisa Tanaka ,  Akihisa Terano

IPC分类号： H01S5/323 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/0021 ,  H01S5/0202 ,  H01S5/2201 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2304/04

摘要： A nitride semiconductor laser which features low resistance and high reliability. A buried layer is formed by selective growth and the shape of a p-type cladding layer is inverted trapezoidal so that the resistance of the p-type cladding layer and that of a p-type contact layer are decreased. For long-term reliability of the laser, the buried layer is a high-resistance semi-insulating layer which suppresses increase in leak current.

摘要翻译： 具有低电阻和高可靠性的氮化物半导体激光器。 通过选择性生长形成掩埋层，并且p型包覆层的形状被倒梯形，使得p型覆层和p型接触层的电阻降低。 为了激光器的长期可靠性，埋层是一种高电阻半绝缘层，可以抑制漏电流的增加。

公开(公告)号：US20070224715A1

公开(公告)日：2007-09-27

申请号：US11492924

申请日：2006-07-26

申请人： Akihisa Terano ,  Shigehisa Tanaka

发明人： Akihisa Terano ,  Shigehisa Tanaka

IPC分类号： H01L21/00

CPC分类号： H01L33/0095 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2304/00

摘要： An object of the present invention is to provide a nitride semiconductor based light-emitting device, which is low in operating voltage reduction and is high in performance, and a manufacturing method thereof.A first metal film is formed on a P-type conductive nitride semiconductor formed on a substrate, and then, a film (WOX) made of tungsten oxide is formed in superimposition, followed by annealing.

摘要翻译： 本发明的目的是提供一种氮化物半导体的发光器件及其制造方法，该发光器件的工作电压降低低，性能高。 在形成在基板上的P型导电氮化物半导体上形成第一金属膜，然后叠加形成由氧化钨制成的膜（WO 001），然后进行退火。

公开(公告)号：US07242273B2

公开(公告)日：2007-07-10

申请号：US10902573

申请日：2004-07-30

申请人： Atsushi Isobe ,  Akihisa Terano ,  Kengo Asai ,  Hiroyuki Uchiyama ,  Hisanori Matsumoto

发明人： Atsushi Isobe ,  Akihisa Terano ,  Kengo Asai ,  Hiroyuki Uchiyama ,  Hisanori Matsumoto

IPC分类号： H01H51/22

CPC分类号： H01H59/0009 ,  H01H1/20 ,  H01P1/127

摘要： The MEMS switch comprises a first anchor formed over a substrate, a first spring connected to the first anchor, an upper electrode which is connected to the first spring and makes a motion above the substrate, elastically deforming the first spring, a lower electrode formed over the substrate, positioned under the upper electrode, a second spring connected to the upper electrode, and a second anchor connected to the second spring. When voltage is applied between the upper and lower electrodes and the upper electrode makes a downward motion, the second anchor is brought into contact with the substrate. As a result, the second spring is elastically deformed. When the upper electrode is subsequently brought into contact with the lower electrode, thereby the upper and lower electrodes are electrically connected. The first and second anchors, first and second springs, and upper electrode are formed of identical metal in integral structure.

摘要翻译： MEMS开关包括形成在衬底上的第一锚，连接到第一锚的第一弹簧，连接到第一弹簧并在衬底上方进行运动的上电极，使第一弹簧弹性变形， 位于上电极下方的基板，连接到上电极的第二弹簧和连接到第二弹簧的第二锚固件。 当在上下电极之间施加电压并且上电极向下运动时，使第二锚与基板接触。 结果，第二弹簧弹性变形。 当上电极随后与下电极接触时，上电极和下电极电连接。 第一和第二锚固件，第一和第二弹簧以及上部电极由整体结构相同的金属形成。

公开(公告)号：US20120228664A1

公开(公告)日：2012-09-13

申请号：US13478024

申请日：2012-05-22

申请人： Akihisa TERANO ,  Aki Takei

发明人： Akihisa TERANO ,  Aki Takei

IPC分类号： H01L33/40

CPC分类号： H01L33/40 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/34333

摘要： The present invention provides a nitride semiconductor light emitting device having an n-electrode that has an Au face excellent in ohmic contacts to an n-type nitride semiconductor and excellent in mounting properties, and a method of manufacturing the same. The nitride semiconductor light emitting device uses an n-electrode having a three-layer laminate structure that is composed of a first layer containing aluminum nitride and having a thickness not less than 1 nm or less than 5 nm, a second layer containing one or more metals selected from Ti, Zr, Hf, Mo, and Pt, and a third layer made of Au, from the near side of the n-type nitride semiconductor in order of mention. The n-electrode thus formed is then annealed to obtain ohmic contacts to the n-type nitride semiconductor.

摘要翻译： 本发明提供一种氮化物半导体发光器件及其制造方法，该氮化物半导体发光器件具有与n型氮化物半导体的欧姆接触性优异的Au面的n电极，并且其安装性能优异。 氮化物半导体发光器件使用具有由具有不小于1nm或小于5nm的厚度的氮化铝的第一层组成的三层层压结构的n电极，包含一个或多个 选自Ti，Zr，Hf，Mo和Pt的金属以及由Au制成的第三层，从n型氮化物半导体的近侧依次提到。 然后将由此形成的n电极退火以获得与n型氮化物半导体的欧姆接触。