- 专利标题: Surface acoustic wave device
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申请号: US526508申请日: 1990-05-21
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公开(公告)号: US5065065A公开(公告)日: 1991-11-12
- 发明人: Mitsutaka Hikita , Toyoji Tabuchi , Nobuhiko Shibagaki , Atsushi Isobe , Kazuhito Kurosawa
- 申请人: Mitsutaka Hikita , Toyoji Tabuchi , Nobuhiko Shibagaki , Atsushi Isobe , Kazuhito Kurosawa
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX1-131354 19890526
- 主分类号: H03H9/145
- IPC分类号: H03H9/145
摘要:
A surface acoustic wave device comprises a piezoelectric substrate and a plurality of electrode fingers which are located on the piezoelectric substrate along the progagation direction of a surface acoustic wave. The electrode fingers are located on the piezoelectric substrate at a pitch of about 1.5.lambda.o/2 (where a symbol .lambda.o indicates a wavelength of a surface acoustic wave with a frequency equivalent to the center frequency of the surface acoustic wave device). The width of each of the electrode fingers is about 1.5.lambda.o/4. The electrode fingers are located on the substrate so as to be electrically independent of an external circuit and each other.Since the width of electrode fingers is about 1.5.lambda.o/4, the surface acoustic wave device can be produced without fine processing techniques.
公开/授权文献
- US5747835A Serial arrangement of photothyristors 公开/授权日:1998-05-05
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