发明授权
- 专利标题: Surface acoustic wave device
- 专利标题(中): 表面声波装置
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申请号: US785524申请日: 1991-10-31
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公开(公告)号: US5235234A公开(公告)日: 1993-08-10
- 发明人: Mitsutaka Hikita , Toyoji Tabuchi , Nobuhiko Shibagaki , Atsushi Isobe , Kazuhito Kurosawa
- 申请人: Mitsutaka Hikita , Toyoji Tabuchi , Nobuhiko Shibagaki , Atsushi Isobe , Kazuhito Kurosawa
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 主分类号: H03H9/145
- IPC分类号: H03H9/145
摘要:
A surface acoustic wave device comprises a piezoelectric substrate and a plurality of electrode fingers which are located on the piezoelectric substrate along the propagation direction of a surface acoustic wave. The electrode fingers are located on the piezoelectric substrate at a pitch of about 1.5.lambda.o/2 (where a symbol .lambda.o indicates a wavelength of a surface acoustic wave with a frequency equivalent to the center frequency of the surface acoustic wave device). The width of each of the electrode fingers is about 1.5.lambda.o/4. The electrode fingers are located on the substrate so as to be electrically independent of an external circuit and each other.Since the width of electrode fingers is about 1.5.lambda.o/4, the surface acoustic wave device can be produced without fine processing techniques.
公开/授权文献
- US5790665A Anonymous information retrieval system (ARS) 公开/授权日:1998-08-04
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