公开(公告)号：US11456152B2

公开(公告)日：2022-09-27

申请号：US16705158

申请日：2019-12-05

Applicant: Applied Materials, Inc.

Inventor： Joseph C. Olson ,  Morgan Evans ,  Rutger Meyer Timmerman Thijssen

IPC: H01J37/305 ,  H01J37/12 ,  G02B6/136 ,  H01J37/147 ,  H01J37/20 ,  G02B6/12

Abstract: Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ϑ relative to a surface normal of the substrates and form gratings in the grating material.

公开(公告)号：US11247298B2

公开(公告)日：2022-02-15

申请号：US16716997

申请日：2019-12-17

Applicant: Applied Materials, Inc.

Inventor： Morgan Evans ,  Joseph C. Olson ,  Rutger Meyer Timmerman Thijssen

IPC: G02B5/18 ,  B23K26/34 ,  C04B41/00 ,  G02B6/34 ,  G03F7/00 ,  F21V8/00 ,  G06F3/01

Abstract: Embodiments of the present application generally relate to methods for forming a plurality of gratings. The methods generally include depositing a material over one or more protected regions of a waveguide combiner disposed on a substrate, the material having a thickness inhibiting removal of a grating material disposed on the waveguide combiner when an ion beam is directed toward the substrate, and directing the ion beam toward the substrate. The methods disclosed herein allow for formation of a plurality of gratings in one or more unprotected regions, while no gratings are formed in the protected regions.

公开(公告)号：US11232930B2

公开(公告)日：2022-01-25

申请号：US17212307

申请日：2021-03-25

Applicant: APPLIED Materials, Inc.

Inventor： Morgan Evans ,  Charles T. Carlson ,  Rutger Meyer Timmerman Thijssen ,  Ross Bandy ,  Ryan Magee

IPC: H01J37/305 ,  G02B5/18 ,  H01L21/3065 ,  H01L21/308 ,  B81C1/00

Abstract: A carrier proximity mask and methods of assembling and using the carrier proximity mask may include providing a first carrier body, second carrier body, and set of one or more clamps. The first carrier body may have one or more openings formed as proximity masks to form structures on a first side of a substrate. The first and second carrier bodies may have one or more contact areas to align with one or more contact areas on a first and second sides of the substrate. The set of one or more clamps may clamp the substrate between the first carrier body and the second carrier body at contact areas to suspend work areas of the substrate between the first and second carrier bodies. The openings to define edges to convolve beams to form structures on the substrate.

公开(公告)号：US10903211B1

公开(公告)日：2021-01-26

申请号：US16542658

申请日：2019-08-16

Applicant: APPLIED Materials, Inc.

Inventor： Anthony Renau ,  Min Gyu Sung ,  Sony Varghese ,  Morgan Evans ,  Naushad K. Variam ,  Tassie Andersen

IPC: H01L27/08 ,  H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66

Abstract: The present disclosure is directed to structures and processing for three-dimensional transistor devices. In some approaches, a method may include providing a plurality of fin structures formed from a substrate, the plurality of fin structures disposed subjacent to a hard mask layer, and directing angled ions at the plurality of fin structures. The angled ions may form a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate, wherein the angled ions etch the plurality of fin structures to form a stack of isolated nanowires within the plurality of fin structures. The method may further include removing the hard mask layer, and forming a stopping layer over the stack of isolated nanowires.

公开(公告)号：US10690821B1

公开(公告)日：2020-06-23

申请号：US16297981

申请日：2019-03-11

Applicant: APPLIED Materials, Inc.

Inventor： Morgan Evans ,  Rutger Meyer Timmerman Thijssen ,  Megan Clark

IPC: G02B5/18 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/3213 ,  H01J37/305 ,  H01L21/311

Abstract: Methods of producing gratings with trenches having variable height and width are provided. In one example, a method includes providing an optical grating layer atop a substrate, and providing a patterned hardmask over the optical grating layer. The method may include forming a mask over just a portion of the optical grating layer and the patterned hardmask, and etching a plurality of trenches into the optical grating layer to form an optical grating. After trench formation, at least one of the following grating characteristics varies between one or more trenches of the plurality of trenches: a trench depth and a trench width.

公开(公告)号：US11852853B2

公开(公告)日：2023-12-26

申请号：US17147338

申请日：2021-01-12

Applicant: Applied Materials, Inc.

Inventor： Rutger Meyer Timmerman Thijssen ,  Morgan Evans ,  Maurice Emerson Peploski ,  Joseph C. Olson ,  Thomas James Soldi

IPC: G02B5/18 ,  H01J37/305

CPC classification number: G02B5/1857 ,  H01J37/3056

Abstract: A method is provided. The method includes exposing a first material disposed across a first plane on a first substrate to an ion beam to form a first plurality of structures in the first material, the ion beam directed at the first material at an ion beam angle ϑ relative to a surface normal of the first substrate. The first substrate is positioned at a first rotation angle ϕ1 between the ion beam and a first vector of the first plurality of structures, the first material is exposed to the ion beam incrementally along a first direction, and exposure of the first material to the ion beam is varied along the first direction to generate a depth variation between the first plurality of structures in the first direction.

公开(公告)号：US11766744B2

公开(公告)日：2023-09-26

申请号：US17650814

申请日：2022-02-11

Applicant: Applied Materials, Inc.

Inventor： Morgan Evans ,  Joseph C. Olson ,  Rutger Meyer Timmerman Thijssen

IPC: G02B5/18 ,  B23K26/34 ,  C04B41/00 ,  G02B6/34 ,  G03F7/00 ,  B23K26/364 ,  F21V8/00 ,  G06F3/01

CPC classification number: B23K26/34 ,  B23K26/364 ,  C04B41/0036 ,  G02B5/1819 ,  G02B5/1857 ,  G02B6/34 ,  G03F7/0005 ,  G02B6/0016 ,  G02B6/0065 ,  G06F3/011

Abstract: Embodiments of the present application generally relate to methods for forming a plurality of gratings. The methods generally include depositing a material over one or more protected regions of a waveguide combiner disposed on a substrate, the material having a thickness inhibiting removal of a grating material disposed on the waveguide combiner when an ion beam is directed toward the substrate, and directing the ion beam toward the substrate. The methods disclosed herein allow for formation of a plurality of gratings in one or more unprotected regions, while no gratings are formed in the protected regions.

公开(公告)号：US11662524B2

公开(公告)日：2023-05-30

申请号：US16818457

申请日：2020-03-13

Applicant: Applied Materials, Inc.

Inventor： Peter Kurunczi ,  Joseph Olson ,  Morgan Evans ,  Rutger Meyer Timmerman Thijssen

IPC: G02B6/34 ,  G03F7/09 ,  G03F7/00 ,  B29C33/38

CPC classification number: G02B6/34 ,  G03F7/0005 ,  G03F7/094 ,  B29C33/3842 ,  G02B2207/101 ,  G03F7/0002

Abstract: A method for forming a device structure is disclosed. The method of forming a device structure includes forming a variable-depth structure in a device material layer using a laser ablation. A plurality of device structures is formed in the variable-depth structure to define slanted device structures therein. The variable-depth structure and the slanted device structures are formed using an etch process.

公开(公告)号：US11554445B2

公开(公告)日：2023-01-17

申请号：US16694580

申请日：2019-11-25

Applicant: Applied Materials, Inc.

Inventor： Morgan Evans ,  Joseph C. Olson

IPC: B23K26/34 ,  C04B41/00 ,  G02B5/18 ,  G03F7/00 ,  B23K26/364 ,  G02B6/34 ,  F21V8/00 ,  G06F3/01

Abstract: Embodiments of the present disclosure relate to methods for controlling etch depth by providing localized heating across a substrate. The method for controlling temperatures across the substrate can include individually controlling a plurality of heating pixels disposed in a dielectric body of a substrate support assembly. The plurality of heating pixels provide temperature distributions on a first surface of the substrate disposed on a support surface of the dielectric body. The temperature distributions correspond to a plurality of portions of at least one grating on a second surface of the substrate to be exposed to an ion beam. Additionally, the temperatures can be controlled by individually controlling light emitting diodes (LEDs) of LED arrays. The substrate is exposed to the ion beam to form a plurality of fins on the at least one grating. The at least one grating has a distribution of depths corresponding to the temperature distributions.

公开(公告)号：US11456205B2

公开(公告)日：2022-09-27

申请号：US16871751

申请日：2020-05-11

Applicant: Applied Materials, Inc.

Inventor： Morgan Evans ,  Joseph C. Olson ,  Rutger Meyer Timmerman Thijssen ,  Daniel Distaso ,  Ryan Boas

IPC: H01L21/768 ,  G03F7/20

Abstract: Methods of producing grating materials with variable height fins are provided. In one example, a method may include providing a mask layer atop a substrate, the mask layer including a first opening over a first processing area and a second opening over a second processing area. The method may further include etching the substrate to recess the first and second processing areas, forming a grating material over the substrate, and etching the grating material in the first and second processing areas to form a plurality of structures oriented at a non-zero angle with respect to a vertical extending from a top surface of the substrate.