公开(公告)号：US20230071168A1

公开(公告)日：2023-03-09

申请号：US17891044

申请日：2022-08-18

Applicant: Applied Materials, Inc.

Inventor： Kartik RAMASWAMY ,  Yang YANG ,  Yue GUO

IPC: H01J37/32

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. Embodiments of the disclosure include an apparatus and method for generating a pseudo-staircase waveform that includes coupling, during a first phase of generating a waveform, a first voltage supply to an output node; coupling, during a second phase of generating the waveform, a first capacitor between the output node and an electrical ground node; and coupling during a third phase of generating the waveform, the first capacitor and a second capacitor in a series path between the output node and the electrical ground node.

公开(公告)号：US20230067046A1

公开(公告)日：2023-03-02

申请号：US18047006

申请日：2022-10-17

Applicant: Applied Materials, Inc.

Inventor： Kartik RAMASWAMY ,  Yang YANG ,  Yue GUO

IPC: H01J37/32 ,  H03K3/57

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having a voltage source circuitry, a first switch coupled between the voltage source circuitry and a first output node of the waveform generator, the first output node being configured to be coupled to a chamber, and a second switch coupled between the first output node and electrical ground node. The waveform generator also includes a third switch coupled between the voltage source circuitry and a second output node of the waveform generator, the second output node being configured to be coupled to the chamber, and a fourth switch coupled between the second output node and the electrical ground node.

公开(公告)号：US20220392750A1

公开(公告)日：2022-12-08

申请号：US17337146

申请日：2021-06-02

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Yue GUO ,  Kartik RAMASWAMY

IPC: H01J37/32 ,  H03H7/01

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having a voltage source selectively coupled to an output node, where the output node is configured to be coupled to an electrode disposed within a processing chamber, and where the output node is selectively coupled to a ground node. The waveform generator may also include a radio frequency (RF) signal generator, and a first filter coupled between the RF signal generator and the output node.

公开(公告)号：US20220293397A1

公开(公告)日：2022-09-15

申请号：US17198141

申请日：2021-03-10

Applicant: Applied Materials, Inc.

Inventor： Michael R. RICE ,  Kenneth S. COLLINS ,  James David CARDUCCI ,  Shahid RAUF ,  Kartik RAMASWAMY

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: Embodiments of substrates supports for use in process chambers are provided herein. In some embodiments, a substrate support includes: a dielectric plate having a first side configured to support a substrate having a given diameter and including an annular groove disposed in the first side, wherein the annular groove has an inner diameter that is less than the given diameter and an outer diameter that is greater than the given diameter, wherein the dielectric plate includes a chucking electrode; an insert ring disposed in the annular groove of the dielectric plate; and an edge ring disposed on the dielectric plate, wherein the edge ring has an inner diameter that is greater than the given diameter and less than the outer diameter of the annular groove such that the edge ring is disposed over a portion of the insert ring.

公开(公告)号：US20220130642A1

公开(公告)日：2022-04-28

申请号：US17078728

申请日：2020-10-23

Applicant: APPLIED MATERIALS, INC.

Inventor： Katsumasa KAWASAKI ,  Kartik RAMASWAMY ,  Yue GUO ,  Chunlei ZHANG ,  Sergio Fukuda SHOJI ,  Jorge ZANINOVICH ,  Smbat KARTASHYAN

IPC: H01J37/32 ,  H01J37/244 ,  G01R25/02

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, apparatus can include a first voltage/current (V/I) probe configured to connect to an input side of a matching network of the processing chamber and a second V/I probe configured to connect to an output side of the matching network and a processor coupled to the first V/I probe and the second V/I probe and configured to, based on a phase gap between a V and I of an RF signal detected by at least one of the first V/I probe or the second V/I probe at a target frequency, detect a minimum phase gap between the V and I, and control at least one of impedance tuning of the matching network or process control of the processing chamber using at least one of a peak or RMS of V, I and phase measured at the target frequency or under sweeping frequency.

公开(公告)号：US20210066036A1

公开(公告)日：2021-03-04

申请号：US17080802

申请日：2020-10-26

Applicant: Applied Materials, Inc.

Inventor： Ludovic GODET ,  Rutger MEYER TIMMERMAN THIJSSEN ,  Kartik RAMASWAMY ,  Yang YANG ,  Manivannan THOTHADRI ,  Chien-An CHEN

IPC: H01J37/305 ,  H01J37/32 ,  H01J37/073 ,  G02B6/13 ,  H01J37/147 ,  H01L21/3065 ,  G02B5/18

Abstract: Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

公开(公告)号：US20200006036A1

公开(公告)日：2020-01-02

申请号：US16391263

申请日：2019-04-22

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Yang YANG ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN

IPC: H01J37/305 ,  H01J37/32 ,  H01L21/3065

Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam etching process. In one embodiment, a method of etching a substrate includes delivering a process gas to a process volume of a process chamber, applying a RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume, generating a plasma comprising ions in the process volume, bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam, applying a negative DC power to the electrode, accelerating electrons emitted from the bombarded electrode toward a substrate disposed in the process chamber, and etching the substrate with the accelerated ions.

公开(公告)号：US20190057840A1

公开(公告)日：2019-02-21

申请号：US16107844

申请日：2018-08-21

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. COLLINS ,  Michael R. RICE ,  Kartik RAMASWAMY ,  James D. CARDUCCI ,  Yue GUO ,  Olga REGELMAN

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/3211 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32568

Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.

公开(公告)号：US20190018322A1

公开(公告)日：2019-01-17

申请号：US16138142

申请日：2018-09-21

Applicant: Applied Materials, Inc.

Inventor： Kartik RAMASWAMY ,  Srinivas D. NEMANI

IPC: G03F7/20 ,  G03F7/26

Abstract: A method and apparatus disclosed herein apply to processing a substrate, and more specifically to a method and apparatus for improving photolithography processes. The apparatus includes a chamber body, a substrate support disposed within the chamber body, and an electrode assembly. The substrate support has a top plate disposed above the substrate support, a bottom plate disposed below the substrate support, and a plurality of electrodes connecting the top plate to the bottom plate. A voltage is applied to the plurality of electrodes to generate an electric field. Methods for exposing a photoresist layer on a substrate to an electric field are also disclosed herein.

公开(公告)号：US20170101713A1

公开(公告)日：2017-04-13

申请号：US15219758

申请日：2016-07-26

Applicant: Applied Materials, Inc.

Inventor： Haitao WANG ,  Hamid NOORBAKHSH ,  Chunlei ZHANG ,  Sergio Fukuda SHOJI ,  Kartik RAMASWAMY ,  Roland SMITH ,  Brad L. MAYS

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/4401 ,  H01J37/3244

Abstract: Embodiments of the present disclosure relate to a showerhead assembly for use in a processing chamber. The showerhead assembly includes a porous insert disposed in a space defined between a gas distribution plate and a base plate to moderate the corrosive radicals resulting from plasma ignition to reduce particle issues and metal contamination in the chamber. The porous insert is a conductive material, such as metal, used to reduce the gap electrical field strength, or may be a dielectric material such as ceramic, polytetrafluoroethylene, polyamide-imide, or other materials with a low dielectric loss and high electrical field strength under conditions of high frequency and strong electric fields. As such, the electrical breakdown threshold is enhanced. The porous insert may reduce and/or eliminate showerhead backside plasma ignition and may include multiple concentric narrow rings that cover gas holes of the gas distribution plate.