公开(公告)号：US20090163014A1

公开(公告)日：2009-06-25

申请号：US12139623

申请日：2008-06-16

申请人： Ki Hong Lee ,  Seung Ho Pyi ,  Ki Seon Park

发明人： Ki Hong Lee ,  Seung Ho Pyi ,  Ki Seon Park

IPC分类号： H01L21/28

CPC分类号： H01L21/28282 ,  H01L21/3105 ,  H01L21/31608 ,  H01L21/31616

摘要： A method for fabricating a non-volatile memory device with a charge trapping layer wherein a tunneling layer, a charge trapping layer, a blocking layer, and a control gate electrode are formed on a semiconductor substrate. A temperature of the control gate electrode is increased by applying a magnetic field to the control gate electrode. The blocking layer is densified by allowing the increased temperature to be transferred to the blocking layer contacting the control gate electrode.

摘要翻译： 一种用于制造具有电荷捕获层的非易失性存储器件的方法，其中在半导体衬底上形成有隧道层，电荷俘获层，阻挡层和控制栅电极。 通过向控制栅电极施加磁场来增加控制栅电极的温度。 通过允许将升高的温度转移到与控制栅电极接触的阻挡层而使阻挡层致密化。

公开(公告)号：US20090114977A1

公开(公告)日：2009-05-07

申请号：US12147177

申请日：2008-06-26

申请人： Ki Seon Park ,  Moon Sig Joo ,  Yong Top Kim ,  Jae Young Park ,  Ki Hong Lee

发明人： Ki Seon Park ,  Moon Sig Joo ,  Yong Top Kim ,  Jae Young Park ,  Ki Hong Lee

IPC分类号： H01L29/792 ,  H01L21/28

CPC分类号： H01L29/792 ,  H01L27/11568 ,  H01L29/4234 ,  H01L29/513

摘要： Disclosed herein is a nonvolatile memory device having a charge trapping layer and a method of making the same. The nonvolatile memory device includes a substrate, a tunneling layer disposed on the substrate, a charge trapping layer disposed on the tunneling layer, a first blocking layer disposed on the charge trapping layer, a second blocking layer disposed on the first blocking layer, and a control gate electrode disposed on the second blocking layer. A first band gap between the first blocking layer and the charge trapping layer is larger than a second band gap between the second blocking layer and the charge trapping layer.

摘要翻译： 这里公开了具有电荷捕获层的非易失性存储器件及其制造方法。 非易失性存储器件包括衬底，设置在衬底上的隧道层，设置在隧道层上的电荷俘获层，设置在电荷俘获层上的第一阻挡层，设置在第一阻挡层上的第二阻挡层，以及 设置在第二阻挡层上的控制栅电极。 第一阻挡层和电荷俘获层之间的第一带隙大于第二阻挡层和电荷俘获层之间的第二带隙。

公开(公告)号：US20080003741A1

公开(公告)日：2008-01-03

申请号：US11646481

申请日：2006-12-28

申请人： Ki-Seon Park ,  Jae-Sung Roh ,  Deok-Sin Kil ,  Han-Sang Song ,  Seung-Jin Yeom ,  Jin-Hyock Kim ,  Kee-Jeung Lee

发明人： Ki-Seon Park ,  Jae-Sung Roh ,  Deok-Sin Kil ,  Han-Sang Song ,  Seung-Jin Yeom ,  Jin-Hyock Kim ,  Kee-Jeung Lee

IPC分类号： H01L21/8244

CPC分类号： H01L28/91 ,  H01L27/10852

摘要： A method for fabricating a cylindrical capacitor. The method includes forming an isolation structure including an interlayer on a substrate, the substrate having a plurality of contact plugs formed therein, forming a plurality of opening regions by etching the isolation structure, thereby exposing selected portions of the contact plugs, forming storage nodes on a surface of the opening regions, etching selected portions of the isolation structure to form a patterned interlayer that encompasses selected portions of the storage nodes, thereby supporting the storage nodes, removing remaining portions of the isolation structure, and removing the patterned interlayer to expose inner and outer walls of the storage nodes.

摘要翻译： 一种制造圆柱形电容器的方法。 所述方法包括在基板上形成包括中间层的隔离结构，所述基板具有形成在其中的多个接触塞，通过蚀刻隔离结构形成多个开口区域，从而暴露接触塞的选定部分，形成储存节点 蚀刻开口区域的表面，蚀刻隔离结构的选定部分以形成包围存储节点的选定部分的图案化中间层，从而支撑存储节点，去除隔离结构的剩余部分，以及去除图案化中间层以暴露内部 和存储节点的外壁。

公开(公告)号：US06329237B1

公开(公告)日：2001-12-11

申请号：US09466896

申请日：1999-12-20

申请人： Kyong Min Kim ,  Chan Lim ,  Kil Ho Lee ,  Ki Seon Park

发明人： Kyong Min Kim ,  Chan Lim ,  Kil Ho Lee ,  Ki Seon Park

IPC分类号： H01L218242

CPC分类号： H01L21/31691 ,  C23C16/405 ,  C23C16/409 ,  C23C16/56 ,  H01L28/55

摘要： There is disclosed a method of making a high dielectric capacitor of a semiconductor device using Ta2O5, BST((Ba1−xSrx)TiO3) etc. of a high dielectric characteristic as a capacitor dielectric film in a very high integrated memory device. The present invention has its object to provide a method of manufacturing a high dielectric capacitor of a semiconductor device, which can effectively remove carbon contained within the thin film after deposition of the BST film and defects of oxygen depletion caused upon deposition of the thin film and which can also remove carbon contained within the thin film after deposition of the tantalum oxide film and defects of oxygen depletion caused upon deposition of the thin film, without further difficult processes or without any deterioration of the electrical characteristic of the capacitor. It employs the technology which is able to effectively removing defects of carbon and oxygen depletion within the thin film, by forming a plasma O3 gas having a good reactivity and by processing the plasma for the BST thin film and tantalum oxide film. Thus, it can extend the lifetime of the activated oxygen of oxygen, which had been a problem in processing a conventional UV-O3, by means of plasma process using O3 gas. Therefore, it can effectively remove defects of carbon and oxygen within the BST thin film and tantalum oxide film without complicating the process or deteriorating the electrical characteristic of the capacitor. The present invention also proposes a detailed process condition, which can optimize the plasma process using O3 gas.

摘要翻译： 公开了在非常高的集成存储器件中使用具有高介电特性的Ta2O5，BST（（Ba1-xSrx）TiO3）等作为电容器电介质膜的半导体器件的高介电电容器的方法。 本发明的目的是提供一种制造半导体器件的高介电电容器的方法，其可以有效地去除沉积BST膜之后的薄膜中包含的碳和沉积薄膜时引起的氧耗损缺陷， 其也可以在沉积氧化钽膜之后，除去薄膜中所含的碳和沉积薄膜所引起的氧耗尽的缺陷，而不需要进一步的困难处理或不会使电容器的电特性恶化。 通过形成具有良好反应性的等离子体O 3气体和通过处理BST薄膜和氧化钽膜的等离子体，采用能够有效地去除薄膜内的碳和氧缺乏的缺陷的技术。 因此，通过使用O 3气体的等离子体处理，可以延长氧气的活化氧的寿命，这在处理常规的UV-O 3中是一个问题。 因此，可以有效地去除BST薄膜和氧化钽膜内的碳和氧的缺陷，而不会使工艺复杂化或劣化电容器的电特性。 本发明还提出了一种详细的工艺条件，其可以优化使用O 3气体的等离子体工艺。

公开(公告)号：US20130037896A1

公开(公告)日：2013-02-14

申请号：US13529051

申请日：2012-06-21

申请人： Jung Woo Park ,  Gil Jae Park ,  Ki Seon Park

发明人： Jung Woo Park ,  Gil Jae Park ,  Ki Seon Park

IPC分类号： H01L29/82 ,  H01L43/12

CPC分类号： H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/12

摘要： A method for fabricating a semiconductor device includes forming a magnetic tunnel junction (MTJ) element on a substrate, forming a first capping layer along the shape of the MTJ element, forming an insulating layer on the first capping layer, forming a trench exposing a portion of the first capping layer above the MTJ element by selectively etching the insulating layer, forming a second capping layer on sidewalls of the trench, removing the exposed portion of the first capping layer using the second capping layer as an etching mask to expose an upper surface of the MTJ element, and forming a conductive layer in the trench, wherein the conductive layer contacts the upper surface of the MTJ element.

摘要翻译： 一种制造半导体器件的方法包括在衬底上形成磁隧道结（MTJ）元件，沿着MTJ元件的形状形成第一覆盖层，在第一覆盖层上形成绝缘层，形成暴露部分 通过选择性地蚀刻绝缘层，在沟槽的侧壁上形成第二覆盖层，使用第二覆盖层作为蚀刻掩模去除第一覆盖层的暴露部分，以暴露上表面 的MTJ元件，并且在沟槽中形成导电层，其中导电层接触MTJ元件的上表面。

公开(公告)号：US20110204430A1

公开(公告)日：2011-08-25

申请号：US13097479

申请日：2011-04-29

申请人： Se Jun KIM ,  Eun Seok CHOI ,  Kyoung Hwan PARK ,  Hyun Seung YOO ,  Myung Shik LEE ,  Young Ok HONG ,  Jung Ryul AHN ,  Yong Top KIM ,  Kyung Pil HWANG ,  Won Sic WOO ,  Jae Young PARK ,  Ki Hong LEE ,  Ki Seon PARK ,  Moon Sig JOO

发明人： Se Jun KIM ,  Eun Seok CHOI ,  Kyoung Hwan PARK ,  Hyun Seung YOO ,  Myung Shik LEE ,  Young Ok HONG ,  Jung Ryul AHN ,  Yong Top KIM ,  Kyung Pil HWANG ,  Won Sic WOO ,  Jae Young PARK ,  Ki Hong LEE ,  Ki Seon PARK ,  Moon Sig JOO

IPC分类号： H01L29/792 ,  B82Y99/00

CPC分类号： H01L29/513 ,  H01L27/105 ,  H01L27/11568 ,  H01L27/11573 ,  H01L29/792

摘要： A nonvolatile memory device and a method of fabricating the same is provided to prevent charges stored in a charge trap layer from moving to neighboring memory cells. The method of fabricating a nonvolatile memory device, includes forming a first dielectric layer on a semiconductor substrate in which active regions are defined by isolation layers, forming a charge trap layer on the first dielectric layer, removing the first dielectric layer and the charge trap layer over the isolation layers, forming a second dielectric layer on the isolation layers including the charge trap layer, and forming a conductive layer on the second dielectric layer.

摘要翻译： 提供了一种非易失性存储器件及其制造方法，以防止存储在电荷陷阱层中的电荷移动到相邻存储器单元。 制造非易失性存储器件的方法包括在半导体衬底上形成第一电介质层，其中有源区由隔离层限定，在第一电介质层上形成电荷陷阱层，去除第一介电层和电荷陷阱层 在隔离层上，在包括电荷陷阱层的隔离层上形成第二电介质层，并在第二介电层上形成导电层。

公开(公告)号：US07955960B2

公开(公告)日：2011-06-07

申请号：US12052914

申请日：2008-03-21

申请人： Se Jun Kim ,  Eun Seok Choi ,  Kyoung Hwan Park ,  Hyun Seung Yoo ,  Myung Shik Lee ,  Young Ok Hong ,  Jung Ryul Ahn ,  Yong Top Kim ,  Kyung Pil Hwang ,  Won Sic Woo ,  Jae Young Park ,  Ki Hong Lee ,  Ki Seon Park ,  Moon Sig Joo

发明人： Se Jun Kim ,  Eun Seok Choi ,  Kyoung Hwan Park ,  Hyun Seung Yoo ,  Myung Shik Lee ,  Young Ok Hong ,  Jung Ryul Ahn ,  Yong Top Kim ,  Kyung Pil Hwang ,  Won Sic Woo ,  Jae Young Park ,  Ki Hong Lee ,  Ki Seon Park ,  Moon Sig Joo

IPC分类号： H01L21/336

CPC分类号： H01L29/513 ,  H01L27/105 ,  H01L27/11568 ,  H01L27/11573 ,  H01L29/792

摘要： A nonvolatile memory device and a method of fabricating the same is provided to prevent charges stored in a charge trap layer from moving to neighboring memory cells. The method of fabricating a nonvolatile memory device, includes forming a first dielectric layer on a semiconductor substrate in which active regions are defined by isolation layers, forming a charge trap layer on the first dielectric layer, removing the first dielectric layer and the charge trap layer over the isolation layers, forming a second dielectric layer on the isolation layers including the charge trap layer, and forming a conductive layer on the second dielectric layer.

摘要翻译： 提供了一种非易失性存储器件及其制造方法，以防止存储在电荷陷阱层中的电荷移动到相邻存储器单元。 制造非易失性存储器件的方法包括在半导体衬底上形成第一电介质层，其中有源区由隔离层限定，在第一电介质层上形成电荷陷阱层，去除第一介电层和电荷陷阱层 在隔离层上，在包括电荷陷阱层的隔离层上形成第二电介质层，并在第二介电层上形成导电层。

公开(公告)号：US07919371B2

公开(公告)日：2011-04-05

申请号：US12139623

申请日：2008-06-16

申请人： Ki Hong Lee ,  Seung Ho Pyi ,  Ki Seon Park

发明人： Ki Hong Lee ,  Seung Ho Pyi ,  Ki Seon Park

IPC分类号： H01L21/336

CPC分类号： H01L21/28282 ,  H01L21/3105 ,  H01L21/31608 ,  H01L21/31616

摘要： A method for fabricating a non-volatile memory device with a charge trapping layer wherein a tunneling layer, a charge trapping layer, a blocking layer, and a control gate electrode are formed on a semiconductor substrate. A temperature of the control gate electrode is increased by applying a magnetic field to the control gate electrode. The blocking layer is densified by allowing the increased temperature to be transferred to the blocking layer contacting the control gate electrode.

摘要翻译： 一种用于制造具有电荷捕获层的非易失性存储器件的方法，其中在半导体衬底上形成有隧道层，电荷俘获层，阻挡层和控制栅电极。 通过向控制栅电极施加磁场来增加控制栅电极的温度。 通过允许将升高的温度转移到与控制栅电极接触的阻挡层而使阻挡层致密化。

公开(公告)号：US20100240188A1

公开(公告)日：2010-09-23

申请号：US12794412

申请日：2010-06-04

申请人： Jin-Hyock KIM ,  Seung-Jin Yeom ,  Ki-Seon Park ,  Han-Sang Song ,  Deok-Sin Kil ,  Jae-Sung Roh

发明人： Jin-Hyock KIM ,  Seung-Jin Yeom ,  Ki-Seon Park ,  Han-Sang Song ,  Deok-Sin Kil ,  Jae-Sung Roh

IPC分类号： H01L21/02

CPC分类号： H01L27/10844 ,  H01L21/8239 ,  H01L27/10808 ,  H01L27/10835 ,  H01L27/10852 ,  H01L27/10855 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/91

摘要： A method for fabricating a capacitor includes: forming a storage node contact plug over a substrate; forming an insulation layer having an opening exposing a surface of the storage node contact plug over the storage contact plug; forming a conductive layer for a storage node over the insulation layer and the exposed surface of the storage node contact plug through two steps performed at different temperatures; performing an isolation process to isolate parts of the conductive layer; and sequentially forming a dielectric layer and a plate electrode over the isolated conductive layer.

摘要翻译： 一种制造电容器的方法包括：在衬底上形成存储节点接触插塞; 形成绝缘层，其具有使存储节点接触插塞的表面暴露在存储接触插塞上的开口; 通过在不同温度下执行的两个步骤，在绝缘层和存储节点接触插塞的暴露表面上形成用于存储节点的导电层; 执行隔离工艺以隔离导电层的部分; 并在隔离的导电层上依次形成电介质层和平板电极。

公开(公告)号：US07754577B2

公开(公告)日：2010-07-13

申请号：US11452407

申请日：2006-06-14

申请人： Jin-Hyock Kim ,  Seung-Jin Yeom ,  Ki-Seon Park ,  Han-Sang Song ,  Deok-Sin Kil ,  Jae-Sung Roh

发明人： Jin-Hyock Kim ,  Seung-Jin Yeom ,  Ki-Seon Park ,  Han-Sang Song ,  Deok-Sin Kil ,  Jae-Sung Roh

IPC分类号： H01L21/331

CPC分类号： H01L27/10844 ,  H01L21/8239 ,  H01L27/10808 ,  H01L27/10835 ,  H01L27/10852 ,  H01L27/10855 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/91

摘要： A method for fabricating a capacitor includes: forming a storage node contact plug over a substrate; forming an insulation layer having an opening exposing a surface of the storage node contact plug over the storage contact plug; forming a conductive layer for a storage node over the insulation layer and the exposed surface of the storage node contact plug through two steps performed at different temperatures; performing an isolation process to isolate parts of the conductive layer; and sequentially forming a dielectric layer and a plate electrode over the isolated conductive layer.

摘要翻译： 一种制造电容器的方法包括：在衬底上形成存储节点接触插塞; 形成绝缘层，其具有使存储节点接触插塞的表面暴露在存储接触插塞上的开口; 通过在不同温度下执行的两个步骤，在绝缘层和存储节点接触插塞的暴露表面上形成用于存储节点的导电层; 执行隔离工艺以隔离导电层的部分; 并在隔离的导电层上依次形成电介质层和平板电极。