公开(公告)号：US06329237B1

公开(公告)日：2001-12-11

申请号：US09466896

申请日：1999-12-20

申请人： Kyong Min Kim ,  Chan Lim ,  Kil Ho Lee ,  Ki Seon Park

发明人： Kyong Min Kim ,  Chan Lim ,  Kil Ho Lee ,  Ki Seon Park

IPC分类号： H01L218242

CPC分类号： H01L21/31691 ,  C23C16/405 ,  C23C16/409 ,  C23C16/56 ,  H01L28/55

摘要： There is disclosed a method of making a high dielectric capacitor of a semiconductor device using Ta2O5, BST((Ba1−xSrx)TiO3) etc. of a high dielectric characteristic as a capacitor dielectric film in a very high integrated memory device. The present invention has its object to provide a method of manufacturing a high dielectric capacitor of a semiconductor device, which can effectively remove carbon contained within the thin film after deposition of the BST film and defects of oxygen depletion caused upon deposition of the thin film and which can also remove carbon contained within the thin film after deposition of the tantalum oxide film and defects of oxygen depletion caused upon deposition of the thin film, without further difficult processes or without any deterioration of the electrical characteristic of the capacitor. It employs the technology which is able to effectively removing defects of carbon and oxygen depletion within the thin film, by forming a plasma O3 gas having a good reactivity and by processing the plasma for the BST thin film and tantalum oxide film. Thus, it can extend the lifetime of the activated oxygen of oxygen, which had been a problem in processing a conventional UV-O3, by means of plasma process using O3 gas. Therefore, it can effectively remove defects of carbon and oxygen within the BST thin film and tantalum oxide film without complicating the process or deteriorating the electrical characteristic of the capacitor. The present invention also proposes a detailed process condition, which can optimize the plasma process using O3 gas.

摘要翻译： 公开了在非常高的集成存储器件中使用具有高介电特性的Ta2O5，BST（（Ba1-xSrx）TiO3）等作为电容器电介质膜的半导体器件的高介电电容器的方法。 本发明的目的是提供一种制造半导体器件的高介电电容器的方法，其可以有效地去除沉积BST膜之后的薄膜中包含的碳和沉积薄膜时引起的氧耗损缺陷， 其也可以在沉积氧化钽膜之后，除去薄膜中所含的碳和沉积薄膜所引起的氧耗尽的缺陷，而不需要进一步的困难处理或不会使电容器的电特性恶化。 通过形成具有良好反应性的等离子体O 3气体和通过处理BST薄膜和氧化钽膜的等离子体，采用能够有效地去除薄膜内的碳和氧缺乏的缺陷的技术。 因此，通过使用O 3气体的等离子体处理，可以延长氧气的活化氧的寿命，这在处理常规的UV-O 3中是一个问题。 因此，可以有效地去除BST薄膜和氧化钽膜内的碳和氧的缺陷，而不会使工艺复杂化或劣化电容器的电特性。 本发明还提出了一种详细的工艺条件，其可以优化使用O 3气体的等离子体工艺。

公开(公告)号：US06355516B1

公开(公告)日：2002-03-12

申请号：US09606411

申请日：2000-06-29

申请人： You Sung Kim ,  Kyong Min Kim ,  Chang Seo Park ,  Han Sang Song ,  Ki Seon Park ,  Chan Lim

发明人： You Sung Kim ,  Kyong Min Kim ,  Chang Seo Park ,  Han Sang Song ,  Ki Seon Park ,  Chan Lim

IPC分类号： H01L218242

CPC分类号： H01L21/31604 ,  H01L21/28568 ,  H01L28/56 ,  Y10S438/957

摘要： There is disclosed a method of manufacturing a capacitor in a semiconductor device capable of effectively removing the organic impurity of a Ta2O5 film by performing an in-situ plasma process using the mixture gas of nitrogen and oxygen during the process of forming the Ta2O5 film as the dielectric film of the capacitor. Thus, it can reduce the impurity of the Ta2O5 film to increase the supply of oxygen, and thus can improve the dielectric and leak current characteristic of the Ta2O5 film. Further, it can prohibit oxidization of the underlying electrode, thus reducing the thickness of the equivalent oxide film of the capacitor as possible and sufficiently securing the capacitance of the capacitor. The method according to the present invention includes forming a polysilicon film on a semiconductor substrate in which a given underlying structure is formed; sequentially forming a first buffer layer and a metal layer on the polysilicon film to form a lower electrode; forming a Ta2O5 film on the metal layer, wherein the process of depositing the Ta2O5 film is performed by a plasma process under the mixture gas atmosphere of nitrogen and oxygen; and forming a second buffer layer and an upper electrode on the Ta2O5 film.

摘要翻译： 公开了一种在半导体器件中制造电容器的方法，其能够通过在形成Ta 2 O 5膜的过程中使用氮和氧的混合气体进行原位等离子体处理来有效地除去Ta 2 O 5膜的有机杂质，作为 电容器的介质膜。 因此，可以减少Ta2O5薄膜的杂质，增加氧气供应，从而可以提高Ta2O5薄膜的介电和漏电流特性。 此外，它可以禁止底层电极的氧化，从而尽可能地减小电容器的等效氧化膜的厚度，并充分确保电容器的电容。 根据本发明的方法包括在其中形成给定的底层结构的半导体衬底上形成多晶硅膜; 在多晶硅膜上依次形成第一缓冲层和金属层，形成下电极; 在金属层上形成Ta2O5膜，其中在氮和氧的混合气体气氛下通过等离子体工艺进行沉积Ta2O5膜的工艺; 并在Ta 2 O 5膜上形成第二缓冲层和上电极。

公开(公告)号：US06709916B2

公开(公告)日：2004-03-23

申请号：US10330583

申请日：2002-12-27

申请人： Kwang Jun Cho ,  Ki Seon Park ,  Kyong Min Kim ,  Dong Woo Shin

发明人： Kwang Jun Cho ,  Ki Seon Park ,  Kyong Min Kim ,  Dong Woo Shin

IPC分类号： H01L218242

CPC分类号： H01L28/56 ,  C23C16/409 ,  H01L21/31691 ,  H01L27/10855

摘要： A method for forming a capacitor of a semiconductor device having a dielectric film of high dielectric constant having three-dimensional structure for securing capacitance of semiconductor device in order to have excellent deposition characteristics, by forming a storage electrode formed of Ru film on a semiconductor substrate and forming dielectric films formed of high dielectric constant materials having excellent step coverage on the surface of the storage electrode, the dielectric films having a stacked structure of a first dielectric film formed at low deposition speed and a second dielectric film formed at higher deposition speed by reducing the amount of added gas, thereby performing the subsequent process easily and improving yield and productivity of semiconductor device and then embodying high integration of semiconductor device.

摘要翻译： 一种用于形成半导体器件的电容器的方法，具有具有三维结构的具有三维结构的介电膜的半导体器件的电容器，用于通过在半导体衬底上形成由Ru膜形成的存储电极以便具有优异的淀积特性，从而确保半导体器件的电容 以及在所述存储电极的表面上形成由具有优异阶梯覆盖度的高介电常数材料形成的电介质膜，所述电介质膜具有以低沉积速度形成的第一电介质膜的堆叠结构和以较高沉积速度形成的第二电介质膜 减少添加气体的量，从而容易地进行后续处理，并提高半导体器件的产率和生产率，然后体现半导体器件的高集成度。

公开(公告)号：US06559000B2

公开(公告)日：2003-05-06

申请号：US09894920

申请日：2001-06-29

申请人： Kyong Min Kim ,  Jong Min Lee ,  Chan Lim ,  Han Sang Song

发明人： Kyong Min Kim ,  Jong Min Lee ,  Chan Lim ,  Han Sang Song

IPC分类号： H01L218242

CPC分类号： H01L28/60 ,  C23C16/18 ,  H01L21/31604

摘要： There is disclosed a method of manufacturing a capacitor in a semiconductor device. The present invention forms a Ru film as a lower electrode of the capacitor in which a Ta2O5 film is used as a dielectric film by introducing Ru of a raw material, oxygen and NH3 in order to reduce oxygen or a NH3 plasma process as a subsequent process is performed in order to remove oxygen existing on the surface of the Ru film. Therefore, the present invention can prevent oxidization of a diffusion prevention film due to oxygen existing in a Ru film during annealing process performed after deposition of a Ta2O5 film and thus improve reliability of the device.

公开(公告)号：US06303427B1

公开(公告)日：2001-10-16

申请号：US09659508

申请日：2000-09-11

申请人： Han Sang Song ,  You Sung Kim ,  Chan Lim ,  Chang Seo Park ,  Kyong Min Kim

发明人： Han Sang Song ,  You Sung Kim ,  Chan Lim ,  Chang Seo Park ,  Kyong Min Kim

IPC分类号： H01L21336

CPC分类号： H01L28/40 ,  H01L21/31604 ,  H01L28/56 ,  H01L28/60

摘要： The present invention relates to a method of manufacturing a capacitor in a semiconductor device. It is designed to solve the problem due to oxidization of the surface of the underlying tungsten electrode during thermal process performed after depositing Ta2O5 to form a dielectric film in a Ta2O5 capacitor of a MIM (Metal Insulator Metal) structure using tungsten (W) as an underlying electrode. Thus, the present invention includes forming a good thin WO3 film by processing the surface of the underlying tungsten electrode by low oxidization process before forming a Ta2O5 dielectric film and then performing deposition and thermal process of Ta2O5 to form a Ta2O5 dielectric film. As a good WO3 film is formed on the surface of the underlying tungsten electrode before forming a Ta2O5 dielectric film, the grain boundary of the tungsten film is filled with oxygen atoms, thus preventing diffusion of oxygen atoms from the Ta2O5 dielectric film during a subsequent thermal process. Also, as a further oxidization of the surface of the underlying tungsten electrode by the WO3 film could be prevented, thereby improving the characteristic of the leak current of the Ta2O5 capacitor.

摘要翻译： 本发明涉及一种在半导体器件中制造电容器的方法。 其设计用于解决在沉积Ta 2 O 5之后进行的热处理期间底层钨电极的表面的氧化的问题，以在使用钨（W）作为（W）的MIM（金属绝缘体金属）结构的MIM（金属绝缘体金属）结构的Ta 2 O 5电容器中形成介电膜 底层电极。 因此，本发明包括通过在形成Ta 2 O 5介电膜之前通过低氧化处理来处理下面的钨电极的表面，然后进行Ta 2 O 5的沉积和热处理以形成Ta 2 O 5电介质膜来形成良好的薄WO 3膜。 由于在形成Ta 2 O 5电介质膜之前在下面的钨电极的表面上形成良好的WO 3膜，所以钨膜的晶界被氧原子填充，从而防止在随后的热过程中氧原子从Ta 2 O 5介电膜扩散 处理。 此外，通过WO 3膜可以防止下层钨电极的表面的进一步氧化，从而提高Ta2O5电容器的漏电流的特性。

公开(公告)号：US06326259B1

公开(公告)日：2001-12-04

申请号：US09852602

申请日：2001-05-10

申请人： Kyong Min Kim ,  Han Sang Song ,  Dong Jun Kim

发明人： Kyong Min Kim ,  Han Sang Song ,  Dong Jun Kim

IPC分类号： H01L218242

CPC分类号： H01L28/56 ,  H01L21/02183 ,  H01L21/02194 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31604 ,  H01L28/91

摘要： A method of manufacturing a capacitor in a semiconductor device uses a metal as an upper electrode and a lower electrode, and forms a dielectric film in a double structure of a titanium-containing tantalum oxide film and an amorphous tantalum oxide film. Therefore, the invention can secure a sufficient capacitance while improving an electrical characteristic of the capacitor.

摘要翻译： 在半导体器件中制造电容器的方法使用金属作为上部电极和下部电极，并且在含钛的钽氧化物膜和非晶形氧化钽膜的双重结构中形成电介质膜。 因此，本发明可以确保足够的电容，同时改善电容器的电特性。

公开(公告)号：US06653197B2

公开(公告)日：2003-11-25

申请号：US09867657

申请日：2001-05-31

申请人： Kyong Min Kim ,  Kwang Jun Cho ,  Jong Min Lee

发明人： Kyong Min Kim ,  Kwang Jun Cho ,  Jong Min Lee

IPC分类号： H01L2120

CPC分类号： H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02356 ,  H01L21/3143 ,  H01L28/60

摘要： Disclosed herein is a method for the fabrication of a capacitor of semiconductor device, which is capable of increasing a charge storage capacitance of the capacitor while generation of leakage current in the capacitor. The method comprises the steps of: forming a ruthenium film as a lower electrode on a semiconductor substrate; forming a TaON film having a high dielectric constant on the ruthenium film; and forming a upper electrode on the TaON film.

摘要翻译： 这里公开了一种用于制造半导体器件的电容器的方法，其能够在电容器中产生漏电流的同时增加电容器的电荷存储电容。 该方法包括以下步骤：在半导体衬底上形成作为下电极的钌膜; 在钌膜上形成具有高介电常数的TaON膜; 并在TaON膜上形成上电极。

公开(公告)号：US06699768B2

公开(公告)日：2004-03-02

申请号：US10315403

申请日：2002-12-10

申请人： Kyong Min Kim

发明人： Kyong Min Kim

IPC分类号： H01L218242

CPC分类号： H01L28/65 ,  C23C16/18 ,  H01L21/28556 ,  H01L27/10855 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60

摘要： Methods for forming capacitors of semiconductor devices are disclosed, and more particularly, methods for forming capacitors having a stacked structure of metal layer-insulating film-metal layer and having its storage electrode formed of ruthenium (hereinafter, referred to as ‘Ru’), which provides improved formation rates of Ru film having desired thickness using ozone (O3) having high reactivity.

摘要翻译： 公开了用于形成半导体器件的电容器的方法，更具体地，涉及用于形成具有金属层 - 绝缘膜 - 金属层的堆叠结构并且具有由钌形成的存储电极（以下称为“Ru”）的电容器的方法， 其使用具有高反应性的臭氧（O 3）提供具有期望厚度的Ru膜的提高的形成速率。

公开(公告)号：US06716717B2

公开(公告)日：2004-04-06

申请号：US09867527

申请日：2001-05-31

申请人： Kyong Min Kim ,  Dong Jun Kim

发明人： Kyong Min Kim ,  Dong Jun Kim

IPC分类号： H01L2120

CPC分类号： H01L21/02356 ,  C23C16/0281 ,  C23C16/308 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/3145 ,  H01L28/60

摘要： Disclosed herein is a method for the fabrication of a capacitor of semiconductor device, which is capable of increasing a charge storage capacitance of the capacitor while preventing generation of leakage current in the capacitor. The disclosed method comprises comprising the steps of: forming a ruthenium film as a lower electrode on a semiconductor substrate; depositing an amorphous TaON film having an excellent dielectric constant on the ruthenium film; subjecting the resulting substrate to a first thermal treatment to prevent oxidation of the lower electrode and to remove carbons present in the amorphous TaON thin film; subjecting the resulting substrate to a second thermal treatment to crystallize the amorphous TaON thin film; and forming a metal film as a metal film on the crystalline TaON film.

摘要翻译： 这里公开了一种用于制造半导体器件的电容器的方法，其能够增加电容器的电荷存储电容，同时防止在电容器中产生漏电流。 所公开的方法包括以下步骤：在半导体衬底上形成作为下电极的钌膜; 在所述钌膜上沉积具有优异介电常数的无定形TaON膜; 对所得到的基板进行第一热处理以防止下电极的氧化并除去存在于非晶态TaON薄膜中的碳; 对所得衬底进行第二次热处理以使无定形TaON薄膜结晶; 并在结晶TaON膜上形成金属膜作为金属膜。

公开(公告)号：US06607963B2

公开(公告)日：2003-08-19

申请号：US09867660

申请日：2001-05-31

申请人： Kyong Min Kim ,  Han Sang Song

发明人： Kyong Min Kim ,  Han Sang Song

IPC分类号： H01L2120

CPC分类号： H01L28/60 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02356 ,  H01L21/28556 ,  H01L21/3144 ,  H01L21/3212 ,  H01L28/91

摘要： The present invention discloses a method for forming a capacitor of a semiconductor device which can increase a capacitance and prevent a leakage current at the same time. The method includes the steps of providing a semiconductor substrate where a plug polysilicon film and a metal barrier film consisting of Ti/TiN film have been sequentially filled in a contact hole of an interlayer insulation film, forming a cap oxide film on the semiconductor substrate, patterning the cap oxide film to define a capacitor region and to expose the interlayer insulation film and the metal barrier film, forming a nitride film over the whole substrate according to a plasma treatment using NH3 gas, depositing an Ru film for a lower electrode on the nitride film, forming a cylindrical lower electrode, by performing a chemical mechanical polishing process on the Ru film and the nitride film, and removing the cap oxide film, depositing an amorphous TaON film on the lower electrode, crystallizing the amorphous TaON film according to a thermal treatment, and forming a metal film for an upper electrode on the crystallized TaON film.