公开(公告)号：US06326259B1

公开(公告)日：2001-12-04

申请号：US09852602

申请日：2001-05-10

Applicant: Kyong Min Kim ,  Han Sang Song ,  Dong Jun Kim

Inventor： Kyong Min Kim ,  Han Sang Song ,  Dong Jun Kim

IPC: H01L218242

CPC classification number: H01L28/56 ,  H01L21/02183 ,  H01L21/02194 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31604 ,  H01L28/91

Abstract: A method of manufacturing a capacitor in a semiconductor device uses a metal as an upper electrode and a lower electrode, and forms a dielectric film in a double structure of a titanium-containing tantalum oxide film and an amorphous tantalum oxide film. Therefore, the invention can secure a sufficient capacitance while improving an electrical characteristic of the capacitor.

Abstract translation: 在半导体器件中制造电容器的方法使用金属作为上部电极和下部电极，并且在含钛的钽氧化物膜和非晶形氧化钽膜的双重结构中形成电介质膜。 因此，本发明可以确保足够的电容，同时改善电容器的电特性。

公开(公告)号：US06410381B1

公开(公告)日：2002-06-25

申请号：US09867658

申请日：2001-05-31

Applicant: Kyong Min Kim ,  Kyung Cheol Jeong ,  Han Sang Song ,  Dong Jun Kim

Inventor： Kyong Min Kim ,  Kyung Cheol Jeong ,  Han Sang Song ,  Dong Jun Kim

IPC: H01L218242

Abstract: The present invention discloses a method for forming a capacitor of a semiconductor device which can increase a capacitance and prevent a leakage current at the same time. The method includes the steps of depositing a cap oxide film on a semiconductor substrate, patterning the cap oxide film to expose a capacitor region of the semiconductor substrate, consecutively depositing an Ru film for a lower electrode on the patterned cap oxide film and the semiconductor substrate in in-situ according to a low pressure chemical vapor deposition(LPCVD) and a plasma enhanced chemical vapor deposition(PECVD), forming a cylindrical lower electrode, by performing a chemical mechanical polishing process on the Ru film and removing the cap oxide film, forming an amorphous TaON film having a high dielectric constant on the lower electrode, crystallizing the amorphous TaON film according to a thermal treatment, and forming a metal film for an upper electrode on the crystallized TaON film.

公开(公告)号：US06365487B2

公开(公告)日：2002-04-02

申请号：US09852929

申请日：2001-05-10

Applicant: Kyong Min Kim ,  Han Sang Song ,  Dong Jun Kim

Inventor： Kyong Min Kim ,  Han Sang Song ,  Dong Jun Kim

IPC: H01L2120

CPC classification number: H01L21/02183 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31604 ,  H01L28/55 ,  H01L28/75 ,  H01L28/91

Abstract: A method of manufacturing a capacitor in a semiconductor device wherein a first a Ru film used as a lower electrode is deposited by an LPCVD method, a mixed plasma process of Ar and H2 is performed, and a second Ru film is deposited by an LPCVD method, thus improving the surface roughness of the Ru film. The method can obtain a high capacitance and a low leakage current in a capacitor using a Ta2O5 film as a dielectric film.

Abstract translation: 一种在半导体器件中制造电容器的方法，其中通过LPCVD方法沉积用作下电极的第一Ru膜，进行Ar和H2的混合等离子体处理，并通过LPCVD法沉积第二Ru膜 ，从而提高Ru膜的表面粗糙度。 该方法可以在使用Ta 2 O 5膜作为电介质膜的电容器中获得高电容和低漏电流。

公开(公告)号：US06716717B2

公开(公告)日：2004-04-06

申请号：US09867527

申请日：2001-05-31

Applicant: Kyong Min Kim ,  Dong Jun Kim

Inventor： Kyong Min Kim ,  Dong Jun Kim

IPC: H01L2120

CPC classification number: H01L21/02356 ,  C23C16/0281 ,  C23C16/308 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/3145 ,  H01L28/60

Abstract: Disclosed herein is a method for the fabrication of a capacitor of semiconductor device, which is capable of increasing a charge storage capacitance of the capacitor while preventing generation of leakage current in the capacitor. The disclosed method comprises comprising the steps of: forming a ruthenium film as a lower electrode on a semiconductor substrate; depositing an amorphous TaON film having an excellent dielectric constant on the ruthenium film; subjecting the resulting substrate to a first thermal treatment to prevent oxidation of the lower electrode and to remove carbons present in the amorphous TaON thin film; subjecting the resulting substrate to a second thermal treatment to crystallize the amorphous TaON thin film; and forming a metal film as a metal film on the crystalline TaON film.

Abstract translation: 这里公开了一种用于制造半导体器件的电容器的方法，其能够增加电容器的电荷存储电容，同时防止在电容器中产生漏电流。 所公开的方法包括以下步骤：在半导体衬底上形成作为下电极的钌膜; 在所述钌膜上沉积具有优异介电常数的无定形TaON膜; 对所得到的基板进行第一热处理以防止下电极的氧化并除去存在于非晶态TaON薄膜中的碳; 对所得衬底进行第二次热处理以使无定形TaON薄膜结晶; 并在结晶TaON膜上形成金属膜作为金属膜。

公开(公告)号：US20100317868A1

公开(公告)日：2010-12-16

申请号：US12517980

申请日：2007-11-20

Applicant: Nam Du Kim ,  Wooseob Shin ,  Jaehyuk Jung ,  Dong Jun Kim ,  Gi Jeong Kim ,  Young Ho Moon ,  Young-Kil Chang ,  Gwan Sun Lee ,  Tae Jin Choi

Inventor： Nam Du Kim ,  Wooseob Shin ,  Jaehyuk Jung ,  Dong Jun Kim ,  Gi Jeong Kim ,  Young Ho Moon ,  Young-Kil Chang ,  Gwan Sun Lee ,  Tae Jin Choi

IPC: C07D263/06 ,  C07D305/14

CPC classification number: C07D305/14 ,  Y02P20/55

Abstract: The present invention relates to a novel method of preparing a taxane derivative having an anti-tumor and anti-leukemia activity, and intermediates used therein.

Abstract translation: 本发明涉及一种制备具有抗肿瘤和抗白血病活性的紫杉烷衍生物的新方法及其中使用的中间体。

公开(公告)号：US20100280543A1

公开(公告)日：2010-11-04

申请号：US12738478

申请日：2008-10-16

Applicant: Dong Jun Kim ,  Jun Woo Park ,  Yung Ho Jo

Inventor： Dong Jun Kim ,  Jun Woo Park ,  Yung Ho Jo

IPC: A61B17/29 ,  A61B17/00

CPC classification number: A61B34/70 ,  A61B34/71 ,  A61B34/72 ,  A61B2017/00398 ,  A61B2017/2902 ,  A61B2017/2905 ,  A61B2017/2932 ,  A61B2017/2936

Abstract: A laparoscopic surgical instrument includes a shaft and a head having a distal end to which a variety of surgical instruments are attached. The laparoscopic surgical instrument also includes a flexible joint installed between the shaft and the head; a longitudinal-driving unit including a longitudinal-driving wire connected with both longitudinal ends of the head and a longitudinal-driving roller turning the longitudinal-driving wire and a transverse-driving unit including a transverse-driving wire connected with both transverse ends of the head and a transverse-driving roller turning the transverse-driving wire. The longitudinal-driving unit turns the flexible joint in the longitudinal direction, the transverse-driving unit turns the flexible joint in the transverse direction, and the shaft has a small diameter.

Abstract translation: 腹腔镜手术器械包括轴和具有远端的头部，多个外科器械附接到该远端。 腹腔镜手术器械还包括安装在轴和头部之间的柔性接头; 纵向驱动单元，包括与头部的两个纵向端连接的纵向驱动线和转动纵向驱动线的纵向驱动辊;以及横向驱动单元，横向驱动单元包括横向驱动线，该横向驱动线与 头部和横向驱动辊转动横向驱动线。 纵向驱动单元沿纵向旋转柔性接头，横向驱动单元使柔性接头在横向上转动，并且轴具有小的直径。

公开(公告)号：US06864148B1

公开(公告)日：2005-03-08

申请号：US10655705

申请日：2003-09-05

Applicant: Chia-Shun Hsiao ,  Dong Jun Kim

Inventor： Chia-Shun Hsiao ,  Dong Jun Kim

IPC: H01L21/311 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/423 ,  H01L21/76 ,  H01L21/31 ,  H01L21/3205

CPC classification number: H01L21/76232 ,  H01L21/31111 ,  H01L21/823481 ,  H01L29/42368

Abstract: A method and structure are provided with reduced gate wrap around to advantageously control for threshold voltage and increase stability in semiconductor devices. A spacer is provided aligned to field dielectric layers to protect the dielectric layers during subsequent etch processes. The spacer is then removed prior to subsequently forming a part of a gate oxide layer and a gate conductor layer. Advantageously, the spacer protects the corner area o the field dielectric and also allows for enhanced thickness of the gate oxide near the corners.

公开(公告)号：US08950264B2

公开(公告)日：2015-02-10

申请号：US12984667

申请日：2011-01-05

Applicant: Jin Woo Nam ,  Byung Joo Paek ,  Dong Jun Kim

Inventor： Jin Woo Nam ,  Byung Joo Paek ,  Dong Jun Kim

IPC: G01M7/02

CPC classification number: G01M7/027

Abstract: A jig device usable with a flat display panel which includes a frame including a base frame having an opening and a vertical frame which extends vertically along a perimeter of the base frame and a supporting frame coupled to the base frame within the frame, on which the flat display panel is disposed, wherein the supporting frame includes fixing portions provided at corners thereof to support respective corners of the flat display panel.

Abstract translation: 一种可用于平板显示面板的夹具装置，其包括框架，该框架包括具有开口的基座框架和沿着所述底座框架的周边垂直延伸的垂直框架，以及支撑框架，其联接到所述框架内的所述基座框架， 平面显示面板设置在其中，支撑框架包括设置在其角部的固定部分，以支撑平面显示面板的各个角部。

公开(公告)号：US20140373904A1

公开(公告)日：2014-12-25

申请号：US14362736

申请日：2012-03-30

Applicant: Young Wook Choi ,  Dong Jun Kim ,  Eun Kyung Kim ,  Dae Seop Song

Inventor： Young Wook Choi ,  Dong Jun Kim ,  Eun Kyung Kim ,  Dae Seop Song

IPC: H01L31/0224 ,  H01B1/16 ,  H01B1/22

CPC classification number: H01L31/022425 ,  H01B1/16 ,  H01B1/22 ,  Y02E10/50

Abstract: The present invention relates to a paste composition for a solar cell electrode and an electrode produced therefrom. The present invention relates to a paste composition for a solar cell electrode, and an electrode produced therefrom, the paste composition comprising conductive powders, a glass frit, and an organic vehicle, the glass frit including PbO, SiO2, and TeO2, wherein an amount of said TeO2 included in the glass frit is about 1-20% by weight.

Abstract translation: 本发明涉及一种太阳能电池用电极用糊料组合物及其制造的电极。 本发明涉及一种太阳能电池用电极用糊料组合物及由其制造的电极，所述糊料组合物含有导电粉末，玻璃料和有机载体，所述玻璃料包含PbO，SiO 2和TeO 2，其中， 所述玻璃料中包含的所述TeO 2为约1-20重量％。

公开(公告)号：US20120214997A1

公开(公告)日：2012-08-23

申请号：US13502260

申请日：2010-10-19

Applicant: Nam Du Kim ,  Ji Yeon Chang ,  Dong Jun Kim ,  Hyun Seung Lee ,  Jae Hyuk Jung ,  Young Kil Chang ,  Gwan Sun Lee

Inventor： Nam Du Kim ,  Ji Yeon Chang ,  Dong Jun Kim ,  Hyun Seung Lee ,  Jae Hyuk Jung ,  Young Kil Chang ,  Gwan Sun Lee

IPC: C07D487/04 ,  C07C211/29 ,  C07C33/48 ,  C07C229/34

CPC classification number: A61K31/4985 ,  C07D487/04

Abstract: Disclosed are a novel, simple and low-cost method for preparing sitagliptin, as DPP-IV (dipeptidyl peptidase IV) inhibitor, which is useful in treating type 2 diabetes mellitus and key intermediates used in said preparation of sitagliptin.

Abstract translation: 公开了一种用于制备西他列汀的新型，简单且低成本的方法，DPP-IV（二肽基肽酶IV）抑制剂，其可用于治疗所述西他列嗪制备中使用的2型糖尿病和关键中间体。