发明授权
- 专利标题： Method for forming capacitor of semiconductor device
- 专利标题（中）： 形成半导体器件电容器的方法
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申请号： US10315403申请日： 2002-12-10
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公开(公告)号： US06699768B2公开(公告)日： 2004-03-02
- 发明人: Kyong Min Kim
- 申请人： Kyong Min Kim
- 优先权： KR2001-77851 20011210
- 主分类号： H01L218242
- IPC分类号： H01L218242
摘要：
Methods for forming capacitors of semiconductor devices are disclosed, and more particularly, methods for forming capacitors having a stacked structure of metal layer-insulating film-metal layer and having its storage electrode formed of ruthenium (hereinafter, referred to as ‘Ru’), which provides improved formation rates of Ru film having desired thickness using ozone (O3) having high reactivity.
公开/授权文献
- US20030109135A1 Method for forming capacitor of semiconductor device 公开/授权日：2003-06-12
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