Abstract:
Wafer level packages and methods of fabricating the same are provided. In one embodiment, one of the methods comprises forming semiconductor chips having a connection pad on a wafer, patterning a bottom surface of the wafer to form a trench under the connection pad, patterning a bottom surface of the trench to form a via hole exposing the bottom surface of the connection pad, and forming a connecting device connected to the connection pad through the via hole. The invention provides a wafer level package having reduced thickness, lower fabrication costs, and increased reliability compared to conventional packages.
Abstract:
In a semiconductor device package having a stress relief spacer, and a manufacturing method thereof, metal interconnect fingers extend from the body of a chip provide for chip interconnection. The metal fingers are isolated from the body of the chip by a stress-relief spacer. In one example, such isolation takes the form of an air gap. In another example, such isolation takes the form of an elastomer material. In either case, mismatch in coefficient of thermal expansion between the metal interconnect fingers and the body of the chip is avoided, alleviating the problems associated with cracking and delamination, and leading to improved device yield and device reliability.
Abstract:
Thin film transistors are formed on a lower substrate, and red, green, blue and transparent color filters are formed thereon. An organic insulating layer is formed on the color filters, and pixel electrodes are formed thereon. A black matrix and a common electrode are formed on an upper substrate facing the lower substrate.
Abstract:
Aspects of the subject matter described herein relate to a packaged semiconductor die which becomes a component of a finished multi-chip package. The packaged semiconductor die comprises a die substrate, a semiconductor package, and a sealant. The die substrate includes an insulating substrate and a circuit pattern formed on the insulating substrate. The semiconductor package has a semiconductor chip electrically coupled to the circuit pattern that is a known good package and is coupled to the die substrate. The sealant seals the semiconductor package. The packaged semiconductor die utilizes a known good package which has passed a series of package tests.
Abstract:
Disclosed herein is a ball grid array (BGA) package stack that is not limited by ball arrangement because it utilizes a foldable circuit substrate, which permits interconnection between upper and lower individual BGA packages. The foldable circuit substrate has three portions. By bending the middle second portion, the foldable circuit substrate is folded in two. In the lower BGA package, an IC chip is attached on and electrically connected to a top surface of the first portion, and external connection terminals such as solder balls are formed on a bottom surface of the first portion. The top surface of the first portion is covered with a molding resin to protect the chip, and the third portion is placed on an upper surface of the molding resin. The upper BGA package is constructed in a similar manner to the lower BGA package as described above. For stacking, the interconnection terminals of the upper BGA package are joined and electrically connected to the third portion of the foldable circuit substrate of the lower BGA package.
Abstract:
Embodiments of the invention may provide for power amplifier systems and methods. The systems and methods may include a power amplifier that generates a first differential output signal and a second differential output signal, a primary winding comprised of a plurality of primary segments, where a first end of each primary segment is connected to a first common input port and a second end of each primary segment is connected to a second common input port, where the first common input port is operative to receive the first differential output signal, and where the second common input port is operative to receive the second differential output signal, and a single secondary winding inductively coupled to the plurality of primary segments.
Abstract:
Example embodiments of the invention may provide systems and methods for a power amplifier. The systems and methods may include a first common-source device having a first source, a first gate, a first drain, and a first body, where the first source is connected to the first body, and wherein the first gate is connected to an input port. The systems and methods may further include a second common-gate device having a second source, a second gate, a second drain, and a second body, where the second source is connected to the first drain, where the second source is further connected to the second body, and where the second drain is connected to an output port.
Abstract:
Embodiments of the invention may provide for power amplifier systems and methods. The systems and methods may include a power amplifier that generates a first differential output signal and a second differential output signal, a primary winding comprised of a plurality of primary segments, where a first end of each primary segment is connected to a first common input port and a second end of each primary segment is connected to a second common input port, where the first common input port is operative to receive the first differential output signal, and where the second common input port is operative to receive the second differential output signal, and a single secondary winding inductively coupled to the plurality of primary segments.
Abstract:
A wafer level package may include a semiconductor substrate supporting an electrode pad. A first insulating layer may be provided on the semiconductor substrate. The first insulating layer may include a first opening through which the electrode pad may be exposed. A seed metal layer may be provided on an entire surface of the first insulating layer. A redistribution interconnection metal layer may be provided on the seed metal layer. A second insulating layer may be provided on the redistribution interconnection metal layer. The second insulating layer may have a second opening spaced from the first opening to expose a portion of the redistribution interconnection metal layer. The second insulating layer may surround the redistribution interconnection metal layer. An unwanted portion of seed metal layer may be removed using the second insulating layer as an etch mask.
Abstract:
A stack package of the present invention is made by stacking at least two area array type chip scale packages. Each chip scale package of an adjacent pair of chip scale packages is attached to the other in a manner that the ball land pads of the upper stacked chip scale package face in the opposite direction to those of the lower stacked chip scale package, and the circuit patterns of the upper stacked chip scale package are electrically connected to the those of the lower stacked chip scale package by, for example, connecting boards. Therefore, it is possible to stack not only fan-out type chip scale packages, but to also efficiently stack ordinary area array type chip scale packages.