Semiconductor detector and method of fabricating same

    公开(公告)号:US11843069B2

    公开(公告)日:2023-12-12

    申请号:US16703294

    申请日:2019-12-04

    摘要: The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure having a p-n junction and a hole through which a scanning beam is passed to a target. The detector also includes a top electrode for the p-n junction (e.g., anode or cathode) that provides an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode has a doped layer and can also have a buried portion beneath the doped layer to reduce a series resistance of the top electrode without changing the active area. In another embodiment, an isolation structure can be formed in the semiconductor structure near sidewalls of the hole to electrically isolate the active area from the sidewalls. A method for forming the buried portion of the top electrode is also described.

    METAL PATTERN INSPECTION METHOD AND FOCUSED ION BEAM APPARATUS

    公开(公告)号:US20230326714A1

    公开(公告)日:2023-10-12

    申请号:US18027051

    申请日:2021-08-04

    摘要: A metal pattern inspection method which applies a pulsed voltage to a metallic pattern, sets a cycle of the pulsed voltage to be shorter than a scanning cycle in which a focused ion beam is swept, indicating only a region of a secondary charged particle image corresponding to a portion of the metallic pattern which is isolated by a wire breakage and to which the pulsed voltage is applied in the form of a first pattern created as a function of surface electrical potentials changing in level with time, detecting, as a disconnection, a boundary between the first pattern and a second pattern created as a function of surface electrical potentials not changing in level with time, and determining whether there is a breaking of or a short circuit in the metallic pattern based on the presence or absence of the disconnection.

    SCREENING EDGE PLACEMENT UNIFORMITY WAFER STOCHASTICS

    公开(公告)号:US20230326710A1

    公开(公告)日:2023-10-12

    申请号:US17967854

    申请日:2022-10-17

    申请人: KLA Corporation

    发明人: Stefan Eyring

    摘要: A simulated tool signal is determined from design data and tool properties of the tool making the measurements. A design-assisted composite signal is determined from measurements. An edge placement uniformity signal is then determined by comparing the simulated tool signal and the design-assisted composite signal. A shape and/or an area of the edge placement uniformity signal can be analyzed. The edge placement uniformity signal enables screening of structures with respect to wafer stochastics without the need to fully characterize all individual structures.

    METHOD AND APPARATUS FOR RECONSTRUCTING ATOMIC SPATIAL DISTRIBUTION AND ELECTRON BEAM FUNCTION

    公开(公告)号:US20230317409A1

    公开(公告)日:2023-10-05

    申请号:US18306985

    申请日:2023-04-25

    摘要: The present disclosure discloses a method, which includes: obtaining, by controlling to move an electron beam to scan a sample, a diffraction intensity of the sample at each scanning position; initializing a sample transmission function and an electron beam function, establishing, based on the diffraction intensity, the sample transmission function, and the electron beam function, a forward propagation model containing to-be-optimized parameters, and calculating a value of a loss function; solving a derivative of the loss function with respect to the to-be-optimized parameters, to obtain gradients of the to-be-optimized parameters in the sample transmission function and the electron beam function, optimizing the to-be-optimized parameters based on the gradients, and updating the value of the loss function; and repeating an iteration process until an iteration termination condition is satisfied, and outputting an optimized sample transmission function and an optimized electron beam function.

    DETERMINING A DEPTH OF A HIDDEN STRUCTURAL ELEMENT BACKGROUND

    公开(公告)号:US20230317407A1

    公开(公告)日:2023-10-05

    申请号:US17709272

    申请日:2022-03-30

    摘要: A method for determining a depth of a hidden structural element of an object, the method may include (i) obtaining contrast information regarding a contrast between (a) hidden structural element detection signals that are indicative of electrons emitted from the hidden structural element, and (b) surroundings detection signals that are indicative of electrons emitted from a surroundings of the hidden structural element; wherein the hidden structural element detection signals and the surroundings detection signals are detected as a result of a scanning of a region of the object, with an illuminating electron beam; wherein the region comprises the hidden structural element and the surroundings; and (ii) determining the depth of the hidden structural element based, at least in part, on the contrast information.