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    THERMOELECTRIC ENERGY CONVERTERS WITH REDUCED INTERFACE LOSSES AND MAUNFACTURING METHOD THEREOF
    25.
    发明申请
    THERMOELECTRIC ENERGY CONVERTERS WITH REDUCED INTERFACE LOSSES AND MAUNFACTURING METHOD THEREOF 审中-公开
    具有减少接口损耗的热电能转换器及其制造方法

    公开(公告)号：US20140360545A1

    公开(公告)日：2014-12-11

    申请号：US14117355

    申请日：2012-05-03

    Applicant: Uttam Ghoshal

    Inventor： Uttam Ghoshal

    IPC: H01L35/32 ,  H01L35/34

    CPC classification number: H01L35/32 ,  H01L35/08 ,  H01L35/18 ,  H01L35/34

    Abstract: The present invention relates to a thermoelement for use in thermoelectric energy converters for power generation as well as cooling applications. The thermoelement includes a thermoelectric layer with a first side and a second side. Further, the thermoelement includes a first high power factor electrode and a second high power factor electrode. The first high power factor electrode is thermally and electrically attached to the first side of the thermoelectric layer and the second high power factor electrode is thermally and electrically attached to the second side of the thermoelectric layer. Furthermore, the thermoelement includes a plurality of metal layers. The plurality of metal layers are attached to the first high power factor electrode and the second high power factor electrode. In an embodiment of the present invention, a thermoelement comprises a plurality of micro thermoelements that are configured to reduce thermal density at the electrodes. In an embodiment of the present disclosure, the thermoelectric layer is hemispherical in shape, wherein the hemispherical thermoelectric layer is deposited in an etched metal layer.

    Abstract translation: 本发明涉及用于发电以及冷却应用的热电能转换器中的热电偶。 热电元件包括​​具有第一侧和第二侧的热电层。 此外，该热电元件包括​​第一高功率因数电极和第二高功率因数电极。 第一高功率因数电极被热电连接到热电层的第一侧，第二高功率因数电极被热电连接到热电层的第二侧。 此外，热电偶包括多个金属层。 多个金属层附接到第一高功率因数电极和第二高功率因数电极。 在本发明的一个实施例中，热电元件包括​​多个微电子元件，其被配置为降低电极处的热密度。 在本公开的一个实施例中，热电层是半球形的，其中半球形热电层沉积在蚀刻的金属层中。

    Methods for high figure-of-merit in nanostructured thermoelectric materials
    27.
    发明授权
    Methods for high figure-of-merit in nanostructured thermoelectric materials 有权
    纳米结构热电材料中高品质因数的方法

    公开(公告)号：US08865995B2

    公开(公告)日：2014-10-21

    申请号：US11949353

    申请日：2007-12-03

    Applicant: Zhifeng Ren ,  Bed Poudel ,  Gang Chen ,  Yucheng Lan ,  Dezhi Wang ,  Qing Hao ,  Mildred Dresselhaus ,  Yi Ma ,  Xiao Yan ,  Xiaoyuan Chen ,  Xiaowei Wang ,  Joshi R. Giri ,  Bo Yu

    Inventor： Zhifeng Ren ,  Bed Poudel ,  Gang Chen ,  Yucheng Lan ,  Dezhi Wang ,  Qing Hao ,  Mildred Dresselhaus ,  Yi Ma ,  Xiao Yan ,  Xiaoyuan Chen ,  Xiaowei Wang ,  Joshi R. Giri ,  Bo Yu

    IPC: H01L35/34 ,  H01L35/16 ,  H01L35/22

    CPC classification number: H01L35/20 ,  H01L35/16 ,  H01L35/18 ,  H01L35/22 ,  H01L35/34

    Abstract: Thermoelectric materials with high figures of merit, ZT values, are disclosed. In many instances, such materials include nano-sized domains (e.g., nanocrystalline), which are hypothesized to help increase the ZT value of the material (e.g., by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries). The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher. Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e.g., via direct current induced hot press) into a new bulk material. Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped. Various compositions and methods relating to aspects of nanostructured thermoelectric materials (e.g., modulation doping) are further disclosed.

    Abstract translation: 公开了具有高品质因数的ZT值的热电材料。 在许多情况下，这样的材料包括纳米尺度的结构域（例如，纳米晶体），其被假定为有助于增加材料的ZT值（例如，通过增加由于界面处的晶界或晶粒/夹杂物边界处的声子散射）。 这种材料的ZT值可以大于约1.2,1.4,1.5,1.8,2甚至更高。 这样的材料可以通过从其中产生纳米颗粒的热电原材料制造，或者可以随后固化（例如，通过直流感应热压机）成为新的散装材料的元件的机械合金纳米颗粒。 起始材料的非限制性实例包括可以合金化，元素化和/或掺杂的铋，铅和/或硅基材料。 进一步公开了与纳米结构的热电材料的方面有关的各种组成和方法（例如，调制掺杂）。

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