公开(公告)号：US20080061250A1

公开(公告)日：2008-03-13

申请号：US11374945

申请日：2006-03-14

申请人： Alexander S. Perel ,  Phil J. Ring ,  Ronald A. Capodilupo ,  Michael A. Graf

发明人： Alexander S. Perel ,  Phil J. Ring ,  Ronald A. Capodilupo ,  Michael A. Graf

IPC分类号： H01J37/317

CPC分类号： H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/221 ,  H01J2237/226 ,  H01J2237/2446 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/24571 ,  H01J2237/30472 ,  H01J2237/30477

摘要： An image monitor system monitors characteristics of an ion beam employed in ion implantation. The monitored characteristics can include particle count, particle information, beam current intensity, beam shape, and the like. The system includes one or more image sensors that capture frames or images along a beam path of an ion beam. An image analyzer analyzes the captured frames to obtain measured characteristics. A controller determines adjustments or corrections according to the measured characteristics and desired beam characteristics.

公开(公告)号：US20070152173A1

公开(公告)日：2007-07-05

申请号：US11712949

申请日：2007-03-02

申请人： Takeshi Shibata ,  Hiroshi Hashimoto ,  Tadahiko Hirakawa ,  Kazuhiko Tonari

发明人： Takeshi Shibata ,  Hiroshi Hashimoto ,  Tadahiko Hirakawa ,  Kazuhiko Tonari

IPC分类号： H01J37/08

CPC分类号： H01J37/3171 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/30455 ,  H01J2237/31703

摘要： An ion implantation apparatus includes an ion irradiation unit. The ion irradiation unit irradiates a plurality of areas of a target substrate with ion beams each of which reaches the substrate at corresponding one incident angle. An incident angle measuring instrument measures the incident angle of each of the ion beams. A controller is provided with information from the incident angle measuring instrument and controls the ion irradiation unit in accordance with the information so that a difference among incident angles is set to within ±0.1°.

公开(公告)号：US20070145298A1

公开(公告)日：2007-06-28

申请号：US11299593

申请日：2005-12-12

申请人： Brian Freer ,  Alexander Perel

发明人： Brian Freer ,  Alexander Perel

IPC分类号： H01J37/08

CPC分类号： H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24578 ,  H01J2237/30472 ,  H01J2237/31703

摘要： Angle of incidence measurements along an axis of ion implantation are obtained by employing positive and negative slot structures. The positive slot structures have entrance openings, exit openings, and slot profiles there between that obtain portion(s) of an ion beam having a selected range of angles in a positive direction. The negative slot structures have entrance openings, exit openings, and slot profiles there between that obtain portion(s) of the ion beam having the selected range of angles in a negative direction. A first beam measurement mechanism measures beam current of the positive portion to obtain a positive angle beam current measurement. A second beam measurement mechanism measures beam current of the negative portion to obtain a negative angle beam current measurement. An analyzer component employs the positive angle beam current measurement and the negative angle beam current measurement to determine a measured angle of incidence.

摘要翻译： 通过采用正和负槽结构，可获得离子注入轴的入射角测量。 正槽结构在其间具有入口开口，出口开口和狭槽轮廓，其在正方向上获得具有选定角度范围的离子束的一部分。 负槽结构在其间具有进入开口，出口开口和狭槽轮廓，其间获得具有在负方向上的选定角度范围的离子束的一部分。 第一光束测量机构测量正部分的光束电流以获得正角度束电流测量。 第二光束测量机构测量负部分的光束电流以获得负角度束电流测量。 分析器组件采用正角度束电流测量和负角度束电流测量来确定测量的入射角。

公开(公告)号：US20060033045A1

公开(公告)日：2006-02-16

申请号：US10917597

申请日：2004-08-13

申请人： Klaus Petry ,  Joseph Ferrara ,  Klaus Becker

发明人： Klaus Petry ,  Joseph Ferrara ,  Klaus Becker

IPC分类号： H01J37/317 ,  H01J37/20

CPC分类号： H01J37/3171 ,  H01J37/20 ,  H01J37/304 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/20235 ,  H01J2237/20242 ,  H01J2237/24528 ,  H01J2237/31703

摘要： Dosimetry systems and methods are also presented for measuring a scanned ion beam at a plurality of points along a curvilinear path at a workpiece location in a process chamber. An illustrated dosimetry system comprises a sensor and a mounting apparatus that supports support the sensor and selectively positions the sensor at a plurality of points along the curvilinear path, wherein the mounting apparatus can selectively position the sensor to point toward a vertex of the scanned ion beam.

摘要翻译： 还提出了测量系统和方法，用于在处理室中的工件位置处沿着曲线路径的多个点处测量扫描离子束。 所示的剂量测定系统包括传感器和安装设备，其支撑传感器并且选择性地将传感器定位在沿着曲线路径的多个点处，其中安装设备可以选择性地将传感器定位成朝向扫描离子束的顶点 。

公开(公告)号：US06828572B2

公开(公告)日：2004-12-07

申请号：US10404493

申请日：2003-04-01

申请人： Ronald N. Reece ,  Michael A. Graf ,  Thomas Parrill ,  Brian S. Freer

发明人： Ronald N. Reece ,  Michael A. Graf ,  Thomas Parrill ,  Brian S. Freer

IPC分类号： G01N2100

CPC分类号： H01J37/3045 ,  H01J37/244 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24528 ,  H01J2237/24578 ,  H01J2237/30455

摘要： The present invention facilitates semiconductor device fabrication by monitoring and correcting angular errors during ion implantation procedures via an incident ion beam angle detector. Additionally, the present invention facilitates semiconductor device fabrication by calibrating a process disk with respect to an incident ion beam without measuring implantation results on wafers prior to an ion implantation process.

摘要翻译： 本发明通过在离子注入过程中通过入射离子束角度检测器监测和校正角误差来促进半导体器件制造。 此外，本发明通过相对于入射离子束校准处理盘而不在离子注入工艺之前在晶片上测量植入结果来促进半导体器件的制造。

公开(公告)号：US20040222390A1

公开(公告)日：2004-11-11

申请号：US10869368

申请日：2004-06-16

申请人： Axcelis Technologies, Inc.

发明人： Joseph Ferrara ,  Robert John Mitchell

IPC分类号： H01J037/20

CPC分类号： H01J37/3171 ,  H01J37/20 ,  H01J2237/20207 ,  H01J2237/20221 ,  H01J2237/24528 ,  H01L21/68764 ,  H01L21/68771

摘要： An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a first rotation member rotatably coupled to the implantation chamber and overlaying an opening in the implantation chamber. The workpiece support structure further includes a second rotation member rotatably coupled to the first rotation member and having a rotating shaft that protrudes through the first member and an axis of rotation offset from an axis of rotation of the first rotation member. The workpiece support structure also includes a third member fixedly attached to the second rotation member that extends into the implantation chamber, the third member including a rotatable drive supporting the workpiece having an axis of rotation offset from the axis of rotation of the first rotation member. The first rotation member, the second rotation member and the rotatable drive of the third rotation member rotate to move the workpiece along a path of travel for implantation of the implantation surface wherein a distance that the ion beam moves through the implantation chamber before striking the implantation surface of the workpiece is constant.

摘要翻译： 离子束注入机包括用于产生沿着束线移动的离子束的离子束源和注入室，其中工件被定位成与离子束相交，用于通过离子束离子注入工件的表面。 离子束注入机还包括耦合到注入室并支撑工件的工件支撑结构。 工件支撑结构包括可旋转地联接到植入室并覆盖植入室中的开口的第一旋转构件。 工件支撑结构还包括第二旋转构件，其可旋转地联接到第一旋转构件并且具有从第一构件突出的旋转轴和从第一旋转构件的旋转轴线偏移的旋转轴。 工件支撑结构还包括固定地附接到第二旋转构件的第三构件，其延伸到注入室中，第三构件包括支撑工件的可旋转驱动装置，其具有偏离第一旋转构件的旋转轴线的旋转轴线。 第一旋转构件，第二旋转构件和第三旋转构件的可旋转驱动器旋转以沿着用于注入植入表面的移动路径移动工件，其中在撞击植入之前离子束移动通过注入室的距离 工件表面是恒定的。

公开(公告)号：US20040021092A1

公开(公告)日：2004-02-05

申请号：US10628170

申请日：2003-07-28

申请人： Axcelis Technologies, Inc.

发明人： Joseph Ferrara

IPC分类号： G01J001/00 ,  G01N021/00

CPC分类号： H01J37/3171 ,  H01J37/20 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/24528 ,  H01L21/68764 ,  H01L21/68771

摘要： An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a first rotation member rotatably coupled to the implantation chamber and including an opening extending through the rotation member and aligned with an opening in a wall of the implantation chamber. The workpiece support structure further includes a second rotation member rotatably coupled to the first rotation member and having an axis of rotation offset from an axis of rotation of the first rotation member, the second rotation member overlying the opening of the first rotation member. The workpiece support structure also includes a third member fixedly attached to the second rotation member, the third member including a rotatable drive supporting the workpiece. The first rotation member, the second rotation member and the rotatable drive of the third rotation member rotate to move the workpiece along a path of travel for implantation of the implantation surface wherein a distance that the ion beam moves through the implantation chamber before striking the implantation surface of the workpiece is constant.

摘要翻译： 离子束注入机包括用于产生沿着束线移动的离子束的离子束源和注入室，其中工件被定位成与离子束相交，用于通过离子束离子注入工件的表面。 离子束注入机还包括耦合到注入室并支撑工件的工件支撑结构。 工件支撑结构包括可旋转地联接到植入室的第一旋转构件，并且包括延伸穿过旋转构件并与植入室的壁中的开口对准的开口。 所述工件支撑结构还包括第二旋转构件，所述第二旋转构件可旋转地联接到所述第一旋转构件并具有偏离所述第一旋转构件的旋转轴线的旋转轴线，所述第二旋转构件覆盖所述第一旋转构件的所述开口。 工件支撑结构还包括固定地附接到第二旋转构件的第三构件，第三构件包括支撑工件的可旋转驱动器。 第一旋转构件，第二旋转构件和第三旋转构件的可旋转驱动器旋转以沿着用于注入植入表面的移动路径移动工件，其中在撞击植入之前离子束移动通过注入室的距离 工件表面是恒定的。

公开(公告)号：US06677598B1

公开(公告)日：2004-01-13

申请号：US10425924

申请日：2003-04-29

申请人： Victor M. Benveniste

发明人： Victor M. Benveniste

IPC分类号： H01J37317

CPC分类号： H01J37/3171 ,  H01J2237/2446 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24542

摘要： The present invention facilitates semiconductor device fabrication by monitoring uniformity of beam current and angle of incidence at various locations throughout an ion beam (e.g., a wider portion of a ribbon beam). One or more uniformity detectors are employed within an ion implantation system (e.g., single wafer based system and/or a multiple wafer based system) and are comprised of a number of elements. The respective elements comprise an aperture that selectively obtains a beamlet from an incident ion beam and a pair of sensors that measure beam current as a function of the incoming angle of the ion beam. The angle of incidence at for particular elements can be determined at least partially from the measured beam current by the pairs of sensors. As a result, generation of an ion beam can be adjusted to improve uniformity as indicated and ion implantation can be performed with an improved uniformity and under tighter process controls.

摘要翻译： 本发明通过监测横跨整个离子束（例如，带束的更宽部分）的各个位置处的束电流和入射角的均匀性来促进半导体器件制造。 在离子注入系统（例如，基于单晶片的系统和/或基于多晶圆的系统）内采用一个或多个均匀性检测器，并且由许多元件组成。 相应的元件包括从入射离子束选择性地获得子束的孔径和一对测量作为离子束的入射角的函数的束流的传感器。 对于特定元件的入射角度可以至少部分地由测量的束电流由传感器对确定。 结果，可以调节离子束的产生以提高所指示的均匀性，并且可以以改进的均匀性和更严格的过程控制来执行离子注入。

公开(公告)号：US09773712B2

公开(公告)日：2017-09-26

申请号：US14956944

申请日：2015-12-02

申请人： Toshiba Memory Corporation

发明人： Takayuki Ito ,  Yasunori Oshima ,  Toshihiko Iinuma

IPC分类号： H01J37/317 ,  H01L21/66 ,  H01L21/265 ,  H01J37/244

CPC分类号： H01L22/26 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24542 ,  H01J2237/31703 ,  H01L21/26513 ,  H01L22/14

摘要： An ion implantation apparatus includes an implantation part, a measuring part, and a controller. The ion implantation part implants ions into an implantation region located at a bottom of a concave portion provided on a semiconductor substrate. The measuring part measures an implantation amount of ions corresponding to an aspect ratio of the concave portion based on ions implanted from the implantation part thereinto, at a first position at which the semiconductor substrate is arranged when the ions are implanted into the implantation region or a second position close to the first position. The controller controls the implantation part to stop implantation of the ions into the measuring part when an accumulated amount of the implantation amount has reached a predetermined amount according to a target accumulation amount of the implantation region.

公开(公告)号：US20170271127A1

公开(公告)日：2017-09-21

申请号：US15461092

申请日：2017-03-16

申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

发明人： Kazuhisa Ishibashi

IPC分类号： H01J37/30 ,  H01J37/317

CPC分类号： H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/24405 ,  H01J2237/24528

摘要： An angle measurement device includes: a slit through which an ion beam is incident, and a width direction of which is orthogonal to a beam traveling direction of the ion beam toward a wafer; and a plurality of electrode bodies which are provided at positions away from the slit in the beam traveling direction, and each of which includes a beam measurement surface that is a region which is exposed to the ion beam having passed through the slit. The plurality of electrode bodies are disposed such that the beam measurement surfaces of the electrode bodies are arranged in order in the width direction of the slit and the beam measurement surfaces adjacent to each other in the width direction of the slit deviate from each other in the beam traveling direction.