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公开(公告)号：US11209505B2
公开(公告)日：2021-12-28
申请号：US16729080
申请日：2019-12-27
Applicant: Western Digital Technologies, Inc.
Inventor： Daniele Mauri , Yuankai Zheng , Lei Wang , Christian Kaiser
Abstract: A method of fabricating a TMR based magnetic sensor in a Wheatstone configuration includes conducting a first anneal of a magnetic tunnel junction (MTJ) and conducting a second anneal of the MTJ. The MTJ includes a first antiferromagnetic (AFM) pinning layer, a pinned layer over the first AFM pinning layer, an anti-parallel coupled layer over the pinned layer, a reference layer over the anti-parallel coupled layer, a barrier layer over the reference layer, a free layer over the barrier layer, and a second antiferromagnetic pinning layer over the free layer. The first anneal of the MTJ sets the first AFM pinning layer, the pinned layer, the free layer, and the second AFM pinning layer in a first magnetization direction. The second anneal of the MTJ resets the free layer and the second AFM pinning layer in a second magnetization direction. An operating field range of the TMR based magnetic sensor is over ±100 Oe.
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22.发明授权公开(公告)号：US11199594B2
公开(公告)日：2021-12-14
申请号：US16728514
申请日：2019-12-27
Applicant: Western Digital Technologies, Inc.
Inventor： Daniele Mauri , Alexander M. Zeltser , Goncalo Baiao De Albuquerque , Yuankai Zheng , Christian Kaiser
Abstract: Embodiments of the present disclosure generally relate to a large field range TMR sensor of magnetic tunnel junctions (MTJs) with a free layer having an intrinsic anisotropy. In one embodiment, a tunnel magnetoresistive (TMR) based magnetic sensor in a Wheatstone configuration includes at least one MTJ. The MTJ includes a free layer having an intrinsic anisotropy produced by deposition at a high oblique angle from normal. Magnetic domain formations within the free layer can be further controlled by a pinned layer canted at an angle to the intrinsic anisotropy of the free layer, by a hard bias element, by shape anisotropy, or combinations thereof.
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公开(公告)号：US11170807B1
公开(公告)日：2021-11-09
申请号：US16909785
申请日：2020-06-23
Applicant: Western Digital Technologies, Inc.
Inventor： Xiaoyong Liu , Goncalo Baiao De Albuquerque , Daniele Mauri , Yukimasa Okada
IPC: G11B5/39
Abstract: The present disclosure generally relates to a read head of a data storage device. The read head includes a read sensor sandwiched between two shields. The shields can have different materials as well as a different number of layers. Furthermore the shields can be fabricated by different processes and have different heights and thicknesses. The ratio of the thickness to the height for the shields are substantially identical to ensure that the saturation field are substantially identical and balanced.
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公开(公告)号：US10720570B2
公开(公告)日：2020-07-21
申请号：US15826578
申请日：2017-11-29
Applicant: Western Digital Technologies, Inc.
Inventor： Quang Le , David John Seagle , Xiaoyong Liu , Daniele Mauri , Yongchul Ahn , Hongquan Jiang , Guangli Liu , David Patrick Druist , Jui-Lung Li
IPC: H01L43/06 , G01R33/07 , G01R33/09 , H01L43/04 , H01L43/14 , G11C11/18 , H01L43/08 , H01L43/10 , G11B5/012 , H01F10/32 , H01L27/22 , G01R33/12 , G11B5/37 , G11B5/39 , G11C11/16
Abstract: Magnetic sensors using spin Hall effect and methods for fabricating same are provided. One such magnetic sensor includes a spin Hall layer including an electrically conductive, non-magnetic material, a magnetic free layer adjacent to the spin Hall layer, a pair of push terminals configured to enable an electrical current to pass through the magnetic free layer and the spin Hall layer in a direction that is perpendicular to a plane of the free and spin Hall layers, and a pair of sensing terminals configured to sense a voltage when the electrical current passes through the magnetic free layer and the spin Hall layer, where each of the push and sensing terminals is electrically isolated from the other terminals.
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公开(公告)号：US11532324B2
公开(公告)日：2022-12-20
申请号：US17184541
申请日：2021-02-24
Applicant: Western Digital Technologies, Inc.
Inventor： Ming Mao , Chen-Jung Chien , Daniele Mauri , Goncalo Marcos Baião De Albuquerque
IPC: G11B5/39
Abstract: The present disclosure generally relates to a read head assembly having a dual free layer (DFL) structure disposed between a first shield and a second shield at a media facing surface. The read head assembly further comprises a rear hard bias (RHB) structure disposed adjacent to the DFL structure recessed from the media facing surface, where an insulation layer separates the RHB structure from the DFL structure. The insulation layer is disposed perpendicularly between the first shield and the second shield. The DFL structure comprises a first free layer and a second free layer having equal stripe heights from the media facing surface to the insulation layer. The RHB structure comprises a seed layer, a bulk layer, and a capping layer. The capping layer and the insulation layer prevent the bulk layer from contacting the second shield.
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Patent Agency Ranking
公开(公告)号：US11428758B2
公开(公告)日：2022-08-30
申请号：US16718351
申请日：2019-12-18
Applicant: Western Digital Technologies, Inc.
Inventor： Chih-Ching Hu , Yung-Hung Wang , Ming Mao , Daniele Mauri , Ming Jiang
Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first and fourth TMR resistors are disposed in a first plane while the second and third TMR resistors are disposed in a second plane different than the first plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction of a free layer.
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公开(公告)号：US11410690B2
公开(公告)日：2022-08-09
申请号：US16899366
申请日：2020-06-11
Applicant: Western Digital Technologies, Inc.
Inventor： Chih-Ching Hu , Yung-Hung Wang , Ming Mao , Guanxiong Li , Daniele Mauri , Xiaoyong Liu , Yukimasa Okada , Anup Roy , Chen-Jung Chien , Hongxue Liu
IPC: G11B5/39
Abstract: The present disclosure generally related to a two dimensional magnetic recording (TDMR) read head having a magnetic tunnel junction (MTJ). Both the upper reader and the lower reader have a dual free layer (DFL) MTJ structure between two shields. A synthetic antiferromagnetic (SAF) soft bias structure bounds the MTJ, and a rear hard bias (RHB) structure is disposed behind the MTJ. The DFL MTJ decreases the distance between the upper and lower reader and hence, improves the area density capacity (ADC). Additionally, the SAF soft bias structures and the rear head bias structure cause the dual free layer MTJ to have a scissor state magnetic moment at the media facing surface (MFS).
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公开(公告)号：US11385305B2
公开(公告)日：2022-07-12
申请号：US16718667
申请日：2019-12-18
Applicant: Western Digital Technologies, Inc.
Inventor： Yuankai Zheng , Christian Kaiser , Zhitao Diao , Chih-Ching Hu , Chen-Jung Chien , Yung-Hung Wang , Dujiang Wan , Ronghui Zhou , Ming Mao , Ming Jiang , Daniele Mauri
Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR sensors. The TMR sensor device comprises a first resistor comprising a first TMR film, a second resistor comprising a second TMR film different than the first TMR film, a third resistor comprising the second TMR film, and a fourth resistor comprising the first TMR film. The first TMR film comprises a reference layer having a first magnetization direction anti-parallel to a second magnetization direction of a pinned layer. The second TMR film comprises a reference layer having a first magnetization direction parallel to a second magnetization direction of a first pinned layer, and a second pinned layer having a third magnetization direction anti-parallel to the first magnetization direction of the reference layer and the second magnetization direction of the first pinned layer.
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公开(公告)号：US11275130B2
公开(公告)日：2022-03-15
申请号：US16912500
申请日：2020-06-25
Applicant: Western Digital Technologies, Inc.
Inventor： Xiaoyong Liu , Quang Le , Zhigang Bai , Daniele Mauri , Zhanjie Li , Kuok San Ho , Thao A. Nguyen , Rajeev Nagabhirava
Abstract: The present disclosure generally relates to sensor device, such as a magnetic sensor bridge, that utilizes a dual free layer (DFL) structure. The device includes a plurality of resistors that each includes the same DFL structure. Adjacent the DFL structure is a magnetic structure that can include a permanent magnet, an antiferromagnetic (AFM) layer having a synthetic AFM (SAF) structure thereon, a permanent magnetic having a SAF structure thereon, or an AFM layer having a ferromagnetic layer thereon. The DFL structures are aligned with different layers of the magnetic structures to differentiate the resistors. The different alignment and/or different magnetic structures result in a decrease in production time due to reduced complexity and, thus, reduces costs.
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公开(公告)号：US11170806B2
公开(公告)日：2021-11-09
申请号：US16879601
申请日：2020-05-20
Applicant: Western Digital Technologies, Inc.
Inventor： Yuankai Zheng , Ming Mao , Daniele Mauri , Chih-Ching Hu , Chen-Jung Chien
Abstract: The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR films. Each resistor has identical TMR films. The TMR films of two resistors have reference layers that have an antiparallel magnetic orientation relative to the TMR films of the other two resistors. To ensure the antiparallel magnetic orientation, the TMR films are all formed simultaneously and annealed in a magnetic field simultaneously. Thereafter, the TMR films of two resistors are annealed a second time in a magnetic field while the TMR films of the other two resistors are not annealed a second time.
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