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    Magnetic sensor array with one TMR stack having two free layers
    2.
    发明授权
    Magnetic sensor array with one TMR stack having two free layers 有权

    公开(公告)号：US11415645B2

    公开(公告)日：2022-08-16

    申请号：US16730746

    申请日：2019-12-30

    Applicant: Western Digital Technologies, Inc.

    Inventor： Yuankai Zheng ,  Christian Kaiser ,  Zhitao Diao ,  Chih-Ching Hu ,  Chen-jung Chien ,  Yung-Hung Wang ,  Ming Mao ,  Ming Jiang

    IPC: G11B5/39 ,  G01R33/09 ,  G01R17/10 ,  H01L43/08

    Abstract: The present disclosure generally relates to a Wheatstone bridge array comprising TMR sensors and a method of fabrication thereof. In the Wheatstone bridge array, there are four distinct TMR sensors. The TMR sensors are all fabricated simultaneously to create four identical TMR sensors that have synthetic antiferromagnetic free layers as the top layer. The synthetic antiferromagnetic free layers comprise a first magnetic layer, a spacer layer, and a second magnetic layer. After forming the four identical TMR sensors, the spacer layer and the second magnetic layer are removed from two TMR sensors. Following the removal of the spacer layer and the second magnetic layer, a new magnetic layer is formed on the now exposed first magnetic layer such that the new magnetic layer has substantially the same thickness as the spacer layer and second magnetic layer combined.

    DUAL FREE LAYER READ HEAD HAVING RECESSED SIDEWALL INSULATOR LAYER AND METHOD OF MAKING THEREOF
    5.
    发明申请
    DUAL FREE LAYER READ HEAD HAVING RECESSED SIDEWALL INSULATOR LAYER AND METHOD OF MAKING THEREOF 有权

    公开(公告)号：US20240404552A1

    公开(公告)日：2024-12-05

    申请号：US18233800

    申请日：2023-08-14

    Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.

    Inventor： Chih-Ching Hu ,  Yung-Hung Wang ,  Ming Mao ,  Ming Jiang ,  Yukimasa Okada ,  Goncalo Baiao de Albuquerque

    IPC: G11B5/39

    Abstract: A two-dimensional magnetic recording (TDMR) read head includes a lower reader and an upper reader. Each of the lower reader and the upper reader may have a dual free layer (DFL) magnetic tunnel junction structure having first and second free layers located between lower and upper shields. A synthetic antiferromagnetic (SAF) structure is located on a side of each magnetic tunnel junction. A sidewall insulating layer is located between the lower soft bias layer of the SAF structure and the first free layer. The sidewall insulating layer can have a reduced height such that an upper soft bias layer of the SAF structure is in direct contact with a sidewall of the second free layer, or the upper portion of the sidewall insulating layer located between the upper soft bias layer of the SAF structure and the sidewall of the second free layer has a reduced thickness.

    Planar design for sensors in a dual free layer read head
    6.
    发明授权
    Planar design for sensors in a dual free layer read head 有权

    公开(公告)号：US11514934B1

    公开(公告)日：2022-11-29

    申请号：US17512216

    申请日：2021-10-27

    Applicant: Western Digital Technologies, Inc.

    Inventor： Ming Mao ,  Chen-Jung Chien ,  Daniele Mauri ,  Goncalo Marcos Baião De Albuquerque ,  Chih-Ching Hu ,  Anup Ghosh Roy ,  Yung-Hung Wang

    IPC: G11B5/39 ,  G11B5/11

    Abstract: The present disclosure generally relates to a dual free layer (DFL) two dimensional magnetic recording (TDMR) read head. The read head comprises a first sensor, a first rear hard bias (RHB) structure disposed adjacent to the first sensor, an upper shield disposed over the first sensor and first RHB structure, a lower shield disposed over the upper shield, a second sensor disposed over the lower shield, and a second RHB structure disposed adjacent to the second sensor. A first surface of the first sensor is substantially flush or aligned with a first surface of the first RHB structure. A first surface of the second sensor is substantially flush or aligned with a first surface of the second RHB structure. The upper shield extends linearly from a media facing surface into the read head. The first lower shield is over-milled a greater amount of time than the second lower shield.

    Magnetic sensor bias point adjustment method
    7.
    发明授权
    Magnetic sensor bias point adjustment method 有权

    公开(公告)号：US11169226B2

    公开(公告)日：2021-11-09

    申请号：US16730726

    申请日：2019-12-30

    Applicant: Western Digital Technologies, Inc.

    Inventor： Yung-Hung Wang ,  Chih-Ching Hu ,  Carlos Corona

    IPC: G11B5/39 ,  G01R33/09 ,  H01F10/32 ,  H01F41/32

    Abstract: The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different amount of TMR structures as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.

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