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公开(公告)号：US11493573B2
公开(公告)日：2022-11-08
申请号：US16718346
申请日：2019-12-18
Applicant: Western Digital Technologies, Inc.
Inventor： Chih-Ching Hu , Yung-Hung Wang , Ann Lorraine Carvajal , Ming Mao , Chen-Jung Chien , Yuankai Zheng , Ronghui Zhou , Dujiang Wan , Carlos Corona , Daniele Mauri , Ming Jiang
Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes four or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first, second, third, and fourth TMR resistors are disposed in the same plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to the magnetization of a free layer, but opposite to the magnetization direction of the reference layer of the first TMR film.
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公开(公告)号：US11415645B2
公开(公告)日：2022-08-16
申请号：US16730746
申请日：2019-12-30
Applicant: Western Digital Technologies, Inc.
Inventor： Yuankai Zheng , Christian Kaiser , Zhitao Diao , Chih-Ching Hu , Chen-jung Chien , Yung-Hung Wang , Ming Mao , Ming Jiang
Abstract: The present disclosure generally relates to a Wheatstone bridge array comprising TMR sensors and a method of fabrication thereof. In the Wheatstone bridge array, there are four distinct TMR sensors. The TMR sensors are all fabricated simultaneously to create four identical TMR sensors that have synthetic antiferromagnetic free layers as the top layer. The synthetic antiferromagnetic free layers comprise a first magnetic layer, a spacer layer, and a second magnetic layer. After forming the four identical TMR sensors, the spacer layer and the second magnetic layer are removed from two TMR sensors. Following the removal of the spacer layer and the second magnetic layer, a new magnetic layer is formed on the now exposed first magnetic layer such that the new magnetic layer has substantially the same thickness as the spacer layer and second magnetic layer combined.
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公开(公告)号：US11169228B2
公开(公告)日：2021-11-09
申请号：US16730784
申请日：2019-12-30
Applicant: Western Digital Technologies, Inc.
Inventor： Yung-Hung Wang , Daniele Mauri , Ming Mao , Chen-jung Chien , Yuankai Zheng , Chih-Ching Hu , Carlos Corona , Matthew Stevenson , Ming Jiang
Abstract: The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of tunneling magnetoresistance (TMR) structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures each have an additional non-TMR resistor as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.
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公开(公告)号：US11169227B2
公开(公告)日：2021-11-09
申请号：US16730777
申请日：2019-12-30
Applicant: Western Digital Technologies, Inc.
Inventor： Chih-Ching Hu , Yung-Hung Wang , Yuankai Zheng , Chen-jung Chien , Ming Mao , Daniele Mauri , Ming Jiang
Abstract: The present disclosure generally relates to a Wheatstone bridge that includes a plurality of resistors comprising dual free layer (DFL) TMR structures. The DFL TMR structures include one or more hard bias structures on the side of DLF. Additionally, one or more soft bias structures may also be present on a side of the DFL. Two resistors will have identical hard bias material while two other resistors will have hard bias material that is identical to each other, yet different when compared to the first two resistors. The hard bias materials will provide opposite magnetizations that will provide opposite bias fields that result in two different magnetoresistance responses for the DFL TMR.
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5.发明申请公开(公告)号：US20240404552A1
公开(公告)日：2024-12-05
申请号：US18233800
申请日：2023-08-14
Applicant: WESTERN DIGITAL TECHNOLOGIES, INC.
Inventor： Chih-Ching Hu , Yung-Hung Wang , Ming Mao , Ming Jiang , Yukimasa Okada , Goncalo Baiao de Albuquerque
IPC: G11B5/39
Abstract: A two-dimensional magnetic recording (TDMR) read head includes a lower reader and an upper reader. Each of the lower reader and the upper reader may have a dual free layer (DFL) magnetic tunnel junction structure having first and second free layers located between lower and upper shields. A synthetic antiferromagnetic (SAF) structure is located on a side of each magnetic tunnel junction. A sidewall insulating layer is located between the lower soft bias layer of the SAF structure and the first free layer. The sidewall insulating layer can have a reduced height such that an upper soft bias layer of the SAF structure is in direct contact with a sidewall of the second free layer, or the upper portion of the sidewall insulating layer located between the upper soft bias layer of the SAF structure and the sidewall of the second free layer has a reduced thickness.
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Patent Agency Ranking
公开(公告)号：US11514934B1
公开(公告)日：2022-11-29
申请号：US17512216
申请日：2021-10-27
Applicant: Western Digital Technologies, Inc.
Inventor： Ming Mao , Chen-Jung Chien , Daniele Mauri , Goncalo Marcos Baião De Albuquerque , Chih-Ching Hu , Anup Ghosh Roy , Yung-Hung Wang
Abstract: The present disclosure generally relates to a dual free layer (DFL) two dimensional magnetic recording (TDMR) read head. The read head comprises a first sensor, a first rear hard bias (RHB) structure disposed adjacent to the first sensor, an upper shield disposed over the first sensor and first RHB structure, a lower shield disposed over the upper shield, a second sensor disposed over the lower shield, and a second RHB structure disposed adjacent to the second sensor. A first surface of the first sensor is substantially flush or aligned with a first surface of the first RHB structure. A first surface of the second sensor is substantially flush or aligned with a first surface of the second RHB structure. The upper shield extends linearly from a media facing surface into the read head. The first lower shield is over-milled a greater amount of time than the second lower shield.
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公开(公告)号：US11169226B2
公开(公告)日：2021-11-09
申请号：US16730726
申请日：2019-12-30
Applicant: Western Digital Technologies, Inc.
Inventor： Yung-Hung Wang , Chih-Ching Hu , Carlos Corona
Abstract: The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different amount of TMR structures as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.
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公开(公告)号：US11201280B2
公开(公告)日：2021-12-14
申请号：US16730771
申请日：2019-12-30
Applicant: Western Digital Technologies, Inc.
Inventor： Ronghui Zhou , Ming Mao , Ming Jiang , Yuankai Zheng , Chen-jung Chien , Yung-Hung Wang , Chih-Ching Hu
Abstract: A Wheatstone bridge array comprising a tunneling magnetoresistive (TMR) sensor and a method for manufacturing is disclosed. The bottom lead for the TMR sensor has a very small surface roughness due to not only chemical mechanical planarization (CMP) but also due to forming the bottom lead from multiple layers. The multiple layers include at least a bottom first metal layer and a top second metal layer disposed on the first metal layer. The second metal layer generally has a lower surface roughness than the first metal layer. Additionally, the second metal layer has a slower polishing rate. Therefore, not only does the second metal layer reduce the surface roughness simply be being present, but the slower polishing rate enables the top second metal film to be polished to a very fine surface roughness of less than or equal to ˜2 Angstroms.
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9.发明授权公开(公告)号：US10249329B1
公开(公告)日：2019-04-02
申请号：US15820229
申请日：2017-11-21
Applicant: Western Digital Technologies, Inc.
Inventor： Chih-Ching Hu , Yuankai Zheng , Yung-Hung Wang
IPC: G11B5/39
Abstract: A current perpendicular-to-the-plane magnetoresistive (CPP-MR) sensor for a magnetic recording medium has a substantially wedge-shaped free ferromagnetic layer. The free layer thickness is tapered from the back edge (the edge recessed from the medium-facing surface) to the front edge at the medium-facing surface. The thinner free layer front edge thickness reduces the read gap (the spacing between the two sensor magnetic shields), which improves the resolution of the sensor, which in turn allows the bits to be placed closer together in the along-the-track direction. The free layer is thicker at the back edge so the volume of free layer ferromagnetic material can be maintained at the level required for high amplitude of the readback signal.
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公开(公告)号：US12106787B1
公开(公告)日：2024-10-01
申请号：US18229096
申请日：2023-08-01
Applicant: Western Digital Technologies, Inc.
Inventor： Yung-Hung Wang , Chih-Ching Hu , Hongxue Liu , Guanxiong Li , Chen-Jung Chien , Ming Mao , Ming Jiang
IPC: G11B5/39
CPC classification number: G11B5/3932
Abstract: The present disclosure generally relate to a read head and methods of forming thereof. Upon forming a dual free layer (DFL) sensor and a rear hard bias (RHB) structure on a seed layer, a photoresist is deposited on the DFL read head and the RHB structure. A refill layer is deposited on the photoresist and the seed layer adjacent to the DFL sensor and the RHB structure. Portions of the refill layer disposed on one or more sidewalls of the photoresist are removed, and a SiOx cap layer is deposited on the refill layer and on the one or more sidewalls. The photoresist is removed, and the SiOx cap layer and top surfaces of the DFL sensor and the RHB structure are planarized to form a substantially flat topography. The SiOx cap layer acts as a stop layer for the refill layer, and remains in the finished read head.
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