公开(公告)号：US20190067478A1

公开(公告)日：2019-02-28

申请号：US15692471

申请日：2017-08-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Feng-Ching CHU ,  Wei-Yang LEE ,  Feng-Cheng YANG ,  Yen-Ming CHEN

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/161 ,  H01L29/165 ,  H01L29/24 ,  H01L29/267 ,  H01L29/167 ,  H01L23/535 ,  H01L21/8238

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base and a first fin structure over the base. The semiconductor device structure includes an isolation layer over the base. The first fin structure is partially in the isolation layer. The semiconductor device structure includes a first gate structure over and across the first fin structure. The semiconductor device structure includes a first source structure and a first drain structure on the first fin structure and on two opposite sides of the first gate structure. The first source structure and the first drain structure are made of an N-type conductivity material. The semiconductor device structure includes a cap layer covering the first source structure and the first drain structure. The cap layer is doped with a Group IIIA element.

公开(公告)号：US20180138172A1

公开(公告)日：2018-05-17

申请号：US15353933

申请日：2016-11-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ting-Yeh CHEN ,  Wei-Yang LEE ,  Han-Wei WU ,  Feng-Cheng YANG

IPC: H01L27/088 ,  H01L27/02 ,  H01L29/08 ,  H01L29/10 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/41791

Abstract: A semiconductor component includes a substrate having a dense zone and a less-dense zone, at least one first FinFET device disposed on the dense zone, and at least one second FinFET device disposed on the less-dense zone, in which a width of a first source/drain region of the first FinFET device is smaller than a width of a second source/drain region of the second FinFET device.

公开(公告)号：US20170256456A1

公开(公告)日：2017-09-07

申请号：US15061609

申请日：2016-03-04

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Yang LEE ,  Feng-Cheng YANG ,  Ting-Yeh CHEN

IPC: H01L21/8234 ,  H01L29/08 ,  H01L21/308 ,  H01L27/088

CPC classification number: H01L21/823431 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/823425 ,  H01L27/0886 ,  H01L29/0847 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device includes an isolation layer disposed over a substrate, first and second fin structures, a gate structure, a source/drain structure and a dielectric layer disposed on an upper surface of the isolation insulating layer. Both the first fin structure and the second fin structure are disposed over the substrate, and extend in a first direction in plan view. The gate structure is disposed over parts of the first and second fin structures, and extends in a second direction crossing the first direction. The first and second fin structures not covered by the gate structure are recessed below the upper surface of the isolation insulating layer. The source/drain structure is formed over the recessed first and second fin structures. A void is formed between the source/drain structure and the dielectric layer.