公开(公告)号：US20220013461A1

公开(公告)日：2022-01-13

申请号：US16924201

申请日：2020-07-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hung Lin ,  An-Jhih Su ,  Der-Chyang Yeh ,  Shih-Guo Shen ,  Chia-Nan Yuan ,  Ming-Shih Yeh

IPC: H01L23/538 ,  H01L23/31 ,  H01L25/065 ,  H01L25/00 ,  H01L21/48

Abstract: A semiconductor device includes a bridge and a plurality of dies. The bridge is free of active devices and includes a substrate, an interconnect structure, a redistribution layer structure and a plurality of conductive connectors. The interconnect structure includes at least one dielectric layer and a plurality of first conductive features in the at least one dielectric layer. The redistribution layer structure includes at least one polymer layer and a plurality of second conductive features in the at least one polymer layer, wherein a sidewall of the interconnect structure is substantially flush with a sidewall of the redistribution layer structure. The conductive connectors are electrically connected to one another by the redistribution layer structure and the interconnect structure. The bridge electrically connects the plurality of dies.

公开(公告)号：US20210118807A1

公开(公告)日：2021-04-22

申请号：US17113318

申请日：2020-12-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hung Lin ,  Chi-Wen Liu ,  Horng-Huei Tseng

IPC: H01L23/532 ,  H01L23/535 ,  H01L21/768 ,  H01L21/285 ,  H01L23/485 ,  H01L29/417 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/092 ,  H01L27/12 ,  H01L29/78 ,  H01L21/3065 ,  H01L23/528

Abstract: A semiconductor device includes a semiconductor substrate, a contact region present in the semiconductor substrate, and a silicide present on a textured surface of the contact region. A plurality of sputter ions is present between the silicide and the contact region. Since the surface of the contact region is textured, the contact area provided by the silicide is increased accordingly, thus the resistance of an interconnection structure in the semiconductor device is reduced.

公开(公告)号：US20210050254A1

公开(公告)日：2021-02-18

申请号：US17086754

申请日：2020-11-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hung Lin ,  Sheng-Hsuan Lin ,  Chih-Wei Chang ,  You-Hua Chou

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/285 ,  H01L23/485 ,  H01L23/522

Abstract: A semiconductor device and method of formation are provided. The semiconductor device comprises a silicide layer over a substrate, a metal plug in an opening defined by a dielectric layer over the substrate, a first metal layer between the metal plug and the dielectric layer and between the metal plug and the silicide layer, a second metal layer over the first metal layer, and an amorphous layer between the first metal layer and the second metal layer.

公开(公告)号：US20180026031A1

公开(公告)日：2018-01-25

申请号：US15714226

申请日：2017-09-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： I-Tseng Chen ,  Hon-Lin Huang ,  Chun-Hsien Huang ,  Yu-Hung Lin

IPC: H01L27/06 ,  H01L21/02 ,  H01L21/8234 ,  H01L49/02

CPC classification number: H01L27/0629 ,  H01L21/02271 ,  H01L21/823437 ,  H01L28/20

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate. The method includes transferring the substrate from a stage to a deposition chamber, and no heating operation is performed on the stage. The method also includes depositing a resistor layer on the substrate. The resistor layer may have a major structure that is amorphous.

公开(公告)号：US20210327814A1

公开(公告)日：2021-10-21

申请号：US17359083

申请日：2021-06-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hung Lin ,  Chi-Wen Liu ,  Horng-Huei Tseng

IPC: H01L23/535 ,  H01L21/768 ,  H01L23/532 ,  H01L21/285 ,  H01L29/66 ,  H01L29/417 ,  H01L27/092 ,  H01L29/786 ,  H01L21/8238 ,  H01L29/08

Abstract: A semiconductor device includes a semiconductor substrate comprising a contact region, a silicide present on the contact region, a dielectric layer present on the semiconductor substrate, the dielectric layer comprising an opening to expose a portion of the contact region, a conductor present in the opening, a barrier layer present between the conductor and the dielectric layer, and a metal layer present between the barrier layer and the dielectric layer, wherein a Si concentration of the silicide is varied along a height of the silicide.

公开(公告)号：US10861791B2

公开(公告)日：2020-12-08

申请号：US16416454

申请日：2019-05-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hung Lin ,  Chi-Wen Liu ,  Horng-Huei Tseng

IPC: H01L23/48 ,  H01L23/52 ,  H01L23/40 ,  H01L23/532 ,  H01L23/535 ,  H01L21/768 ,  H01L21/285 ,  H01L23/485 ,  H01L29/417 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/092 ,  H01L27/12 ,  H01L29/78 ,  H01L21/3065 ,  H01L23/528

Abstract: A semiconductor device includes a semiconductor substrate, a contact region present in the semiconductor substrate, and a silicide present on a textured surface of the contact region. A plurality of sputter ions is present between the silicide and the contact region. Since the surface of the contact region is textured, the contact area provided by the silicide is increased accordingly, thus the resistance of a interconnection structure in the semiconductor device is reduced.

公开(公告)号：US10276561B2

公开(公告)日：2019-04-30

申请号：US15714226

申请日：2017-09-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： I-Tseng Chen ,  Hon-Lin Huang ,  Chun-Hsien Huang ,  Yu-Hung Lin

IPC: H01L27/06 ,  H01L21/8234 ,  H01L21/02 ,  H01L49/02

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate. The method includes transferring the substrate from a stage to a deposition chamber, and no heating operation is performed on the stage. The method also includes depositing a resistor layer on the substrate. The resistor layer may have a major structure that is amorphous.

公开(公告)号：US09576908B1

公开(公告)日：2017-02-21

申请号：US14993024

申请日：2016-01-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Hung Lin ,  Chi-Wen Liu ,  Horng-Huei Tseng

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/535 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/53209 ,  H01L21/28518 ,  H01L21/3065 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76877 ,  H01L21/76886 ,  H01L21/76889 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/528 ,  H01L23/53266 ,  H01L23/535 ,  H01L29/41791

Abstract: A semiconductor device includes a semiconductor substrate, a contact region present in the semiconductor substrate, and a silicide present on a textured surface of the contact region. A plurality of sputter ions are present between the silicide and the contact region. Since the surface of the contact region is textured, the contact area provided by the silicide is increased accordingly, thus the resistance of a interconnection structure in the semiconductor device is reduced.

Abstract translation: 半导体器件包括半导体衬底，存在于半导体衬底中的接触区域和存在于接触区域的纹理表面上的硅化物。 在硅化物和接触区域之间存在多个溅射离子。 由于接触区域的表面是纹理化的，所以由硅化物提供的接触面积相应地增加，因此减小了半导体器件中互连结构的电阻。