Abstract:
A spectrometer cell can include a spacer, at least one end cap, and at least one mirror with a reflective surface. The end cap can be positioned proximate to a first contact end of the spacer such that the end cap and spacer at least partially enclose an internal volume of the spectrometer cell. The mirror can be secured in place by a mechanical attachment that includes attachment materials that are chemically inert to at least one reactive gas compound. The mechanical attachment can hold an optical axis of the reflective surface in a fixed orientation relative to other components of the spectrometer cell and or a spectrometer device that comprises the spectrometer cell. The mirror can optionally be constructed of a material such as stainless steel, ceramic, or the like. Related methods, articles of manufacture, systems, and the like are described.
Abstract:
A spectrometer includes a light source that emits a beam into a sample volume comprising an absorbing medium. Thereafter, at least one detector detects at least a portion of the beam emitted by the light source. It is later determined, based on the detected at least a portion of the beam and by a controller, that a position and/or an angle of the beam should be changed. The beam emitted by the light source is then actively steered by an actuation element under control of the controller. In addition, a concentration of the absorbing media can be quantified or otherwise calculated (using the controller or optionally a different processor that can be local or remote). The actuation element(s) can be coupled to one or more of the light source, a detector or detectors, and a reflector or reflectors intermediate the light source and the detector(s).
Abstract:
A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness. A barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.
Abstract:
A reference harmonic absorption curve of a laser absorption spectrometer can have a reference curve shape derived from a reference signal generated by the detector in response to light passing from the laser light source through a reference gas or gas mixture. The reference gas or gas mixture can include one or more of a target analyte and a background gas expected to be present during analysis of the target analyte. A test harmonic absorption curve having a test curve shape is compared with the reference harmonic absorption curve to detect a difference between the test curve shape and the reference curve shape. Operating and/or analytical parameters of the laser absorption spectrometer are adjusted to correct the test curve shape to reduce the difference between the test curve shape and the reference curve shape.
Abstract:
A spectrometer cell can include a spacer, at least one end cap, and at least one mirror with a reflective surface. The end cap can be positioned proximate to a first contact end of the spacer such that the end cap and spacer at least partially enclose an internal volume of the spectrometer cell. The mirror can be secured in place by a mechanical attachment that includes attachment materials that are chemically inert to at least one reactive gas compound. The mechanical attachment can hold an optical axis of the reflective surface in a fixed orientation relative to other components of the spectrometer cell and or a spectrometer device that comprises the spectrometer cell. The mirror can optionally be constructed of a material such as stainless steel, ceramic, or the like. Related methods, articles of manufacture, systems, and the like are described.
Abstract:
A reference harmonic absorption curve of a laser absorption spectrometer can have a reference curve shape derived from a reference signal generated by the detector in response to light passing from the laser light source through a reference gas or gas mixture. The reference gas or gas mixture can include one or more of a target analyte and a background gas expected to be present during analysis of the target analyte. A test harmonic absorption curve having a test curve shape is compared with the reference harmonic absorption curve to detect a difference between the test curve shape and the reference curve shape. Operating and/or analytical parameters of the laser absorption spectrometer are adjusted to correct the test curve shape to reduce the difference between the test curve shape and the reference curve shape.
Abstract:
A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness. A barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.
Abstract:
An optical head assembly for use in a spectrometer is provided that is configured to characterize one or more constituents within a sample gas. The assembly includes a thermoelectric cooler (TEC) having a cold side on one end and a hot side on an opposite end, a cold plate in thermal communication with the cold side of the TEC, a hot block in thermal communication with the hot side of the TEC, a light source in thermal communication with the cold plate such that a change in temperature of the TEC causes one or more properties of the light source (e.g., wavelength, etc.) to change, and an optical element in thermal communication with the cold plate positioned to collimate light emitted by the light source through the sample gas (such that properties of the optical element vary based on a change in temperature of the TEC).
Abstract:
At least one light source is configured to emit at least one beam into a sample volume of an absorbing medium. In addition, at least one detector is positioned to detect at least a portion of the beam emitted by the at least one light source. Further, at least one beam modification element is positioned between the at least one detector and the at least one light source to selectively change at least one of (i) a power intensity of, or (ii) a shape of the beam emitted by the at least one light source as detected by the at least one detector. A control circuit is coupled to the beam modification element. Related apparatus methods, articles of manufacture, systems, and the like are described.
Abstract:
A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness. A barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.