公开(公告)号：US4179324A

公开(公告)日：1979-12-18

申请号：US855418

申请日：1977-11-28

Applicant: Allen R. Kirkpatrick

Inventor： Allen R. Kirkpatrick

IPC: H01L21/683 ,  H01L23/15 ,  B32B31/00

CPC classification number: H01L21/6833 ,  H01L23/15 ,  H01L2924/0002

Abstract: A semiconductor thin film and glass stratum laminate is formed by depositing a semiconductor thin film onto a temporary substrate having a carbon coating to which the film adheres. Processing of the semiconductor thin film for selected performance characteristics is accomplished while the film is affixed to the temporary substrate. The processed thin film is transferred and electrostatically bonded to the glass stratum by exposure to a thermal environment at or below the softening point of the glass stratum and by application of an electric potential across the thin film and glass. The bonded thin film and glass stratum laminate is separated from the temporary substrate.

Abstract translation: 通过将半导体薄膜沉积到具有膜附着到其上的碳涂层的临时衬底上来形成半导体薄膜和玻璃层层压体。 当膜固定到临时衬底时，完成用于所选性能特性的半导体薄膜的处理。 处理的薄膜通过暴露于玻璃层的软化点处或低于玻璃层的软化点的热环境并通过在薄膜和玻璃上施加电位而被转移并静电地结合到玻璃层。 将粘合的薄膜和玻璃层层压板与临时基板分离。

公开(公告)号：US20080245974A1

公开(公告)日：2008-10-09

申请号：US12142453

申请日：2008-06-19

Applicant: Allen R. Kirkpatrick ,  Sean Kirkpatrick ,  Martin D. Tabat ,  Thomas G. Tetreault ,  John O. Borland ,  John J. Hautala ,  Wesley J. Skinner

Inventor： Allen R. Kirkpatrick ,  Sean Kirkpatrick ,  Martin D. Tabat ,  Thomas G. Tetreault ,  John O. Borland ,  John J. Hautala ,  Wesley J. Skinner

IPC: H01J37/08

CPC classification number: H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0812 ,  H01L21/223 ,  H01L21/26513 ,  H01L21/2656 ,  H01L21/26566 ,  H01L21/2658 ,  H01L21/324

Abstract: Method of infusing or introducing material into a substrate using a gas cluster ion beam. The method includes maintaining a reduced-pressure environment around a substrate holder and holding a substrate securely within that reduced-pressure environment. A gas-cluster ion beam formed from a pressurized gas mixture including an inert gas and at least one other atomic or molecular specie is provided to the reduced-pressure environment and accelerated. In one embodiment, the method includes irradiating the accelerated gas-cluster ion beam onto one or more surface portions of the substrate to form an infused region or gas-cluster ion-impact region therein by introducing part or all of the atomic or molecular specie into the surface. In another embodiment, the method includes modifying at least one electrical property of the surface of the substrate by irradiating the accelerated gas-cluster ion beam onto one or more surface portions of the substrate.

Abstract translation: 使用气体团簇离子束将材料注入或引入衬底的方法。 该方法包括保持围绕衬底保持器的减压环境并将衬底牢固地保持在该减压环境内。 将由包含惰性气体和至少一种其它原子或分子物质的加压气体混合物形成的气体簇离子束提供给减压环境并加速。 在一个实施例中，该方法包括将加速的气体团簇离子束照射到衬底的一个或多个表面部分上，以通过将部分或全部原子或分子物质引入到其中来形成输入区域或气体团簇离子冲击区域 表面。 在另一个实施方案中，该方法包括通过将加速的气体 - 团簇离子束照射到衬底的一个或多个表面部分来修饰衬底的表面的至少一个电性质。

公开(公告)号：US06676989B2

公开(公告)日：2004-01-13

申请号：US09901204

申请日：2001-07-09

Applicant: Allen R. Kirkpatrick ,  Robert K. Becker ,  Avrum Freytsis

Inventor： Allen R. Kirkpatrick ,  Robert K. Becker ,  Avrum Freytsis

IPC: B05D300

CPC classification number: C23F3/00 ,  A61F2/91 ,  H01J2237/0812

Abstract: Numerous studies suggest that the current popular designs of coronary stents are functionally equivalent and suffer a 16 to 22 percent rate of restenosis. Although the use of coronary stents is growing, the benefits of their use remain controversial in certain clinical situations or indications due to their potential complications. The application of gas cluster ion beam (GCIB) surface modification such as smoothing or cleaning appears to reduce these complications and lead to genuine cost savings and an improvement in patient quality of life. The present invention is directed to the use of GCIB surface modification to overcome prior problems of thrombosis and restenosis. The atomic level surface smoothing of stents utilizing GCIB substantially reduces undesirable surface micro-roughness in medical coronary stents.

Abstract translation: 许多研究表明，目前流行的冠状动脉支架设计在功能上是相当的，并且再狭窄率为16％至22％。 虽然冠状动脉支架的使用正在增长，但由于其潜在的并发症，其使用的益处在某些临床情况或适应证中仍然存在争议。 气体簇离子束（GCIB）表面改性（如平滑或清洁）的应用似乎可以减少这些并发症，并导致真正的成本节约和改善患者的生活质量。 本发明涉及使用GCIB表面修饰来克服血栓形成和再狭窄的先前问题。 使用GCIB的支架的原子水平表面平滑化大大降低了医疗冠状动脉支架中不期望的表面微粗糙度。

公开(公告)号：US5082359A

公开(公告)日：1992-01-21

申请号：US442121

申请日：1989-11-28

Applicant: Allen R. Kirkpatrick

Inventor： Allen R. Kirkpatrick

IPC: C23C16/02 ,  C23C16/27 ,  C30B25/02 ,  C30B25/18 ,  G02B1/10

CPC classification number: G02B1/105 ,  C23C16/0227 ,  C23C16/0263 ,  C23C16/0272 ,  C23C16/271 ,  C30B25/02 ,  C30B25/18 ,  C30B29/04 ,  Y10T428/30

Abstract: A method of forming a polycrystalline film, such as a diamond, on a foreign substrate involves preparing the substrate before film deposition to define discrete nucleation sites. The substrate is prepared for film deposition by forming a pattern of irregularities in the surface thereof. The irregularities, typically craters, are arranged in a predetermined pattern which corresponds to that desired for the location of film crystals. The craters preferrably are of uniform, predetermined dimensions (in the sub-micron and micron size range) and are uniformly spaced apart by a predetermined distance. The craters may be formed by a number of techniques, including focused ion beam milling, laser vaporization, and chemical or plasma etching using a patterned photoresist. Once the substrate has been prepared the film may be deposited by a number of known techniques. Films prepared by this method are characterized by a regular surface pattern of crystals which may be arranged in virtually any desired pattern. Diamond film materials made by this technique may be used in many electrical, optical, thermal and other applications.

Abstract translation: 在异物基底上形成诸如金刚石的多晶膜的方法包括在膜沉积之前制备基底以限定离散的成核位点。 通过在其表面上形成不规则图案来制备用于膜沉积的衬底。 不规则形状（通常为凹坑）以与薄膜晶体的位置所期望的对应的预定图案排列。 凹坑优选地具有均匀的预定尺寸（亚微米和微米尺寸范围），并且均匀间隔开预定距离。 凹坑可以通过许多技术形成，包括聚焦离子束研磨，激光蒸发和使用图案化的光致抗蚀剂的化学或等离子体蚀刻。 一旦制备了基底，可以通过多种已知技术沉积该膜。 通过该方法制备的膜的特征在于可以以几乎任何所需图案布置的规则的晶体表面图案。 通过该技术制造的金刚石膜材料可用于许多电气，光学，热学和其他应用中。

公开(公告)号：US4229232A

公开(公告)日：1980-10-21

申请号：US968379

申请日：1978-12-11

Applicant: Allen R. Kirkpatrick

Inventor： Allen R. Kirkpatrick

IPC: B23K26/00 ,  C23C10/28 ,  H01L21/263 ,  B23K27/00

CPC classification number: C23C10/28 ,  B23K26/0066 ,  B23K26/0072 ,  B23K26/0081 ,  B23K26/0084 ,  Y10S148/046

Abstract: A pulsed beam generator produces a short duration pulsed beam for thermal processing of selected regions of metallic and dielectric materials. The pulse beam is directed towards the material and irradiates selected surface regions thereof. Energy deposited by the pulsed beam momentarily elevates the temperature of the selected regions for a variety of thermal processing effects. The characteristics of the pulsed beam are such that only those regions on or near the surface are subjected to this thermal processing.

Abstract translation: 脉冲束发生器产生短持续时间的脉冲束，用于金属和电介质材料的选定区域的热处理。 脉冲光束被引向材料并照射其选定的表面区域。 通过脉冲束沉积的能量瞬间提高所选区域的温度，以获得各种热处理效果。 脉冲光束的特性使得只有表面上或附近的那些区域才进行这种热处理。

公开(公告)号：US4151008A

公开(公告)日：1979-04-24

申请号：US780416

申请日：1977-03-23

Applicant: Allen R. Kirkpatrick

Inventor： Allen R. Kirkpatrick

IPC: H01J37/305 ,  H01L21/265 ,  H01L21/268 ,  H01L21/26

CPC classification number: H01L21/268 ,  H01J37/305 ,  H01L21/26513 ,  H01L21/2686

Abstract: A pulsed laser or flash lamp produces a short duration pulse of light for thermal processing of selected regions of a semiconductor device. The light pulse is directed towards the semiconductor device and irradiates selected surface regions of the device to be processed. Energy deposited by the light pulse momentarily elevates the temperature of the selected regions above threshold processing temperatures for rapid, effective annealing, sintering or other thermal processing. The characteristics of the light pulse are such that only those surface vicinity regions to be processed are elevated to a high temperature and the remaining mass of the semiconductor device is not subjected to unnecessary or undesirable high temperature exposure.

Abstract translation: 脉冲激光或闪光灯产生用于半导体器件的选定区域的热处理的短持续时间脉冲。 光脉冲被引向半导体器件并照射待处理器件的选定表面区域。 通过光脉冲沉积的能量将选定区域的温度暂时升高到高于阈值处理温度以进行快速，有效的退火，烧结或其他热处理。 光脉冲的特性使得只有待处理的那些表面附近区域升高到高温，并且半导体器件的剩余质量不会受到不必要或不期望的高温暴露。