公开(公告)号：US20200303512A1

公开(公告)日：2020-09-24

申请号：US16595187

申请日：2019-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YEONKWANG LEE ,  Sungmin Kang ,  Kyungmin Kim ,  Minhee Uh ,  Jun-Gu Kang ,  Youngmok Kim

IPC: H01L29/49 ,  H01L27/092 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/78 ,  H01L29/66 ,  H01L21/265

Abstract: A semiconductor device includes a substrate, in which a lower semiconductor layer, an insulating gapfill layer, and an upper semiconductor layer are sequentially stacked. A gate structure is disposed on the upper semiconductor layer. A source/drain electrode is disposed on a sidewall of the gate structure. A semiconductor pattern is disposed between the source/drain electrode and the upper semiconductor layer. The gate structure includes a gate electrode and a spacer structure. The spacer structure includes a first spacer pattern, a second spacer pattern, and a third spacer pattern, sequentially disposed on a sidewall of the gate electrode. The semiconductor pattern is extended to a region below a bottom surface of the third spacer pattern and is connected to the second spacer pattern.

公开(公告)号：US12279849B2

公开(公告)日：2025-04-22

申请号：US18650981

申请日：2024-04-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chungsoon Park ,  Kyungmin Kim ,  Sujin Park ,  Hyunggon Kim

IPC: A61B5/00 ,  H02J7/00 ,  H02J7/04 ,  H02J50/12 ,  H02J50/20 ,  H02J50/80 ,  H04B10/50 ,  H04B10/69

Abstract: An electronic device is provided comprising: a biometric sensor, including at least one light emitting diode (LED) and at least one light receiving unit, for acquiring biometric information by means of the at least one light emitting device and the at least one light receiving unit; a power receiving circuit configured to receive a wireless power signal from an external electronic device; and a processor operatively coupled to the biometric sensor and the power receiving circuit. The processor may be configured to receive a designated wireless power signal from the external electronic device by using the power receiving circuit and to perform optical communication with the external electronic device by using the biosensor when the designated wireless power signal is received. Other various embodiments identified from the specification are also possible.

公开(公告)号：US12047696B2

公开(公告)日：2024-07-23

申请号：US18350461

申请日：2023-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seokyong Park ,  Kyungmin Kim

IPC: H04N25/59 ,  H01L27/146 ,  H04N25/766

CPC classification number: H04N25/59 ,  H01L27/14612 ,  H04N25/766 ,  H01L27/14643

Abstract: A unit pixel circuit includes a first photodiode, a second photodiode different from the first photodiode, a first floating diffusion node in which charges generated in the first photodiode are accumulated, a second floating diffusion node in which charges generated in the second photodiode are accumulated, a capacitor connected to the first floating diffusion node and a first voltage node, and accumulating overflowed charges of the first photodiode, a first switch transistor connecting the first floating diffusion node to a third floating diffusion node, a reset transistor connecting the third floating diffusion node to a second voltage node, a gain control transistor connecting the second floating diffusion node to the third floating diffusion node, and a second switch transistor connected to the first voltage node and the second voltage node.

公开(公告)号：US20230140230A1

公开(公告)日：2023-05-04

申请号：US18146732

申请日：2022-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyongho KIM ,  Changsik Yoo ,  Kyungmin Kim

IPC: H04L1/00

Abstract: Disclosed is a transmitter which includes an encoder and a transmission interface circuit. The encoder receives data bits and generates conversion bits, a number of is the conversion bits being more than a number of the data bits, based on the number of the data bits. The encoder detects a risk pattern of the conversion bits to generate detection data and converts the risk pattern into a replacement pattern based on the detection data to generate code bits, a number of is the code bits being equal to the number of the conversion bits.

公开(公告)号：USD974374S1

公开(公告)日：2023-01-03

申请号：US29766301

申请日：2021-01-14

Applicant: Samsung Electronics Co., Ltd.

Designer： Sojeong Cha ,  Kyungmin Kim ,  Heungkyo Seo ,  Junho Lee

公开(公告)号：US20220078362A1

公开(公告)日：2022-03-10

申请号：US17459045

申请日：2021-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yunhwan Jung ,  Hyeokjong Lee ,  Sunyool Kang ,  Kyungmin Kim ,  Yunhong Kim ,  Ingyeong Shin

IPC: H04N5/355 ,  H04N5/378 ,  H04N5/3745

Abstract: An image sensor includes a pixel configured to operate in a high conversion gain (HCG) mode and a low conversion gain (LCG) mode during a readout period, and a correlated double sampling (CDS) circuit configured to generate a comparison signal based on a ramp signal and a pixel voltage received from the pixel, wherein the CDS circuit includes a comparator configured to: receive the pixel voltage through a first input node, receive the ramp signal through a second input node based on an LCG reset signal or an LCG image signal being received as the pixel voltage, and receive the ramp signal through a third input node based on an HCG reset signal or an HCG image signal being received as the pixel voltage; and compare the ramp signal to the pixel voltage, and output the comparison signal corresponding to a comparison result.

公开(公告)号：US10937882B2

公开(公告)日：2021-03-02

申请号：US16595187

申请日：2019-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeonkwang Lee ,  Sungmin Kang ,  Kyungmin Kim ,  Minhee Uh ,  Jun-Gu Kang ,  Youngmok Kim

IPC: H01L29/06 ,  H01L29/49 ,  H01L27/092 ,  H01L27/12 ,  H01L21/265 ,  H01L29/10 ,  H01L29/78 ,  H01L29/66 ,  H01L29/08

Abstract: A semiconductor device includes a substrate, in which a lower semiconductor layer, an insulating gapfill layer, and an upper semiconductor layer are sequentially stacked. A gate structure is disposed on the upper semiconductor layer. A source/drain electrode is disposed on a sidewall of the gate structure. A semiconductor pattern is disposed between the source/drain electrode and the upper semiconductor layer. The gate structure includes a gate electrode and a spacer structure. The spacer structure includes a first spacer pattern, a second spacer pattern, and a third spacer pattern, sequentially disposed on a sidewall of the gate electrode. The semiconductor pattern is extended to a region below a bottom surface of the third spacer pattern and is connected to the second spacer pattern.

公开(公告)号：US09804898B2

公开(公告)日：2017-10-31

申请号：US14037941

申请日：2013-09-26

Applicant: Samsung Electronics Co. Ltd.

Inventor： Kyunghoon Han ,  Kyungmin Kim ,  Chaekyung Lee ,  Youngsun Shin

IPC: G06F3/00 ,  G06F9/44 ,  G06F9/46 ,  G06F13/00 ,  G06F9/54 ,  G06F9/48 ,  G06F3/048 ,  G06F9/445

CPC classification number: G06F9/54 ,  G06F3/048 ,  G06F3/0482 ,  G06F3/04886 ,  G06F9/44505 ,  G06F9/44526 ,  G06F9/451 ,  G06F9/461 ,  G06F9/48 ,  G06F2203/04803

Abstract: A method for processing an application in a portable terminal is provided. The method includes displaying a main application and at least one corresponding sub-application item, calling a corresponding sub-application when selecting the sub-application item, displaying the sub-application so as to overlay on a partial area of a main application screen, and processing information selected from the main application in the sub-application.