公开(公告)号：US20240389397A1

公开(公告)日：2024-11-21

申请号：US18609327

申请日：2024-03-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JISOO HAM ,  KYUNGLYONG KANG ,  JUNGU KANG ,  YOUNGMOK KIM ,  SEONGJIN PARK ,  YEONKWANG LEE ,  YONGSANG JEONG

IPC: H10K59/122 ,  H10K59/35 ,  H10K59/80

Abstract: A light emitting display apparatus includes an insulating layer arranged on a substrate. The insulating layer includes a trench. A first electrode is arranged on the insulating layer. A light emitting layer is arranged on the insulating layer and the first electrode. A separator is arranged between the insulating layer and the light emitting layer. The separator covers at least one sidewall of the trench. A second electrode is arranged on the light emitting layer. The separator includes a recess portion having at least a portion concavely defined in a horizontal direction on the substrate.

公开(公告)号：US20200303512A1

公开(公告)日：2020-09-24

申请号：US16595187

申请日：2019-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YEONKWANG LEE ,  Sungmin Kang ,  Kyungmin Kim ,  Minhee Uh ,  Jun-Gu Kang ,  Youngmok Kim

IPC: H01L29/49 ,  H01L27/092 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/78 ,  H01L29/66 ,  H01L21/265

Abstract: A semiconductor device includes a substrate, in which a lower semiconductor layer, an insulating gapfill layer, and an upper semiconductor layer are sequentially stacked. A gate structure is disposed on the upper semiconductor layer. A source/drain electrode is disposed on a sidewall of the gate structure. A semiconductor pattern is disposed between the source/drain electrode and the upper semiconductor layer. The gate structure includes a gate electrode and a spacer structure. The spacer structure includes a first spacer pattern, a second spacer pattern, and a third spacer pattern, sequentially disposed on a sidewall of the gate electrode. The semiconductor pattern is extended to a region below a bottom surface of the third spacer pattern and is connected to the second spacer pattern.