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公开(公告)号:US20220173106A1
公开(公告)日:2022-06-02
申请号:US17369320
申请日:2021-07-07
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyungeun CHOI , Kiseok LEE , Seungjae JUNG , Joongchan SHIN , Taehyun AN , Moonyoung JEONG , Sangyeon HAN
IPC: H01L27/108 , H01L29/08
Abstract: A semiconductor memory device includes: a bit line extending on a substrate in a vertical direction; a transistor body part including a first source-drain region, a monocrystalline channel layer, and a second source-drain region that are sequentially arranged in a first horizontal direction and connected to the bit line; gate electrode layers extending in a second horizontal direction that is orthogonal to the first horizontal direction, with a gate dielectric layer between the gate electrode layers and the monocrystalline channel layer, and covering upper and lower surfaces of the monocrystalline channel layer; and a cell capacitor including a lower electrode layer, a capacitor dielectric layer, and an upper electrode layer at a side of the transistor body that is opposite to the bit line in the first horizontal direction and is connected to the second source-drain region.
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公开(公告)号:US20190239270A1
公开(公告)日:2019-08-01
申请号:US16259443
申请日:2019-01-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Giwon LEE , Moonyoung JEONG , Youngsung KHO , Joonseo LEE , Kyuho HAN
CPC classification number: H04W76/18 , H04L12/66 , H04W24/04 , H04W36/0011 , H04W40/24 , H04W76/15 , H04W88/18
Abstract: Provided are a method and apparatus for managing a session in a wireless communication system. The method includes identifying a session management module with a failure from among a plurality of session management modules that each manage at least one session; determining a substitute module that replaces the session management module with the failure; obtaining, from a control plane entity, information about at least one session managed by the session management module with the failure; and controlling the substitute module to manage the at least one session, based on the obtained information about the at least one session.
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公开(公告)号:US20180158918A1
公开(公告)日:2018-06-07
申请号:US15868620
申请日:2018-01-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dongjin LEE , Junsoo KIM , Moonyoung JEONG , Satoru YAMADA , Dongsoo WOO , Jiyoung KIM
IPC: H01L29/40 , H01L27/108 , H01L29/423
CPC classification number: H01L29/402 , B82Y10/00 , H01L21/84 , H01L27/088 , H01L27/10876 , H01L27/1203 , H01L29/42392 , H01L29/66439 , H01L29/775 , H01L29/78639 , H01L29/78696
Abstract: A semiconductor device may include a device isolation region configured to define an active region in a substrate, an active gate structure disposed in the active region, and a field gate structure disposed in the device isolation region. The field gate structure may include a gate conductive layer. The active gate structure may include an upper active gate structure including a gate conductive layer and a lower active gate structure formed under the upper active gate structure and vertically spaced apart from the upper active gate structure. The lower active gate structure may include a gate conductive layer. A top surface of the gate conductive layer of the field gate structure is located at a lower level than a bottom surface of the gate conductive layer of the upper active gate structure.
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