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    OPTO-ELECTRONIC DEVICE AND IMAGE SENSOR INCLUDING THE SAME
    22.
    发明申请
    OPTO-ELECTRONIC DEVICE AND IMAGE SENSOR INCLUDING THE SAME 有权

    公开(公告)号：US20210376190A1

    公开(公告)日：2021-12-02

    申请号：US17036962

    申请日：2020-09-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hojung Kim ,  Chanwook Baik ,  Kyungsang Cho

    IPC: H01L33/06 ,  H01L33/62 ,  H01L33/42 ,  H01L33/38

    Abstract: Provided is an opto-electronic device including a semiconductor substrate doped with a first conductivity type impurity, a source region and a drain region provided on the semiconductor substrate spaced apart from each other and doped with a second conductivity type impurity which is electrically opposite to the first conductivity type impurity, a first electrode and a second electrode electrically connected to the source region and the drain region, respectively, a quantum dot layer provided between the source region and the drain region on the semiconductor substrate and including quantum dots, a first insulation layer configured to insulate the semiconductor substrate and the quantum dot layer from each other, and a transparent electrode layer provided on the quantum dot layer.

    Optoelectronic device including quantum dot
    24.
    发明授权
    Optoelectronic device including quantum dot 有权

    公开(公告)号：US09905790B2

    公开(公告)日：2018-02-27

    申请号：US15091650

    申请日：2016-04-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Weonkyu Koh ,  Taeho Shin ,  Kyungsang Cho

    IPC: H01L51/50 ,  H01L51/42

    CPC classification number: H01L51/502 ,  H01L51/426 ,  H01L51/4273 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5096 ,  H01L2251/305 ,  Y02E10/549

    Abstract: Provided are optoelectronic devices including quantum dots. An optoelectronic device may include an active layer including a quantum dot and at least one molecular interlayer adjacent to the active layer. The active layer may be provided between two electrodes, and a charge transfer layer may be provided adjacent to the active layer. The molecular interlayer may be provided between the active layer and the charge transfer layer. The molecular interlayer may have a smaller amount of surface charge than the charge transfer layer. The molecular interlayer may include a nonionic material or a hydrophobic material. The charge transfer layer may include an electron transport layer, and the electron transport layer may include an inorganic semiconductor.

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