公开(公告)号：US20240103070A1

公开(公告)日：2024-03-28

申请号：US18230373

申请日：2023-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeonjin Lee ,  Jongmin Lee

IPC: G01R31/28 ,  H01L21/66

CPC classification number: G01R31/2884 ,  H01L22/32

Abstract: Provided is a semiconductor device including a substrate including an element region and a scribe lane region defining the element region, and one or more test element groups arranged on the substrate and including one or more test elements for characteristic evaluation and one or more test pads for applying a test signal for testing the one or more test elements, wherein all of the one or more test pads are spaced apart from the element region in a horizontal direction.

公开(公告)号：US20240069093A1

公开(公告)日：2024-02-29

申请号：US18174865

申请日：2023-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sehyun Hwang ,  Jongmin Lee ,  Joongwon Shin ,  Jimin Choi

IPC: G01R31/28 ,  H01L23/00 ,  H01L23/50 ,  H01L23/528 ,  H10B80/00

CPC classification number: G01R31/2884 ,  H01L23/50 ,  H01L23/528 ,  H01L24/05 ,  H10B80/00 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/0557 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2924/1431 ,  H01L2924/14361

Abstract: Provided are a semiconductor chip with a reduced thickness and improved reliability, and a semiconductor package including the semiconductor chip. The semiconductor chip includes a semiconductor substrate, an integrated device layer on the semiconductor substrate, a multi-wiring layer on the integrated device layer, and a pad metal layer of a plurality of pad metal layers on the multi-wiring layer, and having test pads defined therein. The pad metal layers extend in a first direction parallel to a top surface of the semiconductor substrate or in a second direction perpendicular to the first direction. A test pad is a central portion of the pad metal layer and, and an outer portion of the pad metal layer excluding the test pad overlaps the wires in a third direction perpendicular to the top surface of the semiconductor substrate.

公开(公告)号：US11788005B2

公开(公告)日：2023-10-17

申请号：US17824225

申请日：2022-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Gon Kim ,  Shin Ae Jun ,  Taek hoon Kim ,  Hyeyeon Yang ,  Nayoun Won ,  Jongmin Lee ,  Mi Hye Lim

IPC: C09K11/70 ,  C08F220/38 ,  C09K11/02 ,  C09K11/88 ,  H01L33/00 ,  H01L33/50 ,  B82Y20/00

CPC classification number: C09K11/70 ,  C08F220/382 ,  C09K11/025 ,  C09K11/88 ,  C09K11/883 ,  H01L33/005 ,  H01L33/502 ,  B82Y20/00 ,  H01L2933/0025 ,  H01L2933/0041

Abstract: Quantum dots and a composite and a display device including the quantum dots. The quantum dots comprise a semiconductor nanocrystal core comprising indium and phosphorous, and optionally zinc, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc, selenium, and sulfur, wherein the quantum dots are configured to exhibit a maximum photoluminescence peak in a green light wavelength region, and in an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dots, a ratio A450/Afirst, of an absorption value at 450 nm to an absorption value at a first excitation peak is greater than or equal to about 0.7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4:

(Absfirst−Absvalley)/Absfirst=VD



wherein, Absfirst is an absorption value at the first absorption peak wavelength and Absvalley is an absorption value at a lowest point of the valley adjacent to the first absorption peak, and
wherein the maximum photoluminescence peak of the quantum dots has a full width at half maximum of less than or equal to 40 nanometers.

公开(公告)号：US11345851B2

公开(公告)日：2022-05-31

申请号：US17106317

申请日：2020-11-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taekhoon Kim ,  Seonmyeong Choi ,  Jongmin Lee ,  Tae Gon Kim ,  Young Seok Park ,  Shin Ae Jun

IPC: C09K11/88 ,  G03F7/004 ,  G03F7/032 ,  G03F7/029 ,  H01L27/32 ,  G02F1/13357 ,  C09K11/08 ,  G03F7/40 ,  B82Y20/00 ,  B82Y40/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38

Abstract: A photosensitive composition including a quantum dot; a binder polymer including a carboxylic acid group; a photopolymerizable monomer including a carbon-carbon double bond; and a photoinitiator, a patterned film produced therefrom and a display device including the same. The quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well including a second semiconductor nanocrystal, the quantum well surrounding the seed and a shell disposed on the quantum well, the shell including a third semiconductor nanocrystal and not including cadmium, the second semiconductor nanocrystal has a different composition from each of the first semiconductor nanocrystal and the third semiconductor nanocrystal, and an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal.

公开(公告)号：US10851297B2

公开(公告)日：2020-12-01

申请号：US16507461

申请日：2019-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taekhoon Kim ,  Seonmyeong Choi ,  Jongmin Lee ,  Tae Gon Kim ,  Young Seok Park ,  Shin Ae Jun

IPC: C09K11/88 ,  G03F7/004 ,  G03F7/032 ,  G03F7/029 ,  H01L27/32 ,  G02F1/13357 ,  C09K11/08 ,  G03F7/40 ,  B82Y20/00 ,  B82Y40/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38

Abstract: A photosensitive composition including a quantum dot; a binder polymer including a carboxylic acid group; a photopolymerizable monomer including a carbon-carbon double bond; and a photoinitiator, a patterned film produced therefrom and a display device including the same. The quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well including a second semiconductor nanocrystal, the quantum well surrounding the seed and a shell disposed on the quantum well, the shell including a third semiconductor nanocrystal and not including cadmium, the second semiconductor nanocrystal has a different composition from each of the first semiconductor nanocrystal and the third semiconductor nanocrystal, and an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal.

公开(公告)号：US10070522B2

公开(公告)日：2018-09-04

申请号：US15342308

申请日：2016-11-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doh Won Jung ,  Se Yun Kim ,  Jong Wook Roh ,  Jongmin Lee ,  Sungwoo Hwang ,  Jinyoung Hwang ,  Chan Kwak

IPC: H05K1/09 ,  C01G55/00 ,  C09D1/00 ,  C09D5/24 ,  C09D7/40 ,  B82Y30/00 ,  B82Y40/00 ,  H05K1/02 ,  C08K3/22 ,  H05K3/28

Abstract: An electrical conductor includes a substrate; and a first conductive layer disposed on the substrate and including a plurality of metal oxide nanosheets, wherein adjacent metal oxide nanosheets of the plurality of metal oxide nanosheets contact to provide an electrically conductive path between the contacting metal oxide nanosheets, wherein the plurality of metal oxide nanosheets include an oxide of Re, V, Os, Ru, Ta, Ir, Nb, W, Ga, Mo, In, Cr, Rh, Mn, Co, Fe, or a combination thereof, and wherein the metal oxide nanosheets of the plurality of metal oxide nanosheets have an average lateral dimension of greater than or equal to about 1.1 micrometers.

公开(公告)号：US09899209B2

公开(公告)日：2018-02-20

申请号：US14870265

申请日：2015-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doh Won Jung ,  Hee Jung Park ,  Yoon Chul Son ,  Yun Sung Woo ,  Jongmin Lee ,  Yong Hee Cho ,  Kyoung-Seok Moon ,  Jae-Young Choi ,  Kimoon Lee

IPC: H01B1/02 ,  B32B15/04 ,  H01L21/02 ,  H01L27/01 ,  B32B5/16

CPC classification number: H01L21/02186 ,  B32B5/16 ,  B32B15/04 ,  B32B2307/202 ,  B32B2307/704 ,  H01B1/02 ,  H01L21/02172 ,  H01L21/02197 ,  H01L27/016

Abstract: An electrically conductive thin film including a plurality of nanosheets including a doped titanium oxide represented by Chemical Formula 1 and having a layered crystal structure: (AαTi1−α)O2+δ  Chemical Formula 1 wherein, in Chemical Formula 1, δ is greater than 0, A is at least one dopant metal selected from Nb, Ta, V, W, Cr, and Mo, and α is greater than 0 and less than 1. Also, an electronic device including the electrically conductive thin film.

公开(公告)号：US20150259311A1

公开(公告)日：2015-09-17

申请号：US14656427

申请日：2015-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyunghae Lee ,  Mooho Lee ,  Jun Chwae ,  Jinhwan Park ,  Jongmin Lee ,  Kwangmyung Cho ,  Jaechan Park

IPC: C07D307/33

CPC classification number: C07D307/33

Abstract: A method of producing lactone by converting an aqueous solution including hydroxycarboxylic acid or dicarboxylic acid to lactone under an acid condition and in the presence of a water immiscible solvent.

Abstract translation: 通过在酸性条件下和在水不混溶溶剂的存在下将包含羟基羧酸或二羧酸的水溶液转化为内酯来制备内酯的方法。

公开(公告)号：US20250062255A1

公开(公告)日：2025-02-20

申请号：US18670055

申请日：2024-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyuseong PARK ,  Jongmin Lee ,  Nara Lee ,  Juik Lee

IPC: H01L23/00 ,  H01L25/065

Abstract: A semiconductor chip includes a semiconductor substrate including an active surface and an inactive surface opposite to the active surface, a wiring layer on the active surface, a front connection pad on the wiring layer, a lower protective insulating layer at least partially covering the wiring layer and including a lower opening that exposes at least a portion of the front connection pad, an upper protective insulating layer including an upper opening communicatively coupled to the lower opening on the lower protective insulating layer, a connection terminal coupled to the front connection pad through the lower opening and the upper opening, and an upper cover insulating layer between the connection terminal and the upper protective insulating layer. The upper protective insulating layer includes an organic material. The upper cover insulating layer includes an inorganic material.

公开(公告)号：US12183660B2

公开(公告)日：2024-12-31

申请号：US17736212

申请日：2022-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonil Lee ,  Jongmin Lee ,  Jimin Choi ,  Yeonjin Lee

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/532 ,  H01L23/535

Abstract: A semiconductor device includes a substrate including a first surface, and a second surface opposing the first surface. A via insulating layer extending through the substrate is disposed. A through-silicon via extending through the via insulating layer is disposed. The center of the through-silicon via is misaligned from the center of the via insulating layer. A blocking layer is disposed on the first surface. A first insulating layer is disposed on the blocking layer. A contact plug contacting the through-silicon via and extending through the first insulating layer and the blocking layer is disposed.