公开(公告)号：US10475817B2

公开(公告)日：2019-11-12

申请号：US15971435

申请日：2018-05-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byoung Kwon Choo ,  Joon Hwa Bae ,  Hyun Jin Cho ,  Jun Hyuk Cheon ,  Zi Yeon Yoon ,  Woo Jin Cho ,  Sung Hwan Choi ,  Jeong Hye Choi

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  G02F1/1368 ,  H01L27/12 ,  H01L21/321 ,  G02F1/1362 ,  H01L27/32 ,  H01L29/66 ,  H01L29/78

Abstract: A thin-film transistor (TFT) array substrate is provided. The TFT array substrate includes a base substrate, a semiconductor layer disposed on the base substrate, an insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the insulating layer. A top surface of a portion of the insulating layer overlapping the semiconductor layer in a plan view of the base substrate and a top surface of the gate electrode are placed on the same level.

公开(公告)号：US10438976B2

公开(公告)日：2019-10-08

申请号：US16243702

申请日：2019-01-09

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyun Jin Cho ,  Joon-Hwa Bae ,  Byoung Kwon Choo ,  Byung Hoon Kang ,  Kwang Suk Kim ,  Woo Jin Cho ,  Jun Hyuk Cheon

IPC: H01L27/12 ,  H01L21/3105 ,  G09G3/3233 ,  C09G1/02 ,  B24B31/00 ,  H01L27/32 ,  H01L21/02 ,  H01L29/786 ,  H01L21/66

Abstract: A method for manufacturing a display device includes forming a first gate metal wire on a substrate, forming a first insulation layer that covers the first gate metal wire, forming a second gate metal wire on the first insulation layer, forming a second main insulation layer that covers the second gate metal wire, forming a second auxiliary insulation layer on the second main insulation layer, forming an exposed portion of an upper surface of the second main insulation layer by polishing the second auxiliary insulation layer, and forming a first data metal wire on the second main insulation layer and the second auxiliary insulation layer.

公开(公告)号：US10199405B2

公开(公告)日：2019-02-05

申请号：US15671638

申请日：2017-08-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Joon-Hwa Bae ,  Byoung Kwon Choo ,  Byung Hoon Kang ,  Woo Jin Cho ,  Hyun Jin Cho ,  Jun Hyuk Cheon ,  Jee-Hyun Lee

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/786 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L29/66 ,  H01L21/768

Abstract: A method of manufacturing a transistor display panel and a transistor display panel, the method including forming a polycrystalline silicon layer on a substrate; forming an active layer by patterning the polycrystalline silicon layer; forming a first insulating layer covering the substrate and the active layer; exposing the active layer by polishing the first insulating layer using a polishing apparatus; and forming a second insulating layer that contacts the first insulating layer and the active layer, wherein exposing the active layer by polishing the first insulating layer includes coating a first slurry on a surface of the first insulating layer, the first slurry reducing a polishing rate of the active layer.

公开(公告)号：US09768019B2

公开(公告)日：2017-09-19

申请号：US15158755

申请日：2016-05-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Joon-Hwa Bae ,  Byoung Kwon Choo ,  Jeong Kyun Na ,  Byoung Ho Cheong ,  Joo Woan Cho

IPC: H01L21/20 ,  H01L21/268 ,  H01L33/58 ,  H01L21/339 ,  H01L21/84 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/308 ,  H01L27/12

CPC classification number: H01L21/02675 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02672 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/32139 ,  H01L27/1281

Abstract: A laser crystallization method includes forming a plurality of first protrusions and depressions on a surface of an amorphous silicon layer, wherein a first protrusion and an adjacent first depression of the plurality of first protrusions and depressions, together, have a first pitch, and irradiating the amorphous silicon layer with a laser beam to form a polycrystalline silicon layer.

公开(公告)号：US09387552B2

公开(公告)日：2016-07-12

申请号：US14697444

申请日：2015-04-27

Applicant: Samsung Display Co., Ltd.

Inventor： Joo Woan Cho ,  Sanghoon Ahn ,  Byoungho Cheong ,  Byoung Kwon Choo

IPC: H01L21/02 ,  G02B27/14 ,  G02B26/08 ,  B23K26/06 ,  B23K26/067 ,  C21D9/50 ,  H01L21/268

CPC classification number: B23K26/062 ,  B23K26/0604 ,  B23K26/0643 ,  B23K26/0665 ,  B23K26/0676 ,  B23K26/082 ,  B23K26/352 ,  B23K2101/40 ,  C21D9/50 ,  G02B26/08 ,  G02B27/0905 ,  G02B27/0933 ,  G02B27/145 ,  G02B27/146 ,  H01L21/268

Abstract: A laser annealing apparatus includes a beam splitter that splits a laser beam emitted from a laser source into a reflection light beam and a transmission light beam, a beam vibrator that makes an irradiation point of the reflection light beam or the transmission light beam vibrate in a predetermined direction, a beam inverter that inverts the reflection light beam or the transmission light beam, and a light collector that collects the reflection light and the transmission light.

Abstract translation: 激光退火装置包括将从激光源发射的激光束分解为反射光束和透射光束的分束器，使反射光束或透射光束的照射点振动的光束振动器 预定方向，反射反射光束或透射光束的光束反射器，以及收集反射光和透射光的集光器。