公开(公告)号：US10755639B2

公开(公告)日：2020-08-25

申请号：US16381491

申请日：2019-04-11

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myounggeun Cha ,  Sanggun Choi ,  Jiyeong Shin ,  Yong Su Lee

IPC: G09G3/3233

Abstract: A pixel unit of a display device including: an OLED; a first transistor including a first electrode connected to a first node, a second electrode connected to a second node, and a third electrode connected to a third node; a capacitor including a first electrode receiving a power voltage and a second electrode connected to the first node; a second transistor including a first electrode receiving a scan signal, a second electrode receiving a data voltage and a third electrode connected to the second node; a third transistor including a first electrode receiving the scan signal, a second electrode connected to the first node and a third electrode connected to the third node, wherein at least one of the first and third transistors includes a fourth electrode, the fourth electrode receives a compensation voltage when an operation temperature is above a preset temperature and is floated when the operation temperature is equal to or more than the preset temperature.

公开(公告)号：US10658398B2

公开(公告)日：2020-05-19

申请号：US16036985

申请日：2018-07-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jong Chan Lee ,  Woong Hee Jeong ,  Tae Hoon Yang ,  Yong Su Lee

IPC: H01L27/12

Abstract: A display device includes a substrate, a buffer layer on the substrate, a first semiconductor layer of a first transistor on the buffer layer, a first insulating layer disposed on the first semiconductor layer, a first gate electrode of the first transistor on the first insulating layer, a second insulating layer on the first gate electrode, and a second semiconductor layer of a second transistor disposed on the second insulating layer. A difference between a first distance between a lower side of the buffer layer and an upper side of the second insulating layer and a second distance between an upper side of the first semiconductor layer and an upper side of the second insulating layer is 420 to 520 angstroms.

公开(公告)号：US09620609B2

公开(公告)日：2017-04-11

申请号：US14830091

申请日：2015-08-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyun Jae Na ,  Yoon Ho Khang ,  Sang Ho Park ,  Dong Hwan Shim ,  Se Hwan Yu ,  Yong Su Lee ,  Myoung Geun Cha

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L29/51 ,  H01L33/34

CPC classification number: H01L29/4908 ,  H01L29/518 ,  H01L29/78603 ,  H01L29/78633

Abstract: A thin film transistor display panel according to an exemplary embodiment of the present invention includes a substrate, a first insulating layer formed on the substrate, a semiconductor layer formed on the first insulating layer, a second insulating layer formed on the semiconductor layer, and a gate electrode formed on the second insulating layer, in which the first insulating layer includes a light blocking material, and a thickness of the first insulating layer is greater than or equal to a thickness of the second insulating layer.

公开(公告)号：US12075655B2

公开(公告)日：2024-08-27

申请号：US17151883

申请日：2021-01-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myoung Geun Cha ,  Sang Gun Choi ,  Sang Sub Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Ki Seok Choi

IPC: H01L27/12 ,  H10K59/121 ,  H10K59/123 ,  H10K59/124

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  H10K59/123 ,  H10K59/124

Abstract: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.

公开(公告)号：US11616108B2

公开(公告)日：2023-03-28

申请号：US16661329

申请日：2019-10-23

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Joon Woo Bae ,  Mee Jae Kang ,  Thanh Tien Nguyen ,  Kyoung Won Lee ,  Yong Su Lee ,  Jae Seob Lee ,  Gyoo Chul Jo ,  Myoung Geun Cha

IPC: H01L27/32

Abstract: An organic light emitting diode display includes a substrate, an overlap layer on the substrate, a semiconductor layer on the overlap layer, a first gate conductor on the semiconductor layer, a second gate conductor on the first gate conductor, a data conductor on the second gate conductor, a driving transistor on the overlap layer, and an organic light emitting diode connected with the driving transistor. The driving transistor includes, in the semiconductor layer, a first electrode, a second electrode, with a channel therebetween. A gate electrode of the first gate conductor overlaps the channel. The overlap layer overlaps the channel of the driving transistor and at least a portion of the first electrode. A storage line of the second gate conductor receives a driving voltage through a driving voltage line in the data conductor. The overlap layer receives a constant voltage.

公开(公告)号：US11410602B2

公开(公告)日：2022-08-09

申请号：US17092832

申请日：2020-11-09

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo Kim ,  Hye Na Kwak ,  Doo Na Kim ,  Han Bit Kim ,  Yong Su Lee

IPC: G09G3/3233 ,  G09G3/20 ,  G09G3/3275 ,  G09G3/3266

Abstract: A display device includes a driving circuit that drives a pixel, and a display region including the pixel. The pixel includes a light emitting element electrically connected between a first power source and a second power source, a first transistor electrically connected between the first power source and the light emitting element to control a driving current, the first transistor including a first gate electrode electrically connected to a first node, and a second gate electrode electrically connected to a bias control line, and a switching transistor electrically connected between a data line and the first node, the switching transistor including a gate electrode electrically connected to a scan line. The driving circuit varies a control signal provided to the bias control line in a second period based on a first data signal provided to the data line during a first period.

公开(公告)号：US11380746B2

公开(公告)日：2022-07-05

申请号：US17208571

申请日：2021-03-22

Applicant: Samsung Display Co., Ltd.

Inventor： Seong Min Wang ,  Young-In Hwang ,  Yong Ho Yang ,  Yong Su Lee ,  Jae Seob Lee ,  Gyoo Chul Jo

IPC: H01L27/32 ,  H01L51/52 ,  G09G3/3233 ,  G09G3/3258 ,  H01L51/00

Abstract: A display may include flexible substrate, a blocking layer on the flexible substrate, a pixel on the flexible substrate and the blocking layer, and a scan line, a data line, a driving voltage line, and an initialization voltage line connected to the pixel. The pixel may include an organic light emitting diode, a switching transistor connected to the scan line, and a driving transistor to apply a current to the organic light emitting diode. The blocking layer is in an area that overlaps the switching transistor on a plane, and between the switching transistor and the flexible substrate, and receives a voltage through a contact hole that exposes the blocking layer.

公开(公告)号：US10930725B2

公开(公告)日：2021-02-23

申请号：US16575643

申请日：2019-09-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myoung Geun Cha ,  Sang Gun Choi ,  Sang Sub Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Ki Seok Choi

IPC: H01L27/32

Abstract: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.

公开(公告)号：US10826026B2

公开(公告)日：2020-11-03

申请号：US16203784

申请日：2018-11-29

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun Cha ,  Sang Gun Choi ,  Joon Woo Bae ,  Ji Yeong Shin ,  Yong Su Lee

IPC: H01L51/56 ,  H01L27/32 ,  H01L21/308 ,  H01L51/52

Abstract: A method for manufacturing a display device including forming a lower electrode on a substrate; depositing a first insulation layer thereon; forming a semiconductor layer that overlaps the lower electrode thereon; depositing a second insulation layer thereon; forming a gate electrode and an etching prevention layer that overlap the semiconductor layer thereon; depositing a third insulation layer thereon; forming a first conductor that overlaps the gate electrode thereon; depositing a fourth insulation layer thereon; forming a photosensitive film patterns thereon by depositing a photosensitive film and exposing and developing the photosensitive film such that portions of the photosensitive film are removed in a first area, a second area, and a third area; etching the third insulation layer using the patterns as an etching mask; etching the etching prevention layer by using the patterns as an etching mask; and etching the first insulation layer using the patterns as an etching mask.

公开(公告)号：US10734526B2

公开(公告)日：2020-08-04

申请号：US15729120

申请日：2017-10-10

Applicant: Samsung Display Co., Ltd.

Inventor： Jong Chan Lee ,  Kyoung Won Lee ,  Woong Hee Jeong ,  Yong Su Lee

IPC: H01L29/786 ,  H01L29/49 ,  H01L21/225 ,  H01L21/265 ,  H01L21/266 ,  H01L29/423 ,  H01L29/66 ,  G02F1/1333 ,  H01L27/32 ,  G02F1/1368 ,  H01L27/12

Abstract: A display device includes: a flexible substrate; a semiconductor layer on the flexible substrate; a passivation layer on the semiconductor layer; an alignment member layer on the passivation, the alignment member layer including a first alignment member and a second alignment member in a same layer; a first insulation layer on the alignment member layer and the passivation layer; a gate electrode on the first insulation layer; a second insulation layer on the first insulation layer and the gate electrode; and a source electrode and a drain electrode on the second insulation layer and spaced apart from each other, wherein the first alignment member and the second alignment member are spaced apart from each other with the gate electrode therebetween.