公开(公告)号：US09520853B2

公开(公告)日：2016-12-13

申请号：US14641939

申请日：2015-03-09

Applicant: Raytheon Company

Inventor： Christopher M. Laighton ,  Michael T. Borkowski ,  Alan J. Bielunis

IPC: H03H7/24 ,  H01P3/08 ,  H05K1/18 ,  H05K1/11

CPC classification number: H03H7/24 ,  H01L23/66 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01P1/227 ,  H01P3/08 ,  H05K1/113 ,  H05K1/184 ,  H01L2924/00014

Abstract: An attenuator module having an attenuator disposed on a top surface of a substrate, an input terminal at one end of the attenuator and an output terminal at an opposite end of the attenuator. A pair of spaced electrical conductor pads is disposed on a bottom surface of the substrate, a first one of the pads being disposed under the input terminal and a second one of the pads being disposed under the output terminal. A pair of conductive vias passes through the substrate, one conductive via connecting the input terminal to the first one of the pads and the other conductive via connecting the output terminal to the second one of the pads. The module may be used to interconnect two adjacent circuit substrates.

Abstract translation: 衰减器模块，其具有设置在基板顶表面上的衰减器，衰减器一端的输入端和衰减器相对端的输出端。 一对间隔的电导体焊盘设置在衬底的底表面上，第一个焊盘设置在输入端子下方，第二个焊盘设置在输出端子的下方。 一对导电通孔穿过基板，一个导电通孔将输入端连接到第一个焊盘，另一个导电通孔将输出端连接到第二个焊盘。 该模块可用于互连两个相邻的电路基板。

公开(公告)号：US11146223B2

公开(公告)日：2021-10-12

申请号：US16458902

申请日：2019-07-01

Applicant: Raytheon Company

Inventor： Christopher M. Laighton ,  Susan C. Trulli ,  Elicia K. Harper

IPC: H03F3/21 ,  H03F1/32

Abstract: A power amplifier having: a plurality of N amplifier modules, where N is an integer greater than one; an M:N power splitter having M inputs, where M is an integer less than N, and N outputs, each one of the N outputs being coupled to an input of a corresponding one of the plurality of N power amplifiers; a plurality of M delay lines, each one the M delay lines having an output coupled to a corresponding one of the M inputs of the M:N power splitter, each one of the plurality of M delay lines being coupled to a common input of the power amplifier.

公开(公告)号：US20210259095A1

公开(公告)日：2021-08-19

申请号：US16794487

申请日：2020-02-19

Applicant: Raytheon Company

Inventor： Christopher M. Laighton ,  Susan C. Trulli ,  Elicia K. Harper

IPC: H05K1/02 ,  H01L23/367

Abstract: A radio frequency (RF) energy transmission line transition for coupling RF energy between a pair of RF transmission line sections disposed on intersecting surfaces of a corresponding one of a pair of conductive members, a first one of the pair of conductive members having a wall with a jog therein for receiving an end portion of a second one of the pair of conductive members, the end portion of an electrically conductive strip of the first one of the pair of radio frequency transmission line sections being disposed on, and electrically connected to, an electrically conductive strip of a second one of the pair of radio frequency transmission line sections.

公开(公告)号：US20200343616A1

公开(公告)日：2020-10-29

申请号：US16392989

申请日：2019-04-24

Applicant: Raytheon Company

Inventor： Elicia K. Harper ,  Christopher M. Laighton ,  Michael T. Borkowski

IPC: H01P7/06 ,  H01P3/02 ,  H01P3/08 ,  H01P3/00

Abstract: A first RF module has a port, such port having a first signal conductor and a first ground plane conductor. A second RF module has a port spaced from the port of the first RF module and having a second signal conductor and a second ground plane conductor. A ground bridging conductor, bridging a space between the ports of the first and second RF modules, has a first end connected to the first ground plane conductor and a second end connected to the second ground plane conductor. A signal bridging conductor, bridging the space between ports of the first and second RF modules has a first end connected to the first signal conductor and second end connected to the second signal conductor. A capacitor is connected between the ground plane bridging conductor and one of the first ground plane conductor and the second ground plane conductor.

公开(公告)号：US10785863B2

公开(公告)日：2020-09-22

申请号：US15948404

申请日：2018-04-09

Applicant: Raytheon Company

Inventor： Susan C. Trulli ,  Christopher M. Laighton

IPC: H05K1/02 ,  H05K1/18 ,  H01L23/66 ,  H01L23/367 ,  H01L25/065 ,  H01L25/00 ,  H05K3/12 ,  H01L23/538 ,  H01L21/48 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H01L25/16 ,  H01L21/56 ,  H05K3/34 ,  H01L25/18 ,  H03F1/30 ,  H01L23/373 ,  H01P3/08 ,  H01P11/00 ,  H01L23/42

Abstract: A MMIC support and cooling structure having a three-dimensional, thermally conductive support structure having a plurality of surfaces and a circuit having a plurality of heat generating electrical components disposed on a first portion of the surfaces and interconnected by microwave transmission lines disposed on a second portion of the plurality of surfaces of the thermally conductive support structure.

公开(公告)号：US20190239340A1

公开(公告)日：2019-08-01

申请号：US15884756

申请日：2018-01-31

Applicant: Raytheon Company

Inventor： Susan C. Trulli ,  Christopher M. Laighton ,  Elicia K. Harper

IPC: H05K1/02 ,  H01R13/719 ,  H05K9/00 ,  G06F1/18

Abstract: An electrically conductive shield for a microwave transmission line-electrical connector interconnect region wherein the microwave transmission line is connected to the electrical connector. An elastic, dielectric material is disposed between opposing surfaces of the dielectric structure and the housing. An electrically conductive material is disposed on an outer surface of the elastic, dielectric material to provide an electrically conductive shield. The electrically conductive shield is disposed over the opposing surfaces of the dielectric structure and the housing.

公开(公告)号：US10263566B1

公开(公告)日：2019-04-16

申请号：US15718504

申请日：2017-09-28

Applicant: Raytheon Company

Inventor： Christopher M. Laighton ,  Alan J. Bielunis ,  Edward A. Watters

IPC: H03F1/02 ,  H03F3/195 ,  H03F3/213

Abstract: An amplifier having a Radio Frequency (RF) power level detector circuit for producing a control signal in accordance with a power level of an RF input signal. The control signal indicates whether the power level of the input signal is within a predetermined range of power levels greater than zero. A bias circuit is fed by the control signal, for producing a fixed bias voltage at a gate electrode of a field effect transistor (FET) to establish a predetermined quiescent current for the FET when the control signal indicates the power level of the RF input signal is within the predetermined range of power levels and to reduce the bias voltage to reduce the predetermined quiescent current when the control signal indicates the power level of the RF input signal is below the predetermined range of power levels.

公开(公告)号：US20180130888A1

公开(公告)日：2018-05-10

申请号：US15346224

申请日：2016-11-08

Applicant: Raytheon Company

Inventor： Alan J. Bielunis ,  Istvan Rodriguez ,  Christopher M. Laighton

IPC: H01L29/417 ,  H01L27/02 ,  H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L29/423

CPC classification number: H01L29/41758 ,  H01L27/0207 ,  H01L27/088 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/20 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/78 ,  H01L29/7827 ,  H01L29/812

Abstract: A Field Effect Transistor (FET) having a substrate; a plurality of active regions disposed on the substrate; and a laterally extending finger-like control electrode disposed on a portion of a surface of the substrate. The active regions are laterally spaced one from the other successively along the laterally extending finger-like control electrode. The laterally extending finger-like control electrode controls a flow of comers through each one of the plurality of active regions between a source electrode and a drain electrode.

公开(公告)号：US09698144B2

公开(公告)日：2017-07-04

申请号：US14830148

申请日：2015-08-19

Applicant: Raytheon Company

Inventor： Istvan Rodriguez ,  Christopher M. Laighton ,  Alan J. Bielunis

IPC: H01L27/088 ,  H01L23/66 ,  H01L23/48 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L27/088 ,  H01L23/481 ,  H01L23/66 ,  H01L29/0696 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/4238 ,  H01L29/812 ,  H01L2223/6622 ,  H01L2223/6627 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A Field Effect Transistor (FET) having a plurality of FET cells having a plurality of source pads, a plurality of drain pads, and a plurality of gate electrodes disposed on a surface of a substrate; each one of the FET cells having a corresponding one of the gate electrodes disposed between one of the source pads and one of the drain pads. The FET includes; a gate contact connected to the gate electrode of each one of the FET cells; a drain contact connected to the drain pad of each one of the FET cells; and a source contact connected to source pad of each one of the FET cells. The cells are disposed in a loop configuration.

公开(公告)号：US09647310B2

公开(公告)日：2017-05-09

申请号：US14196678

申请日：2014-03-04

Applicant: Raytheon Company

Inventor： Shahed Reza ,  Keith R. Kessler ,  Christopher M. Laighton ,  Michael F. Parkes

IPC: H01P3/00 ,  H01P1/162 ,  H01P5/04

CPC classification number: H01P3/003 ,  H01P1/162 ,  H01P5/04

Abstract: A microwave structure having an input section for receiving both a common mode signal and a CPW differential mode signal; an output section; and a CPW transmission line, having a center conductor disposed between a pair of coplanar ground plane conductors, connected between the input section and the output section. The conductors of the CPW transmission line are configured to provide the common mode signal a different attenuation in passing to the output section than the CPW transmission line provides to the differential mode signal passing between the input section and the output section.