公开(公告)号：US20140251947A1

公开(公告)日：2014-09-11

申请号：US13792094

申请日：2013-03-10

Applicant: QUALCOMM INCORPORATED

Inventor： John H. HONG ,  Kenji NOMURA ,  Je-Hsiung LAN

IPC: C03C15/00

CPC classification number: C03C15/00 ,  B81C1/00547 ,  C03C2218/34 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/486 ,  H05K3/002

Abstract: A method of etching a glass substrate using an etchant that is reversibly activated to etch only in precise locations in which such etching is desired and is deactivated when outside of these locations. The method involves exposing a first side of the glass substrate to a mixture of chemical substances that includes a neutralized etchant that is photosensitive. The neutralized etchant is formed by reacting a neutralizer with an etchant. The method also includes transmitting light from a direction of a second side of the glass into the mixture of chemical substances. In response to exposure to this light, the etchant is reversibly released from a bond to the neutralizer to form the etchant on predetermined areas of the first side of the glass, wherein the predetermined areas are defined by the dimension of the light.

Abstract translation: 使用蚀刻剂蚀刻玻璃基板的方法，所述蚀刻剂可逆地激活以蚀刻仅在需要这种蚀刻的精确位置中蚀刻，并且在这些位置之外停用。 该方法包括将玻璃基板的第一侧暴露于包含光敏的中和蚀刻剂的化学物质的混合物。 中和的蚀刻剂通过使中和剂与蚀刻剂反应而形成。 该方法还包括将光从玻璃的第二侧的方向传输到化学物质的混合物中。 响应于暴露于该光，蚀刻剂从结合到可逆地释放到中和器，以在玻璃的第一侧的预定区域上形成蚀刻剂，其中预定区域由光的尺寸限定。

公开(公告)号：US20240387092A1

公开(公告)日：2024-11-21

申请号：US18317366

申请日：2023-05-15

Applicant: QUALCOMM Incorporated

Inventor： Kai LIU ,  Jui-Yi CHIU ,  Jonghae KIM ,  Nosun PARK ,  Je-Hsiung LAN

IPC: H01F17/00 ,  H01F27/02 ,  H01F27/06 ,  H01F27/255 ,  H01F27/28 ,  H01F27/29

Abstract: An inductive device includes multiple packaged devices, each including a body and a conductor layer within the body and a set of external connectors. The conductor layer of a packaged device includes a set of conductive lines electrically connected to the set of external connectors of the packaged device. Conductive lines of two packaged devices of the inductive device are at an angle relative to one another. External connectors of the packaged devices are coupled to one another to electrically connect the sets of conductive lines to define one or more coils, each coil having multiple turns and each turn including a conductive line of each packaged device.

公开(公告)号：US20240313405A1

公开(公告)日：2024-09-19

申请号：US18601578

申请日：2024-03-11

Applicant: QUALCOMM Incorporated

Inventor： Je-Hsiung LAN ,  Sang-June PARK ,  Jonghae KIM

IPC: H01Q9/04 ,  H01Q1/38

CPC classification number: H01Q9/0407 ,  H01Q1/38

Abstract: Disclosed are techniques for a structure of an antenna apparatus. In an aspect, an antenna apparatus includes a glass substrate having an upper surface, a lower surface, and a side portion; a first conductive structure on the upper surface of the glass substrate; a second conductive structure on the lower surface of the glass substrate; and a through-glass via (TGV) structure including a first conductive film on a sidewall of a first TGV hole, the first conductive film being configured to couple the first conductive structure to the second conductive structure, wherein the side portion includes a plurality of metalized recess structures having recess sidewalls and a plurality of second conductive films respectively on the recess sidewalls of the plurality of metalized recess structures, each recess sidewall having a shape corresponding to a partial TGV hole.

公开(公告)号：US20230121565A1

公开(公告)日：2023-04-20

申请号：US17450847

申请日：2021-10-14

Applicant: QUALCOMM Incorporated

Inventor： Kai LIU ,  Je-Hsiung LAN ,  Jonghae KIM

IPC: H03H9/54

Abstract: Disclosed is a radio frequency (RF) filter that vertically integrates an acoustic die with inductors formed in one or more layers above the acoustic die. The acoustic die may be over-molded so that the acoustic dome, important for maintaining acoustic integrity, may be protected.

公开(公告)号：US20220069797A1

公开(公告)日：2022-03-03

申请号：US17008320

申请日：2020-08-31

Applicant: QUALCOMM Incorporated

Inventor： Jonghae KIM ,  Je-Hsiung LAN ,  Ranadeep DUTTA

IPC: H03H9/05 ,  H03H3/02 ,  H03H3/08 ,  H03H9/10 ,  H03H9/205 ,  H03H9/25 ,  H03H9/56 ,  H03H9/64 ,  H03H9/70 ,  H03H9/72

Abstract: A substrate that includes an encapsulation layer, a first acoustic resonator, a second acoustic resonator, at least one first dielectric layer, a plurality of first interconnects, at least one second dielectric layer, and a plurality of second interconnects. The first acoustic resonator is located in the encapsulation layer. The first acoustic resonator includes a first piezoelectric substrate comprising a first thickness. The second acoustic is located in the encapsulation layer. The second acoustic resonator includes a second piezoelectric substrate comprising a second thickness that is different than the first thickness. The at least one first dielectric layer is coupled to a first surface of the encapsulation layer. The plurality of first interconnects is coupled to the first surface of the encapsulation layer. The plurality of first interconnects is located at least in the at least one first dielectric layer.

公开(公告)号：US20220014176A1

公开(公告)日：2022-01-13

申请号：US16922471

申请日：2020-07-07

Applicant: QUALCOMM Incorporated

Inventor： Je-Hsiung LAN ,  Jonghae KIM

IPC: H03H9/46

Abstract: Disclosed is a gallium arsenide (GaAs) enabled tunable filter for, e.g., 6 GHz Wi-Fi RF Frontend, with integrated high-performance varactors, metal-insulator-metal (MIM) capacitors, and 3D solenoid inductors. The tunable filter comprises a hyper-abrupt variable capacitor (varactor) high capacitance tuning ratio. The tunable filter also comprises a GaAs substrate in which through-GaAs-vias (TGV) are formed. The varactor along with the MIM capacitors and the 3D inductors is formed in an upper conductive structure on upper surface of the GaAs substrate. Lower conductive structure comprising lower conductors is formed on lower surface of the GaAs substrate. Electrical coupling between the lower and upper conductive structures is provided by the TGVs. The tunable filter can be integrated with radio frequency front end (RFFE) devices.

公开(公告)号：US20210399404A1

公开(公告)日：2021-12-23

申请号：US16910025

申请日：2020-06-23

Applicant: QUALCOMM Incorporated

Inventor： Je-Hsiung LAN ,  Sang-June PARK ,  Jonghae KIM

IPC: H01Q1/12 ,  H01Q13/18 ,  H01Q23/00

Abstract: Disclosed is an antenna on glass (AOG) device having an air cavity at least partially formed in a photosensitive glass substrate. An air cavity structure is at least partially encloses the air cavity and wherein the air cavity structure at least partially formed from the photosensitive glass substrate. An antenna is formed from portion of a top conductive layer disposed on a top surface of the air cavity structure and at least partially overlapping the air cavity. A metallization structure is provided having a bottom conductive layer disposed on a bottom surface of the air cavity structure, wherein the bottom conductive layer is electrically coupled to the top metal layer by a conductive pillar disposed through the photosensitive glass substrate. In addition, the AOG device may integrate one or more MIM capacitors and/or inductors that allow for RF filtering and impedance matching.

公开(公告)号：US20210391321A1

公开(公告)日：2021-12-16

申请号：US16899811

申请日：2020-06-12

Applicant: QUALCOMM Incorporated

Inventor： Ranadeep DUTTA ,  Je-Hsiung LAN ,  Jonghae KIM

IPC: H01L27/06 ,  H01L21/8252

Abstract: A semiconductor device having metamorphic high electron mobility transistor (HEMT)-heterojunction bipolar transistor (HBT) integration on a semiconductor substrate. An example semiconductor device generally includes a semiconductor substrate, a bipolar junction transistor (BJT) disposed above the semiconductor substrate and comprising indium, and a HEMT disposed above the semiconductor substrate and comprising indium.

公开(公告)号：US20210175181A1

公开(公告)日：2021-06-10

申请号：US16706167

申请日：2019-12-06

Applicant: QUALCOMM Incorporated

Inventor： Jonghae KIM ,  Je-Hsiung LAN ,  Ranadeep DUTTA

IPC: H01L23/552 ,  H01L25/16 ,  H01L23/00

Abstract: Improve EM coupling for the wafer-bonding process from a first wafer to a second wafer by a shielding technique. Examples may include building an EM shield implemented by BEOL-stacks/routings, bonding contacts, and TSVs for a closed-loop shielding platform for the integrated device to minimize EM interference from active devices due to eddy currents. The shield may be implemented in the active device layer during a wafer-to-wafer bonding-process that uses two different device layers/wafers, an active device layer/wafer and a passive device layer/wayer. The shield may be designed by the patterned routings for both I/O ports and the GND contacts.

公开(公告)号：US20210159873A1

公开(公告)日：2021-05-27

申请号：US16692774

申请日：2019-11-22

Applicant: QUALCOMM Incorporated

Inventor： Je-Hsiung LAN ,  Jonghae KIM ,  Ranadeep DUTTA

IPC: H03H9/02 ,  H01L41/18 ,  H01L41/04 ,  H03H9/17 ,  H03H9/54 ,  H03H3/007

Abstract: Certain aspects provide an integrated circuit (IC) including a resonator. One example IC generally includes a substrate, a first oxide region disposed above the substrate, and a resonator. The resonator may include a piezoelectric layer, a second oxide region disposed below the piezoelectric layer and bonded to the first oxide region, and a cavity in the second oxide region, wherein at least a portion of the second oxide region is below the cavity.