公开(公告)号：US09268634B2

公开(公告)日：2016-02-23

申请号：US14109959

申请日：2013-12-18

Applicant: PHISON ELECTRONICS CORP.

Inventor： Wei Lin ,  Shao-Wei Yen ,  Yu-Hsiang Lin ,  Kuo-Hsin Lai ,  Kuo-Yi Cheng

IPC: G06F11/00 ,  G06F11/10

CPC classification number: G06F11/1008 ,  G06F11/1048

Abstract: A decoding method, a memory storage device and a memory controlling circuit unit are provided. The method includes: reading memory cells according to a first reading voltage to obtain first verifying bits; executing a decoding procedure including a probability decoding algorithm according to the first verifying bits to obtain first decoded bits, and determining whether a decoding is successful by using the decoded bits; if the decoding is failed, reading the memory cells according to a second reading voltage to obtain second verifying bits, and executing the decoding procedure according to the second verifying bits to obtain second decoded bits. The second reading voltage is different from the first reading voltage, and the number of the second reading voltage is equal to the number of the first reading voltage. Accordingly, the ability for correcting errors is improved.

Abstract translation: 提供了解码方法，存储器存储装置和存储器控制电路单元。 该方法包括：根据第一读取电压读取存储器单元以获得第一验证位; 执行包括根据第一验证位的概率解码算法的解码过程以获得第一解码比特，并且通过使用解码比特来确定解码是否成功; 如果解码失败，则根据第二读取电压读取存储器单元以获得第二验证位，并且根据第二验证位执行解码过程以获得第二解码位。 第二读取电压与第一读取电压不同，第二读取电压的数量等于第一读取电压的数量。 因此，能够提高校正误差的能力。

公开(公告)号：US09007829B2

公开(公告)日：2015-04-14

申请号：US13778055

申请日：2013-02-26

Applicant: Phison Electronics Corp.

Inventor： Wei Lin ,  Yu-Cheng Hsu ,  Kuo-Yi Cheng ,  Chun-Yen Chang

IPC: G11C29/04 ,  G11C29/00 ,  G11C16/14 ,  G11C16/34

CPC classification number: G11C29/82 ,  G11C16/14 ,  G11C16/349 ,  G11C29/04 ,  G11C2029/0409

Abstract: A memory repairing method for a rewritable non-volatile memory module and a memory controller and a memory storage apparatus are provided. The method includes monitoring a wear degree of the rewritable non-volatile memory module; determining whether the wear degree of the rewritable non-volatile memory module is larger than a threshold; and heating the rewritable non-volatile memory module such that the temperature of the rewritable non-volatile memory module lies in between 100° C.˜600° C. if the wear degree of the rewritable non-volatile memory module is larger than the threshold. Accordingly, deteriorated memory cells in the rewritable non-volatile memory module can be repaired, thereby preventing data loss.

Abstract translation: 提供了一种用于可重写非易失性存储器模块和存储器控制器和存储器存储装置的存储器修复方法。 该方法包括监视可重写非易失性存储器模块的磨损程度; 确定可重写非易失性存储器模块的磨损程度是否大于阈值; 并且加热可重写非易失性存储器模块，使得可重写非易失性存储器模块的温度在100℃至600℃之间，如果可重写非易失性存储器模块的磨损程度大于阈值 。 因此，可以修复可重写非易失性存储器模块中的劣化的存储单元，从而防止数据丢失。

公开(公告)号：US20140160844A1

公开(公告)日：2014-06-12

申请号：US13778055

申请日：2013-02-26

Applicant: PHISON ELECTRONICS CORP.

Inventor： Wei Lin ,  Yu-Cheng Hsu ,  Kuo-Yi Cheng ,  Chun-Yen Chang

IPC: G11C29/04 ,  G11C16/14

CPC classification number: G11C29/82 ,  G11C16/14 ,  G11C16/349 ,  G11C29/04 ,  G11C2029/0409

Abstract: A memory repairing method for a rewritable non-volatile memory module and a memory controller and a memory storage apparatus are provided. The method includes monitoring a wear degree of the rewritable non-volatile memory module; determining whether the wear degree of the rewritable non-volatile memory module is larger than a threshold; and heating the rewritable non-volatile memory module such that the temperature of the rewritable non-volatile memory module lies in between 100° C.˜600° C. if the wear degree of the rewritable non-volatile memory module is larger than the threshold. Accordingly, deteriorated memory cells in the rewritable non-volatile memory module can be repaired, thereby preventing data loss.

Abstract translation: 提供了一种用于可重写非易失性存储器模块和存储器控制器和存储器存储装置的存储器修复方法。 该方法包括监视可重写非易失性存储器模块的磨损程度; 确定可重写非易失性存储器模块的磨损程度是否大于阈值; 并且加热可重写非易失性存储器模块，使得可重写非易失性存储器模块的温度在100℃至600℃之间，如果可重写非易失性存储器模块的磨损程度大于阈值 。 因此，可以修复可重写非易失性存储器模块中的劣化的存储单元，从而防止数据丢失。