公开(公告)号：US06172296B2

公开(公告)日：2001-01-09

申请号：US08857907

申请日：1997-05-16

申请人： Yukiko Iwasaki ,  Kozo Arao ,  Masafumi Sano ,  Takaharu Kondo

发明人： Yukiko Iwasaki ,  Kozo Arao ,  Masafumi Sano ,  Takaharu Kondo

IPC分类号： H01L310216

CPC分类号： H01L31/0236 ,  H01L31/02168 ,  H01L31/02366 ,  H01L31/056 ,  Y02E10/52

摘要： A photovoltaic cell in accordance with the present invention includes at least a metal layer, a semiconductive layer and a transparent electrode formed on a substrate. The metal layer is composed of a metal mainly containing aluminum; and has an x-ray diffraction pattern in which a (111) peak intensity is enhanced to at least 2.1 times a (200) peak intensity, at least 4.4 times a (220) peak intensity and at least 4.1 times a (311) peak intensity. The metal layer essentially consists of an aluminum-titanium alloy or an aluminum-magnesium alloy. An interlayer may be provided between the metal layer and the substrate.

摘要翻译： 根据本发明的光伏电池至少包括形成在基板上的金属层，半导体层和透明电极。 金属层由主要含有铝的金属组成; 并且具有其中（111）峰强度增强至（200）峰强度的至少2.1倍，（220）峰强度的至少4.4倍和至少4.1倍（311）峰的x射线衍射图 金属层主要由铝 - 钛合金或铝 - 镁合金组成。 可以在金属层和基板之间设置中间层。

公开(公告)号：US6132817A

公开(公告)日：2000-10-17

申请号：US822607

申请日：1997-03-19

申请人： Nobuo Tokutake ,  Masafumi Sano ,  Ryo Hayashi ,  Makoto Higashikawa

发明人： Nobuo Tokutake ,  Masafumi Sano ,  Ryo Hayashi ,  Makoto Higashikawa

IPC分类号： H01L31/04 ,  H01L21/304 ,  H01L31/0392 ,  H01L31/052 ,  H01L31/076 ,  H01L31/20 ,  B05D3/10 ,  H05H1/24

CPC分类号： H01L31/076 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of manufacturing a photoelectric transducer forms a functional film on a conductive substrate. The method comprises applying ultrasonic cleaning with a cleaning liquid containing water to the conductive substrate, then allowing the surface of the conductive substrate to contact purified water so as to import uniform oxidation and then forming the functional film thereon. The functional film is characterized in being formed with a metal layer as light-reflecting layer, a reflection enhancing layer, and a semiconductor photovoltaic device layer, prepared by a plasma CVD method, comprising a non-monocrystalline material containing silicon atoms as the matrix.

摘要翻译： 光电转换器的制造方法在导电性基板上形成功能膜。 该方法包括将超声波清洗用含有水的清洗液施加到导电性基材上，然后使导电性基材的表面与净化水接触，进行均匀氧化，然后在其上形成功能膜。 功能膜的特征在于，通过等离子体CVD法制备的金属层作为光反射层，反射增强层和半导体光电器件层，其包含含有硅原子作为基体的非单晶材料。

公开(公告)号：US5429685A

公开(公告)日：1995-07-04

申请号：US150813

申请日：1993-11-12

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Ryo Hayashi ,  Masahiko Tonogaki

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Ryo Hayashi ,  Masahiko Tonogaki

IPC分类号： H01L31/0392 ,  H01L31/052 ,  H01L31/065 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0376 ,  H01L31/0384

CPC分类号： H01L31/065 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1884 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S136/293

摘要： The present invention provides a photovoltaic element in which the open-circuit voltage and the path length of holes are improved by preventing the recombination of photoexcited carriers.The p-i-n junction type photovoltaic element is composed of a p-type layer, an i-type layer of a laminated structure consisting of an i-type layer formed by RF plasma CVD on the p-type layer side and an i-type layer formed by microwave (.mu.W) CVD on the n-type layer side, or an i-type layer formed by microwave (.mu.W) plasma CVD on the p-type layer side and an i-type layer formed by RF plasma CVD on the n-type layer side, characterized in that the i-type layer formed by .mu.W plasma CVD is formed by a process in which a lower .mu.W energy and a higher RF energy than the .mu.W energy needed to decompose 100% of the source gas are simultaneously applied to a source gas containing Si and Ge at a pressure of 50 mTorr or less, such that the minimum value of the bandgap is shifted toward the p-type layer side, away from the center of the i-type layer, and the i-type layer formed by RF plasma CVD is formed 30 nm thick or less by using a source gas containing a silicon-containing gas at a deposition rate of 2 nm/sec or less.

摘要翻译： 本发明提供一种光电元件，其中通过防止光激发载流子的复合，提高了开路电压和空穴的路径长度。 pin结型光电元件由p型层，由p型层侧的RF等离子体CVD形成的i型层构成的层叠结构的i型层和形成为i型层的i型层构成 通过在n型层侧的微波（μW）CVD或在p型层侧由微波（μW）等离子体CVD形成的i型层和通过RF等离子体CVD形成的i型层 n型层侧，其特征在于，通过以下步骤形成由μW等离子体CVD形成的i型层，其中相比于分解100％的源所需的μW能量较低的μW能量和较高的RF能量 在50mTorr以下的压力下将气体同时施加到含有Si和Ge的源气体，使得带隙的最小值朝着p型层侧偏离i型层的中心， 通过使用含有含硅气体的源气体，通过RF等离子体CVD形成的i型层形成为30nm以下 速度为2nm / sec以下。

公开(公告)号：US5397395A

公开(公告)日：1995-03-14

申请号：US295487

申请日：1994-08-25

申请人： Masafumi Sano ,  Masahiro Kanai

发明人： Masafumi Sano ,  Masahiro Kanai

IPC分类号： H01L21/205 ,  C23C16/50 ,  C23C16/511 ,  C23C16/54 ,  H01L31/04 ,  C23C16/48

CPC分类号： C23C16/511 ,  C23C16/545

摘要： A method and apparatus for forming a large area functional deposited film by a microwave PCVD method by continuously moving an elongated member in its lengthwise direction, and forming a columnar film-forming chamber the side wall of which is an intermediate portion of the moving elongated member. A deposited film forming raw material gas is introduced into the film-forming space via a gas supply device. Microwave plasma in the film-forming space is generated by radiating microwave energy from a microwave applicator while continuously, at the same time as that of the introduction of the raw material gas, moving a movable sheet made of a dielectric material which is positioned in contact with a microwave introduction opening and the surface of the microwave introduction opening. A deposited film can then be formed on the surface of the elongated member which constitutes the side wall and which is being continuously moved, the side wall constituted by the elongated member being exposed to the microwave plasma.

摘要翻译： 一种通过微波PCVD法形成大面积功能沉积膜的方法和装置，其通过在长度方向连续移动细长构件，并形成柱状成膜室，其侧壁是移动细长构件的中间部分 。 沉积的成膜原料气体经由气体供给装置引入成膜空间。 在成膜空间中的微波等离子体通过从微波施加器发射微波能量而产生，同时连续地引入原料气体的微波等离子体，移动由接触位置的介电材料制成的可动片材 微波引入开口和微波引入开口的表面。 然后可以在构成侧壁并被连续移动的细长构件的表面上形成沉积膜，由细长构件构成的侧壁暴露于微波等离子体。

公开(公告)号：US5248621A

公开(公告)日：1993-09-28

申请号：US778669

申请日：1991-10-18

申请人： Masafumi Sano

发明人： Masafumi Sano

IPC分类号： H01L31/0236 ,  H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/0236 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S117/915 ,  Y10S148/012

摘要： A solar cell device is produced by forming at least one semiconductor layer of single crystalline material having an uneven surface on a substrate. A photovoltaic element utilizing the semiconductor layer is formed and bonded to another substrate. The produced solar cell device has a large area, high conversion efficiency and may be mass produced at low cost.

摘要翻译： 通过在基板上形成具有不平坦表面的单晶材料的至少一个半导体层来制造太阳能电池器件。 利用该半导体层的光电元件形成并结合到另一基板。 所生产的太阳能电池器件具有面积大，转换效率高，并且可以以低成本批量生产。

公开(公告)号：US4920387A

公开(公告)日：1990-04-24

申请号：US406182

申请日：1989-09-13

申请人： Katsuji Takasu ,  Masafumi Sano ,  Hisanori Tsuda ,  Yutaka Hirai

发明人： Katsuji Takasu ,  Masafumi Sano ,  Hisanori Tsuda ,  Yutaka Hirai

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/18

CPC分类号： H01L33/18 ,  B82Y20/00 ,  H01L33/0012 ,  H01L33/0058 ,  H01L33/06 ,  H05B33/145

摘要： A light emitting device includes a luminescent layer having at least two layers comprising non-single crystalline silicon containing hydrogen atoms laminated and having a homo-junction, and at least a pair of electrodes connected electrically to the luminescent layer, the non-single crystalline silicon layer having an optical band gap of 2.0 eV or higher and a localized level density at mid-gap of 10.sup.16 cm.sup.-3.eV.sup.-1 or less.

摘要翻译： 发光器件包括发光层，其具有至少两层，包含层叠并具有均聚点的氢原子的非单晶硅，以及至少一对与发光层电连接的电极，非单晶硅 具有2.0eV以上的光学带隙和1016cm -3eV-1以下的中间间隙的局部水平密度的层。

公开(公告)号：US4906543A

公开(公告)日：1990-03-06

申请号：US184872

申请日：1988-04-21

申请人： Tatsuyuki Aoike ,  Masafumi Sano ,  Takehito Yoshino ,  Toshimitsu Kariya ,  Hiroaki Niino

发明人： Tatsuyuki Aoike ,  Masafumi Sano ,  Takehito Yoshino ,  Toshimitsu Kariya ,  Hiroaki Niino

IPC分类号： G03G5/082

CPC分类号： G03G5/08228

摘要： There is provided an improved light receiving member for electrophotography which is made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on said aluminum support, wherein said multilayered light receiving layer consists of a lower layer in contact with said support and an upper layer, said lower layer being made of an inorganic material containing at least aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H), and having a part in which said aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, said upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X), and containing at least either of germanium atoms or tin atoms in a layer region in contact with said lower layer. The light receiving member for electrophotography exhibits outstanding electric characteristics, optical characteristics, photoconductive characteristics, durability, image characteristics, and adaptability to use environments.

公开(公告)号：US08541944B2

公开(公告)日：2013-09-24

申请号：US13417483

申请日：2012-03-12

申请人： Masafumi Sano ,  Kenji Takahashi

发明人： Masafumi Sano ,  Kenji Takahashi

IPC分类号： H01L51/50 ,  H01L51/52 ,  H01L51/54

CPC分类号： H01L29/7869 ,  H01L27/3244

摘要： A transistor includes a source terminal and a drain terminal, an active layer having an oxide containing In, a gate electrode, and a gate insulating layer between the gate electrode and the active layer. The gate insulating layer contains hydrogen in an amount of less than 3×1021 atoms/cm3, and an electron carrier concentration of the active layer is less than 1018/cm3.

摘要翻译： 晶体管包括源极端子和漏极端子，在栅极电极和有源层之间具有含有In，栅极电极和栅极绝缘层的氧化物的有源层。 栅极绝缘层含有小于3×1021原子/ cm3的氢，活性层的电子载流子浓度小于1018 / cm3。

公开(公告)号：US08436349B2

公开(公告)日：2013-05-07

申请号：US12524138

申请日：2008-02-18

申请人： Masafumi Sano ,  Ryo Hayashi

发明人： Masafumi Sano ,  Ryo Hayashi

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： In a process for fabricating a thin-film transistor in which a gate electrode 4 is to be formed on a substrate 1, the process has the steps of forming the gate electrode 4 on the substrate 1, forming a metal oxide layer 7 in such a way as to cover the gate electrode 4, forming a source electrode 6 and a drain electrode 5, and carrying out annealing in an inert gas to change part of the metal oxide layer 7 into a channel region.

摘要翻译： 在基板1上形成栅电极4的薄膜晶体管的制造工序中，具有如下步骤：在基板1上形成栅电极4，在该基板1上形成金属氧化物层7 以覆盖栅电极4的方式形成源电极6和漏电极5，并且在惰性气体中进行退火以将金属氧化物层7的一部分改变为沟道区。

公开(公告)号：US08168974B2

公开(公告)日：2012-05-01

申请号：US12882647

申请日：2010-09-15

申请人： Masafumi Sano ,  Katsumi Nakagawa ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

发明人： Masafumi Sano ,  Katsumi Nakagawa ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L31/20

CPC分类号： H01L29/51 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/7869

摘要： A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10−18/cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.

摘要翻译： 提供了一种采用无定形氧化物的新型场效应晶体管。 在本发明的一个实施例中，晶体管包括含有浓度小于1×10-18 / cm3的电子载流子的无定形氧化物层，栅极绝缘层由与非晶氧化物接触的第一层 以及与第一层不同的第二层。