发明授权
US6132817A Method of manufacturing photoelectric transducer with improved
ultrasonic and purification steps
失效
制造具有改进的超声波和净化步骤的光电传感器的方法
- 专利标题: Method of manufacturing photoelectric transducer with improved ultrasonic and purification steps
- 专利标题(中): 制造具有改进的超声波和净化步骤的光电传感器的方法
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申请号: US822607申请日: 1997-03-19
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公开(公告)号: US6132817A公开(公告)日: 2000-10-17
- 发明人: Nobuo Tokutake , Masafumi Sano , Ryo Hayashi , Makoto Higashikawa
- 申请人: Nobuo Tokutake , Masafumi Sano , Ryo Hayashi , Makoto Higashikawa
- 申请人地址: JPX Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX5-352623 19931230
- 主分类号: H01L31/04
- IPC分类号: H01L31/04 ; H01L21/304 ; H01L31/0392 ; H01L31/052 ; H01L31/076 ; H01L31/20 ; B05D3/10 ; H05H1/24
摘要:
A method of manufacturing a photoelectric transducer forms a functional film on a conductive substrate. The method comprises applying ultrasonic cleaning with a cleaning liquid containing water to the conductive substrate, then allowing the surface of the conductive substrate to contact purified water so as to import uniform oxidation and then forming the functional film thereon. The functional film is characterized in being formed with a metal layer as light-reflecting layer, a reflection enhancing layer, and a semiconductor photovoltaic device layer, prepared by a plasma CVD method, comprising a non-monocrystalline material containing silicon atoms as the matrix.
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