公开(公告)号：US20180337292A1

公开(公告)日：2018-11-22

申请号：US15983671

申请日：2018-05-18

Applicant: LG Electronics Inc.

Inventor： Kyoungsoo LEE ,  Sunghyun HWANG ,  Sangwook PARK

IPC: H01L31/0216 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/20 ,  H01L31/0747

CPC classification number: H01L31/02167 ,  H01L31/02363 ,  H01L31/0747

Abstract: A solar cell includes: a semiconductor substrate including an uneven portion, the uneven portion being located on at least one of a front surface or a rear surface of the semiconductor substrate; a passivation layer disposed on the uneven portion; and an oxide layer disposed between the passivation layer and the uneven portion of the semiconductor substrate, the oxide layer including amorphous oxide.

公开(公告)号：US20180204737A1

公开(公告)日：2018-07-19

申请号：US15866052

申请日：2018-01-09

Applicant: LG ELECTRONICS INC.

Inventor： Kyoungsoo LEE ,  Sunghyun HWANG ,  Sangwook PARK

IPC: H01L21/3205 ,  H01L31/072 ,  H01L21/02 ,  H01L21/28

Abstract: A method of manufacturing a solar cell is disclosed. The method of manufacturing the solar cell includes depositing an intrinsic amorphous silicon layer on a surface of a semiconductor substrate, depositing an amorphous silicon layer containing impurities on the intrinsic amorphous silicon layer to form a conductive region, and forming an electrode electrically connected to the conductive region. The depositing of the intrinsic amorphous silicon layer includes depositing the intrinsic amorphous silicon on the surface of the semiconductor substrate at a deposition rate of 0.5 nm/sec to 2.0 nm/sec.

公开(公告)号：US20180138343A1

公开(公告)日：2018-05-17

申请号：US15816687

申请日：2017-11-17

Applicant: LG ELECTRONICS INC.

Inventor： Jinhyung LEE ,  Sangwook PARK

IPC: H01L31/05 ,  H01L31/0224

CPC classification number: H01L31/0508 ,  H01L31/022433 ,  H01L31/022466 ,  Y02E10/50

Abstract: Disclosed is a solar cell panel including a plurality of solar cells including a first solar cell and a second solar cell. Each of the first and second solar cells includes a semiconductor substrate, a first conductive area disposed on a first surface of the semiconductor substrate, a second conductive area disposed on a second surface of the semiconductor substrate which is opposite the first surface of the semiconductor substrate, a first transparent electrode layer disposed on the first conductive area, a second transparent electrode layer disposed on the second conductive area, and a plurality of interconnectors spaced apart from one another at a constant pitch on the first transparent electrode layer so as to extend in a given direction. Each of the first and second solar cells lacks a metal electrode intersecting the plurality of interconnectors on the semiconductor substrate.

公开(公告)号：US20180097127A1

公开(公告)日：2018-04-05

申请号：US15835194

申请日：2017-12-07

Applicant: LG ELECTRONICS INC.

Inventor： Seunghwan SHIM ,  Kisu KIM ,  Eunae YOON ,  Yuju HWANG ,  Younghyun LEE ,  Sangwook PARK

IPC: H01L31/0216 ,  H01L31/068 ,  H01L31/0236 ,  H01L31/0224

CPC classification number: H01L31/02168 ,  H01L31/022433 ,  H01L31/02363 ,  H01L31/068 ,  Y02E10/547

Abstract: A solar cell includes a substrate formed of n-type single crystal silicon, an emitter region of a p-type which is positioned at a first surface of the substrate and includes a first emitter region having a first sheet resistance and a second emitter region having a second sheet resistance less than the first sheet resistance, a plurality of surface field regions of the n-type locally positioned at a second surface opposite the first surface of the substrate, a plurality of first electrodes which are positioned only on the second emitter region to be separated from one another and are connected to the second emitter region, and a plurality of second electrodes which are positioned on the plurality of surface field regions to be separated from one another and are connected to the plurality of surface field regions.

公开(公告)号：US20170179333A1

公开(公告)日：2017-06-22

申请号：US15381751

申请日：2016-12-16

Applicant: LG ELECTRONICS INC.

Inventor： Kyoungsoo LEE ,  Sangwook PARK

IPC: H01L31/20 ,  H01L31/18

CPC classification number: H01L31/208 ,  H01L31/022425 ,  H01L31/0376 ,  H01L31/03767 ,  H01L31/0747 ,  H01L31/1884 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/50

Abstract: Disclosed is a manufacturing method of a solar cell, including forming a photoelectric converter including an amorphous semiconductor layer, forming an electrode connected to the photoelectric converter, and performing a post-treatment by providing light to the photoelectric converter and the electrode.

公开(公告)号：US20170179332A1

公开(公告)日：2017-06-22

申请号：US15381529

申请日：2016-12-16

Applicant: LG ELECTRONICS INC.

Inventor： Kyoungsoo LEE ,  Sangwook PARK ,  Jinhyung LEE

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/0224 ,  H01L31/072

CPC classification number: H01L31/0682 ,  H01L31/02167 ,  H01L31/022433 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/072 ,  H01L31/074 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1884 ,  Y02E10/50

Abstract: Disclosed herein are a solar cell and a method of manufacturing the same. The solar cell module includes a semiconductor substrate, a first passivation film located on a front surface of the semiconductor substrate, a second passivation film located on a rear surface of the semiconductor substrate, a front electric field region located on the first passivation film on the front surface of the semiconductor substrate and being of a same conductivity-type as that of the semiconductor substrate, an emitter region located on the second passivation film on the rear surface of the semiconductor substrate and being of a conductivity-type opposite that of the semiconductor substrate, first electrodes conductively connected to the front electric field region, and second electrode conductively connected to the emitter region.

公开(公告)号：US20160197209A1

公开(公告)日：2016-07-07

申请号：US15066812

申请日：2016-03-10

Applicant: LG Electronics Inc.

Inventor： Yoonsil JIN ,  Heejin NAM ,  Sangwook PARK

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/02168 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for manufacturing a solar cell according to an embodiment of the invention includes forming an emitter layer having an emitter dopant of a second conductive type opposite to a first conductive type on a first surface on a semiconductor substrate; forming a passivation layer including a first dopant of the first conductive type on a second surface of the semiconductor substrate; forming a back surface field layer including a first portion on the second surface by locally heating a portion of the passivation layer using a laser; and forming an electrode electrically connected to the first portion of the back surface field layer through an opening of the passivation layer after the first portion of the back surface field layer is formed on the second surface, wherein the back surface field layer is locally formed between the electrode and the second surface.

Abstract translation: 根据本发明的实施例的太阳能电池的制造方法包括在半导体衬底的第一表面上形成具有与第一导电类型相反的第二导电类型的发射极掺杂剂的发射极层; 在所述半导体衬底的第二表面上形成包括所述第一导电类型的第一掺杂剂的钝化层; 通过使用激光局部加热所述钝化层的一部分，在所述第二表面上形成包括第一部分的背面场层; 以及在所述第二表面上形成在所述背面场层的所述第一部分之后通过所述钝化层的开口电连接到所述背表面场层的所述第一部分的电极，其中所述背面场层局部形成在 电极和第二表面。

公开(公告)号：US20150179837A1

公开(公告)日：2015-06-25

申请号：US14478841

申请日：2014-09-05

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Sangwook PARK ,  Junyong AHN ,  Manhyo HA

IPC: H01L31/0224 ,  H01L31/02 ,  H01L31/0216

CPC classification number: H01L31/022433 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/068 ,  Y02E10/547

Abstract: A solar cell is discussed. The solar cell includes a semiconductor substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type, which is positioned at a front surface of the semiconductor substrate, a front passivation part positioned on a front surface of the emitter region, a front electrode part which passes through the front passivation part and is electrically connected to the emitter region, a back passivation part positioned on a back surface of the semiconductor substrate, and a back electrode part which passes through the back passivation part and is electrically connected to the semiconductor substrate. The front passivation part and the back passivation part each include a silicon oxide layer. One of the front passivation part and the back passivation part includes an aluminum oxide layer.

Abstract translation: 讨论太阳能电池。 太阳能电池包括位于半导体衬底的前表面的第一导电类型的半导体衬底，与第一导电类型相反的第二导电类型的发射极区域，位于第一导电类型的前表面上的前钝化部分 发射极区域，穿过前钝化部分并与发射极区域电连接的前电极部分，位于半导体衬底背面的背面钝化部分和穿过背部钝化部分的背面电极部分， 电连接到半导体衬底。 前钝化部分和后钝化部分都包括氧化硅层。 前钝化部分和后钝化部分之一包括氧化铝层。

公开(公告)号：US20140202526A1

公开(公告)日：2014-07-24

申请号：US14151478

申请日：2014-01-09

Applicant: LG ELECTRONICS INC.

Inventor： Eunhye YOUN ,  Sangwook PARK ,  Seunghwan SHIM ,  Yujin LEE

IPC: H01L31/065 ,  H01L31/0376 ,  H01L31/0368 ,  H01L31/18 ,  H01L31/0352

CPC classification number: H01L31/065 ,  H01L31/035272 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/068 ,  H01L31/1824 ,  Y02E10/547

Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate containing impurities of a first conductive type, an emitter region which is positioned at a front surface of the substrate and contains impurities of a second conductive type opposite the first conductive type, a back passivation layer which is positioned on a back surface of the substrate and has openings, a back surface field region containing impurities of the first conductive type, a first electrode connected to the emitter region, and a second electrode connected to the back surface field region. The back surface field region includes a first back surface field region positioned on the back passivation layer and a second back surface field region, which is positioned at the back surface of the substrate exposed by the openings of the back passivation layer.

Abstract translation: 讨论太阳能电池及其制造方法。 太阳能电池包括含有第一导电类型的杂质的基板，位于基板的前表面的发射极区域，并且包含位于第一导电类型的第二导电类型的第二导电类型的杂质; 并且具有开口，包含第一导电类型的杂质的背面场区域，连接到发射极区域的第一电极和连接到背面场区域的第二电极。 背面场区域包括位于背面钝化层上的第一背面场区域和位于由背面钝化层的开口暴露的衬底背面的第二背面场区域。