公开(公告)号：US20150236176A1

公开(公告)日：2015-08-20

申请号：US14700451

申请日：2015-04-30

申请人： LG ELECTRONICS INC.

发明人： Kyoungsoo LEE ,  Seongeun LEE

IPC分类号： H01L31/0376

CPC分类号： H01L31/0376 ,  H01L25/042 ,  H01L27/142 ,  H01L31/022425 ,  H01L31/04 ,  H01L31/06 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1876 ,  H01L2924/0002 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

摘要： A method for manufacturing a solar cell according to an embodiment of the present invention includes preparing a semiconductor substrate having a first conductivity type dopant; ion-implanting a pre-amorphization elements into a front surface of the semiconductor substrate to form an amorphous layer; and forming an emitter layer by ion-implanting second conductivity type dopant into the front surface of the semiconductor substrate. The method then further includes heat-treating the layers to activate the second conductivity type dopant. The method further includes forming a back surface field layer at a back surface of the semiconductor substrate by ion-implanting a first conductivity type dopant.

摘要翻译： 根据本发明实施例的太阳能电池的制造方法包括制备具有第一导电型掺杂剂的半导体衬底; 将前非晶化元件离子注入半导体衬底的前表面以形成非晶层; 以及通过将第二导电型掺杂剂离子注入到所述半导体衬底的前表面中形成发射极层。 然后该方法还包括热处理层以激活第二导电型掺杂剂。 该方法还包括通过离子注入第一导电型掺杂剂在半导体衬底的背面形成背表面场层。

公开(公告)号：US20150364351A1

公开(公告)日：2015-12-17

申请号：US14741286

申请日：2015-06-16

申请人： LG ELECTRONICS INC.

发明人： Kyoungsoo LEE ,  Minho CHOI ,  Jinhyung LEE ,  Gyeayoung KWAG ,  Sangwook PARK

IPC分类号： H01L21/67 ,  H01L21/677 ,  H05B3/00

CPC分类号： H01L21/67115 ,  H01L21/6776 ,  H01L31/1864 ,  H05B3/0047 ,  Y02E10/50 ,  Y02P70/521

摘要： A post-processing apparatus of a solar cell is discussed. The post-processing apparatus carries out a post-processing operation including a main period for heat-treating a solar cell including a semiconductor substrate while providing light to the solar cell. The post-processing apparatus includes a main section to carry out the main period. The main section includes a first heat source unit to provide heat to the semiconductor substrate and a light source unit to provide light to the semiconductor substrate. The first heat source unit and the light source unit are positioned in the main section. The light source unit includes a light source constituted by a plasma lighting system (PLS).

摘要翻译： 讨论太阳能电池的后处理装置。 后处理装置执行后处理操作，该后处理操作包括用于对包括半导体衬底的太阳能电池进行热处理的主要周期，同时向太阳能电池提供光。 后处理装置包括执行主时段的主要部分。 主要部分包括向半导体衬底提供热量的第一热源单元和向半导体衬底提供光的光源单元。 第一热源单元和光源单元位于主区段中。 光源单元包括由等离子体照明系统（PLS）构成的光源。

公开(公告)号：US20150129033A1

公开(公告)日：2015-05-14

申请号：US14605462

申请日：2015-01-26

申请人： LG ELECTRONICS INC.

发明人： Kyoungsoo LEE ,  Myungjun SHIN ,  Jiweon JEONG

IPC分类号： H01L31/0236 ,  H01L31/0216 ,  H01L31/0224

CPC分类号： H01L31/02366 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/068 ,  Y02E10/547

摘要： A method for manufacturing asolar cell includes texturing a front surface of a semiconductor substrate having a first conductive type dopant by using a dry etching method, forming an emitter layer by ion-implanting a second conductive type dopant into the front surface of the semiconductor substrate, forming a back passivation film on a back surface of the semiconductor substrate; and forming a first electrode electrically connected to the emitter layer and a second electrode being in partial contact with the back surface of the semiconductor substrate.

摘要翻译： 一种用于制造非晶体电池的方法包括通过使用干蚀刻方法对具有第一导电类型掺杂剂的半导体衬底的前表面进行纹理化，通过将第二导电型掺杂剂离子注入到半导体衬底的前表面中形成发射极层， 在所述半导体衬底的背表面上形成反钝化膜; 以及形成与所述发射极层电连接的第一电极和与所述半导体衬底的背面部分接触的第二电极。

公开(公告)号：US20230092881A1

公开(公告)日：2023-03-23

申请号：US17909321

申请日：2020-11-27

申请人： LG ELECTRONICS INC.

发明人： Kyoungsoo LEE ,  Giwon LEE ,  Goohwan SHIM

IPC分类号： H01G9/20 ,  H01L51/42 ,  H01L51/44

摘要： A solar cell according to the present embodiment may have a tandem structure comprising a photovoltaic part, wherein the photovoltaic part comprises: a first photovoltaic part comprising: a photovoltaic layer composed of a perovskite compound; and a second photovoltaic part comprising a semiconductor substrate. Here, in the second photovoltaic part, a first semiconductor layer and a second semiconductor layer, which are formed separately from the semiconductor substrate on one side or the other side of the semiconductor substrate, may have different structures from each other.

公开(公告)号：US20190035655A1

公开(公告)日：2019-01-31

申请号：US16146958

申请日：2018-09-28

申请人： LG ELECTRONICS INC.

发明人： Kyoungsoo LEE ,  Minho CHOI ,  Jinhyung LEE ,  Gyeayoung KWAG ,  Sangwook PARK

IPC分类号： H01L21/67 ,  H01L31/18 ,  H01L21/677 ,  H05B3/00

摘要： A post-processing apparatus of a solar cell that carries out a post-processing operation including a main period for heat-treating a solar cell having a semiconductor substrate while providing light to the solar cell, the post-processing apparatus including a main section to carry out the main period, wherein the main section comprises a first heat source unit to provide heat to the semiconductor substrate and a light source unit to provide light to the semiconductor substrate, the first heat source unit and the light source unit being positioned in the main section, and the light source unit comprises a light source constituted by a plasma lighting system (PLS).

公开(公告)号：US20180212095A1

公开(公告)日：2018-07-26

申请号：US15924976

申请日：2018-03-19

申请人： LG ELECTRONICS INC.

发明人： Kyoungsoo LEE ,  Sangwook PARK

IPC分类号： H01L31/20 ,  H01L31/0376 ,  H01L31/0747 ,  H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/208 ,  H01L31/022425 ,  H01L31/0376 ,  H01L31/03767 ,  H01L31/0747 ,  H01L31/1884 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521

摘要： A method of manufacturing a solar cell includes forming a photoelectric converter including an amorphous semiconductor layer, forming an electrode connected to the photoelectric converter, and performing a post-treatment by providing light to the photoelectric converter and the electrode, wherein, in the performing of the post-treatment, a plasma lighting system (PLS) is used as a light source, and a processing temperature is within a range from about 100° C. to about 300° C.

公开(公告)号：US20150357510A1

公开(公告)日：2015-12-10

申请号：US14733620

申请日：2015-06-08

申请人： LG ELECTRONICS INC.

发明人： Kyoungsoo LEE ,  Minho CHOI ,  Jinhyung LEE ,  Gyeayoung KWAG ,  Sangwook PARK

IPC分类号： H01L31/18

CPC分类号： H01L31/1864 ,  H01L21/3003 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

摘要： A method of manufacturing a solar cell is discussed. The method of manufacturing the solar cell includes: forming a conductive region on a semiconductor substrate; forming an electrode connected to the conductive region; and post-processing the semiconductor substrate to passivate the semiconductor substrate. The post-processing of the semiconductor substrate comprises a main processing process for heat-treating the semiconductor substrate while providing light to the semiconductor substrate. A temperature of the main processing process is about 100° C. to about 800° C., and the temperature and light intensity of the main processing process satisfy Equation of 1750−31.8·T+(0.16)·T2≦I. Here, T is the temperate (° C.) of the main processing process, and I is the light intensity (mW/cm2) of the main processing process.

摘要翻译： 讨论了太阳能电池的制造方法。 太阳能电池的制造方法包括：在半导体基板上形成导电区域; 形成连接到所述导电区域的电极; 并对半导体衬底进行后处理以钝化半导体衬底。 半导体衬底的后处理包括用于在向半导体衬底提供光的同时对半导体衬底进行热处理的主要处理工艺。 主加工工艺的温度为约100℃至约800℃，主加工工艺的温度和光强度满足公式1750-31.8·T +（0.16）·T2＆nlE; I。 这里，T是主处理过程的温度（℃），I是主处理过程的光强度（mW / cm 2）。

公开(公告)号：US20140083498A1

公开(公告)日：2014-03-27

申请号：US14038159

申请日：2013-09-26

申请人： LG Electronics Inc.

发明人： Hyunho LEE ,  Kyoungsoo LEE ,  Changseo PARK

IPC分类号： H01L31/0216

CPC分类号： H01L31/02167 ,  H01L31/022441 ,  H01L31/03682 ,  H01L31/068 ,  Y02E10/546 ,  Y02E10/547

摘要： A solar cell is discussed. The solar cell includes a semiconductor substrate, a p-type conductive region formed at the semiconductor substrate and including a p-type impurity, and a passivation film formed on the p-type conductive region and including aluminum oxide. The passivation film has a thickness of 7 to 17 Å.

摘要翻译： 讨论太阳能电池。 太阳能电池包括半导体衬底，形成在半导体衬底处并包含p型杂质的p型导电区域，以及形成在p型导电区域上并包括氧化铝的钝化膜。 钝化膜的厚度为7至17埃。

公开(公告)号：US20180337292A1

公开(公告)日：2018-11-22

申请号：US15983671

申请日：2018-05-18

申请人： LG Electronics Inc.

发明人： Kyoungsoo LEE ,  Sunghyun HWANG ,  Sangwook PARK

IPC分类号： H01L31/0216 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/20 ,  H01L31/0747

CPC分类号： H01L31/02167 ,  H01L31/02363 ,  H01L31/0747

摘要： A solar cell includes: a semiconductor substrate including an uneven portion, the uneven portion being located on at least one of a front surface or a rear surface of the semiconductor substrate; a passivation layer disposed on the uneven portion; and an oxide layer disposed between the passivation layer and the uneven portion of the semiconductor substrate, the oxide layer including amorphous oxide.

公开(公告)号：US20180204737A1

公开(公告)日：2018-07-19

申请号：US15866052

申请日：2018-01-09

申请人： LG ELECTRONICS INC.

发明人： Kyoungsoo LEE ,  Sunghyun HWANG ,  Sangwook PARK

IPC分类号： H01L21/3205 ,  H01L31/072 ,  H01L21/02 ,  H01L21/28

摘要： A method of manufacturing a solar cell is disclosed. The method of manufacturing the solar cell includes depositing an intrinsic amorphous silicon layer on a surface of a semiconductor substrate, depositing an amorphous silicon layer containing impurities on the intrinsic amorphous silicon layer to form a conductive region, and forming an electrode electrically connected to the conductive region. The depositing of the intrinsic amorphous silicon layer includes depositing the intrinsic amorphous silicon on the surface of the semiconductor substrate at a deposition rate of 0.5 nm/sec to 2.0 nm/sec.